Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Nitric Oxide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Nitric Oxide SCHEMBL37670 | 1.00 | — | — | |
| Nitric Oxide SCHEMBL10533263 | 0.89 | — | — | |
| Nitric Oxide SCHEMBL3993955 | 0.87 | — | — | |
| Nitric Oxide SCHEMBL7560 | 0.87 | — | — | |
| Nitric Oxide SCHEMBL30872093 | 0.82 | — | — | |
| Nitric Oxide SCHEMBL5104249 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL306589 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL6890944 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL2888647 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL3636459 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-109860566-B | Preparation method of modified nickel cobalt lithium manganate positive electrode material | 深圳市汇鑫利电子科技有限公司 | 2022-04-01 | — | — | CN | claimed |
| US-20100283179-A1 | Method of Fabricating Metal Nitrogen Oxide Thin Film Structure | ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH (TW) | 2010-11-11 | — | — | US | claimed |
| US-7317280-B2 | Organic light-emitting devices and their encapsulation method and application of this method | TSINGHUA UNIVERSITY (CN) | 2008-01-08 | — | — | US | claimed |
| US-20040160178-A1 | Organic light-emitting devices and their encapsulation method and application of this method | TSINGHUA UNIVERSITY (CN) | 2004-08-19 | — | — | US | claimed |
| JP-2022454-A | — | — | None | — | — | JP | disclosed |
| US-20260020344-A1 | Array Substrate | BEIJING BOE TECHNOLOGY DEV CO LTD (CN) | 2026-01-15 | — | — | US | disclosed |
| CN-107665947-B | Variable resistance memory device | 三星电子株式会社 | 2022-06-21 | — | — | CN | disclosed |
| CN-109860566-B | Preparation method of modified nickel cobalt lithium manganate positive electrode material | 深圳市汇鑫利电子科技有限公司 | 2022-04-01 | — | — | CN | disclosed |
| US-10831057-B2 | Color filter substrate, display panel and manufacturing method thereof, and display device | BOE TECHNOLOGY GROUP CO., LTD. (CN) | 2020-11-10 | — | — | US | disclosed |
| US-20170336673-A1 | COLOR FILTER SUBSTRATE, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE | HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. (CN) | 2017-11-23 | — | — | US | disclosed |
| CN-205917178-U | Glass plating layer structure , fingerprint detection device and mobile terminal | 乐视移动智能信息技术（北京）有限公司 | 2017-02-01 | — | — | CN | disclosed |
| CN-105884209-A | Glass coating structure, fingerprint detection device and mobile terminal | 乐视移动智能信息技术（北京）有限公司 | 2016-08-24 | — | — | CN | disclosed |
| US-20040160178-A1 | Organic light-emitting devices and their encapsulation method and application of this method | TSINGHUA UNIVERSITY (CN) | 2004-08-19 | — | — | US | disclosed |
| US-5488014-A | Interconnection structure of semiconductor integrated circuit device and manufacturing method thererfor | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 1996-01-30 | — | — | US | disclosed |
| US-5480836-A | SEMICONDUCTORS, ALUMINUM ALLOY LAYERS, CONNECTION HOLES, INTERMEDIATE TITANIUM AND TITANIUM NITRIDE LAYERS | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 1996-01-02 | — | — | US | disclosed |
| US-5420070-A | Manufacturing method of interconnection structure of semiconductor device | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 1995-05-30 | — | — | US | disclosed |
| US-5341026-A | Semiconductor device having a titanium and a titanium compound multilayer interconnection structure | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 1994-08-23 | — | — | US | disclosed |
| US-5313101-A | Aluminum, titanium, and their intermetallic compound layers | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 1994-05-17 | — | — | US | disclosed |
| US-5306952-A | Multilayer aluminum-containing interconnection structure of semiconductor device | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 1994-04-26 | — | — | US | disclosed |
| JP-H0222454-A | PRODUCTION OF CUTTING TOOL MADE OF SURFACE-TREATED TUNGSTEN CARBIDE-BASE SINTERED HARD ALLOY | MITSUBISHI METAL CORP | 1990-01-25 | — | — | JP | disclosed |