SCHEMBL377162

SCHEMBL377162

N=C(OS(=O)(=O)C(F)(F)F)c1ccccc1C(=N)OS(=O)(=O)C(F)(F)F

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 2/20 0.34
CA2 P00918 2/20 0.34
CA9 Q16790 2/20 0.34
CA5A P35218 1/20 0.34
PTPN1 P18031 2/20 0.34
ALDH1A1 P00352 3/20 0.33
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
KDM4E B2RXH2 2/20 0.33
ALOX15 P16050 2/20 0.33
HPGD P15428 2/20 0.33
SMN1; SMN2 Q16637 2/20 0.33
GAA P10253 1/20 0.33
CA12 O43570 1/20 0.33
HMGB1 P09429 1/20 0.33
CA4 P22748 1/20 0.33
CA6 P23280 1/20 0.33
CA7 P43166 1/20 0.33
NAPRT Q6XQN6 1/20 0.33
CA14 Q9ULX7 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL377161 0.92 HPGD (0.34) CA1CA2CA9CA5AALDH1A1
SCHEMBL28564570 0.73 CES2 (0.47) PTPN1ALDH1A1MEN1KMT2AALOX15
SCHEMBL9367082 0.73 NR4A1 (0.51) PTPN1ALDH1A1MEN1KMT2AKDM4E
SCHEMBL777725 0.72 NPC1 (0.45) MEN1KMT2AHPGDCYP1A2MAPT
SCHEMBL1661827 0.72 CES2 (0.41) PTPN1ALDH1A1MEN1KMT2AALOX15
SCHEMBL6638516 0.71 LMNA (0.50) ALDH1A1MEN1KMT2AALOX15SMN1; SMN2
SCHEMBL28190448 0.69 CES1 (0.41) CA1CA2CA9CA5AALDH1A1
SCHEMBL21408400 0.68 ATM (0.41) CES1MAPT
SCHEMBL1648325 0.67 KDM4E (0.49) CA1CA2CA9ALDH1A1MEN1
SCHEMBL1902043 0.67 ELANE (0.46) ALDH1A1MEN1KMT2AKDM4EALOX15

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 215 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6274286-B1 Resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-14 US claimed
US-20240210831-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-27 US disclosed
EP-4386037-A1 SILPHENYLENE-SKELETON-CONTAINING POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-19 EP disclosed
EP-3656803-B1 POLYSILOXANE SKELETON POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND FABRICATION OF OPTO-SEMICONDUCTOR DEVICE SHINETSU CHEMICAL CO (JP) 2024-04-10 EP disclosed
CN-111381447-B Photosensitive resin composition, laminate, and pattern forming method 信越化学工业株式会社 2024-03-08 CN disclosed
EP-4321553-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-14 EP disclosed
EP-3441818-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, LAMINATE, AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2023-12-06 EP disclosed
EP-3640289-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2023-12-06 EP disclosed
EP-4273624-A1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, INTERLAYER INSULATING FILM, SURFACE PROTECTION FILM, AND ELECTRONIC COMPONENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-08 EP disclosed
US-20230350294-A1 Negative Photosensitive Resin Composition, Patterning Process, Interlayer Insulating Film, Surface Protection Film, And Electronic Component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-02 US disclosed
US-20010010890-A1 Polymers, chemical amplification resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-02 US disclosed
US-20010003772-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICDL CO., LTD. OF (JP) 2001-06-14 US disclosed
EP-1099983-A1 Chemically amplified positive resist composition and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2001-05-16 EP disclosed
US-6156481-A WITH HYDROXYSTYRENE-(METH)ACRYLIC ACID OR (METH)ACRYLATE COPOLYMER WHERE SOME PHENOLIC HYDROXYL GROUPS ARE CROSSLINKED WITH ETHER CONTAINING ACID LABILE GROUPS; DISSOLUTION INHIBITION AND INCREASED DISSOLUTION CONTRAST AFTER EXPOSURE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-12-05 US disclosed
US-6136502-A COMPRISING ORGANIC SOLVENT, AT LEAST TWO POLYMERS WITH WEIGHT AVERAGE MOLECULAR WEIGHTS OF 1,000-500,000 WHICH HAVE AT LEAST ONE TYPE OF ACID LABILE GROUP AND ARE CROSSLINKED WITHIN A MOLECULE AND/OR BETWEEN MOLECULES, PHOTOACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-10-24 US disclosed
EP-1039346-A1 Resist compositions and pattering process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-09-27 EP disclosed
US-6117621-A APPLYING A CHEMICALLY AMPLIFIED POSITIVE RESIST OF A POLYMER WITH ACID LABILE GROUPS, A PHOTOACID GENERATOR AND A ORGANIC SOLVENT; RESOLUTION AND FOCAL DEPTH; EXPOSING, BAKING, AND DEVELOPING; CALIBRATION OF EXPOSURES AND DISSOLUTION RATES SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-09-12 US disclosed
EP-0908783-A1 Resist compositions, their preparation and use for patterning processes SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
EP-0908473-A1 Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
EP-0887705-A1 Resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-30 EP disclosed