SCHEMBL377161

SCHEMBL377161

N=C(OS(=O)(=O)C(F)(F)F)c1ccccc1C(=O)OS(=O)(=O)C(F)(F)F

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HPGD P15428 3/20 0.34
ALOX15 P16050 2/20 0.34
HSD17B10 Q99714 2/20 0.34
MAPT P10636 1/20 0.34
TSHR P16473 2/20 0.33
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
GAA P10253 1/20 0.33
ALDH1A1 P00352 6/20 0.33
LMNA P02545 1/20 0.33
KDM4E B2RXH2 2/20 0.32
CA1 P00915 2/20 0.32
CA2 P00918 2/20 0.32
CA9 Q16790 2/20 0.32
CA12 O43570 1/20 0.32
HMGB1 P09429 1/20 0.32
CA4 P22748 1/20 0.32
CA6 P23280 1/20 0.32
CA7 P43166 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL377162 0.92 CA1 (0.34) HPGDALOX15HSD17B10MAPTTSHR
SCHEMBL28564570 0.80 CES2 (0.47) HPGDALOX15MAPTMEN1KMT2A
SCHEMBL9367082 0.79 NR4A1 (0.51) HPGDMAPTMEN1KMT2AGAA
SCHEMBL777725 0.79 NPC1 (0.45) HPGDMAPTMEN1KMT2ALMNA
SCHEMBL6638516 0.75 LMNA (0.50) ALOX15HSD17B10MAPTTSHRMEN1
SCHEMBL28006418 0.73 ALOX15 (0.42) HPGDALOX15HSD17B10TSHRMEN1
SCHEMBL21408400 0.73 ATM (0.41) MAPTLMNASDHBTDP1CES1
SCHEMBL28421364 0.71 IRAK4 (0.37) HPGDHSD17B10MAPTTSHRMEN1
SCHEMBL28573797 0.70 PDCD1 (0.49) MAPTKDM4ECA1CA2CA9
SCHEMBL28365571 0.70 MAPT (0.37) HPGDMAPTTSHRMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 232 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6274286-B1 Resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-14 US claimed
WO-1993009474-A1 PHOTOELECTROGRAPHIC ELEMENTS UTILIZING NONIONIC SULFONIC ACID PHOTOGENERATORS EASTMAN KODAK COMPANY (US) 1993-05-13 WO claimed
US-5204198-A Consistent performance at variable relative humidities EASTMAN KODAK COMPANY (US) 1993-04-20 US claimed
US-12393115-B2 Positive working photosensitive material MERCK PATENT GMBH (DE) 2025-08-19 US disclosed
CN-119179233-A Photosensitive composition, method for producing pattern, cured product, and electronic component 江苏艾森半导体材料股份有限公司 2024-12-24 CN disclosed
US-20240210831-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-27 US disclosed
EP-4386037-A1 SILPHENYLENE-SKELETON-CONTAINING POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-19 EP disclosed
EP-3656803-B1 POLYSILOXANE SKELETON POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND FABRICATION OF OPTO-SEMICONDUCTOR DEVICE SHINETSU CHEMICAL CO (JP) 2024-04-10 EP disclosed
CN-111381447-B Photosensitive resin composition, laminate, and pattern forming method 信越化学工业株式会社 2024-03-08 CN disclosed
EP-4321553-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-14 EP disclosed
EP-3441818-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, LAMINATE, AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2023-12-06 EP disclosed
US-6156481-A WITH HYDROXYSTYRENE-(METH)ACRYLIC ACID OR (METH)ACRYLATE COPOLYMER WHERE SOME PHENOLIC HYDROXYL GROUPS ARE CROSSLINKED WITH ETHER CONTAINING ACID LABILE GROUPS; DISSOLUTION INHIBITION AND INCREASED DISSOLUTION CONTRAST AFTER EXPOSURE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-12-05 US disclosed
US-6136502-A COMPRISING ORGANIC SOLVENT, AT LEAST TWO POLYMERS WITH WEIGHT AVERAGE MOLECULAR WEIGHTS OF 1,000-500,000 WHICH HAVE AT LEAST ONE TYPE OF ACID LABILE GROUP AND ARE CROSSLINKED WITHIN A MOLECULE AND/OR BETWEEN MOLECULES, PHOTOACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-10-24 US disclosed
EP-1039346-A1 Resist compositions and pattering process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-09-27 EP disclosed
US-6117621-A APPLYING A CHEMICALLY AMPLIFIED POSITIVE RESIST OF A POLYMER WITH ACID LABILE GROUPS, A PHOTOACID GENERATOR AND A ORGANIC SOLVENT; RESOLUTION AND FOCAL DEPTH; EXPOSING, BAKING, AND DEVELOPING; CALIBRATION OF EXPOSURES AND DISSOLUTION RATES SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-09-12 US disclosed
EP-0908783-A1 Resist compositions, their preparation and use for patterning processes SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
EP-0908473-A1 Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
EP-0887705-A1 Resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-30 EP disclosed
WO-1993009474-A1 PHOTOELECTROGRAPHIC ELEMENTS UTILIZING NONIONIC SULFONIC ACID PHOTOGENERATORS EASTMAN KODAK COMPANY (US) 1993-05-13 WO disclosed
US-5204198-A Consistent performance at variable relative humidities EASTMAN KODAK COMPANY (US) 1993-04-20 US disclosed