SCHEMBL382926

SCHEMBL382926

COCCCCC1CCCC1

nearest known ligand 0.50

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.50
SIGMAR1 Q99720 3/20 0.47
EPHX1 P07099 1/20 0.44
NAAA Q02083 11/20 0.43
FKBP1A P62942 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13313166 0.98 CYP1A2 (0.54) CYP1A2SIGMAR1EPHX1NAAAFKBP1A
SCHEMBL30203249 0.98 SIGMAR1 (0.50) CYP1A2SIGMAR1EPHX1NAAAFKBP1A
SCHEMBL18414169 0.98 SIGMAR1 (0.50) CYP1A2SIGMAR1EPHX1NAAAFKBP1A
SCHEMBL13313184 0.96 SIGMAR1 (0.54) CYP1A2SIGMAR1EPHX1NAAAFKBP1A
SCHEMBL27625119 0.96 SIGMAR1 (0.54) CYP1A2SIGMAR1EPHX1NAAAFKBP1A
SCHEMBL6076883 0.93 CYP1A2 (0.52) CYP1A2SIGMAR1EPHX1NAAAFKBP1A
SCHEMBL11157147 0.91 CYP1A2 (0.56) CYP1A2SIGMAR1EPHX1NAAAFKBP1A
SCHEMBL12745051 0.90
Ammonia Solution, Strong SCHEMBL7862370 0.88 CYP1A2 (0.54) CYP1A2SIGMAR1EPHX1NAAAFKBP1A
SCHEMBL23471287 0.88 SIGMAR1 (0.39) CYP1A2SIGMAR1EPHX1NAAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 376 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11693314-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-04 US claimed
US-11340527-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-05-24 US claimed
US-20240210830-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-27 US disclosed
US-20240184200-A1 AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-06 US disclosed
CN-118112887-A Resist composition and pattern forming method 信越化学工业株式会社 2024-05-31 CN disclosed
CN-118005520-A Amine compound, chemically amplified resist composition, and pattern forming method 信越化学工业株式会社 2024-05-10 CN disclosed
US-11953827-B2 Molecular resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-04-09 US disclosed
US-20230280651-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-07 US disclosed
CN-111123651-B Composition for forming substrate protective film and pattern forming method 信越化学工业株式会社 2023-08-22 CN disclosed
CN-111793054-B Sulfonium compound, chemically amplified resist composition, and pattern forming method 信越化学工业株式会社 2023-07-07 CN disclosed
US-11693314-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-04 US disclosed
US-20030091929-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-15 US disclosed
US-20030087181-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-08 US disclosed
US-20030087183-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-08 US disclosed
US-20030054289-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-03-20 US disclosed
US-20030054290-A1 Polymer, resist material and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-03-20 US disclosed
US-20030050398-A1 Novel epoxy compounds having an alicyclic structure, polymer compounds, resist materials, and patterning methods SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-03-13 US disclosed
US-20030036603-A1 Novel epoxy compound having alicyclic structure, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-02-20 US disclosed
US-20020061463-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-23 US disclosed
EP-1195390-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-10 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11340527-B2 Resist composition and patterning process EIF2B1, EIF2B5, WDR1 CYP1A2 2800/4885SIGMAR1 1017/4885EPHX1 357/4885
US-20240184200-A1 AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS ADAR, HNRNPU, POLQ CYP1A2 4030/4885SIGMAR1 497/4885EPHX1 2910/4885
US-20230280651-A1 RESIST COMPOSITION AND PATTERNING PROCESS EIF2B1, EIF2B5, EIF2B3 CYP1A2 2704/4885SIGMAR1 987/4885EPHX1 375/4885
US-11693314-B2 Resist composition and patterning process EIF2B1, EIF2B5, EIF2B3 CYP1A2 2704/4885SIGMAR1 987/4885EPHX1 375/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.