Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 1/20 | 0.48 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.48 |
| ▸ | GABRP | O00591 | 1/20 | 0.33 |
| ▸ | GABRD | O14764 | 1/20 | 0.33 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.33 |
| ▸ | GABRB1 | P18505 | 1/20 | 0.33 |
| ▸ | GABRG2 | P18507 | 1/20 | 0.33 |
| ▸ | GABRB3 | P28472 | 1/20 | 0.33 |
| ▸ | GABRA5 | P31644 | 1/20 | 0.33 |
| ▸ | GABRA3 | P34903 | 1/20 | 0.33 |
| ▸ | GABRA2 | P47869 | 1/20 | 0.33 |
| ▸ | GABRB2 | P47870 | 1/20 | 0.33 |
| ▸ | GABRA4 | P48169 | 1/20 | 0.33 |
| ▸ | GABRE | P78334 | 1/20 | 0.33 |
| ▸ | GABRA6 | Q16445 | 1/20 | 0.33 |
| ▸ | GABRG1 | Q8N1C3 | 1/20 | 0.33 |
| ▸ | GABRG3 | Q99928 | 1/20 | 0.33 |
| ▸ | GABRQ | Q9UN88 | 1/20 | 0.33 |
| ▸ | CA1 | P00915 | 1/20 | 0.30 |
| ▸ | CA9 | Q16790 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2951958 | 0.81 | GABRP (0.42) | LMNACYP2C9GABRPGABRDGABRA1 | |
| SCHEMBL13481222 | 0.79 | LMNA (0.53) | LMNACYP2C9GABRPGABRDGABRA1 | |
| SCHEMBL13380611 | 0.77 | LMNA (0.57) | LMNACYP2C9GABRPGABRDGABRA1 | |
| SCHEMBL383662 | 0.74 | LMNA (0.48) | LMNACYP2C9CA1CA9 | |
| SCHEMBL13899248 | 0.73 | LMNA (0.52) | LMNACYP2C9 | |
| SCHEMBL6552985 | 0.73 | LMNA (0.52) | LMNACYP2C9 | |
| SCHEMBL11988737 | 0.69 | LMNA (0.47) | LMNACYP2C9GABRPGABRDGABRA1 | |
| SCHEMBL13893245 | 0.69 | LMNA (0.47) | LMNACYP2C9 | |
| SCHEMBL13817661 | 0.69 | LMNA (0.47) | LMNACYP2C9 | |
| SCHEMBL438928 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 208 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1096317-B1 | Resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2010-09-08 | — | — | EP | claimed |
| EP-1150166-B1 | Polymers, resist compositions and patterning process | SHINETSU CHEMICAL CO (JP) | 2007-12-19 | — | — | EP | claimed |
| US-6667145-B1 | Resist composition comprising as a base resin a polymer having highly adherent, highly rigid units and especially suited as micropatterning material for VLSI fabrication, and (2) a patterning process using the resist | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-12-23 | — | — | US | claimed |
| US-6596463-B2 | Photosensitivity, resolution, chemical resistance | SHIN-ETSU CHEMICAL, CO., LTD. (JP) | 2003-07-22 | — | — | US | claimed |
| US-6566038-B2 | Micropatterning using electron beams or ultraviolet rays | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-05-20 | — | — | US | claimed |
| US-6312867-B1 | Ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-11-06 | — | — | US | claimed |
| EP-2482132-B1 | Resist pattern forming process | SHINETSU CHEMICAL CO (JP) | 2019-10-16 | — | — | EP | disclosed |
| EP-1276012-B1 | Resist patterning process | SHINETSU CHEMICAL CO (JP) | 2016-03-23 | — | — | EP | disclosed |
| US-9057949-B2 | Patterning process, resist composition, polymer, and polymerizable ester compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-16 | — | — | US | disclosed |
| US-8968979-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-03 | — | — | US | disclosed |
| EP-2081084-B1 | Positive resist compositions and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-12-24 | — | — | EP | disclosed |
| EP-1403295-B1 | Ester compounds, polymers, resist compositions and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-10-22 | — | — | EP | disclosed |
| US-8795942-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| EP-1096318-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1096317-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1085377-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-03-21 | — | — | EP | disclosed |
| EP-1053985-A1 | Resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2000-11-22 | — | — | EP | disclosed |
| US-6147249-A | ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-11-14 | — | — | US | disclosed |
| EP-1031879-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-08-30 | — | — | EP | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |