Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GPR35 | Q9HC97 | 2/20 | 0.52 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.48 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.47 |
| ▸ | MEN1 | O00255 | 1/20 | 0.47 |
| ▸ | S100A4 | P26447 | 2/20 | 0.46 |
| ▸ | CA1 | P00915 | 1/20 | 0.44 |
| ▸ | CA2 | P00918 | 1/20 | 0.44 |
| ▸ | MMP1 | P03956 | 1/20 | 0.44 |
| ▸ | MMP2 | P08253 | 1/20 | 0.44 |
| ▸ | MMP9 | P14780 | 1/20 | 0.44 |
| ▸ | MMP8 | P22894 | 1/20 | 0.44 |
| ▸ | MMP13 | P45452 | 1/20 | 0.44 |
| ▸ | POLB | P06746 | 1/20 | 0.44 |
| ▸ | ACP1 | P24666 | 1/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.42 |
| ▸ | TSHR | P16473 | 3/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.42 |
| ▸ | PTPRC | P08575 | 1/20 | 0.42 |
| ▸ | ERN1 | O75460 | 1/20 | 0.42 |
| ▸ | F2 | P00734 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7783117 | 0.83 | GPR35 (0.47) | GPR35TDP1KMT2AMEN1S100A4 | |
| SCHEMBL29856630 | 0.81 | GPR35 (0.49) | GPR35TDP1KMT2AMEN1CA1 | |
| SCHEMBL64725 | 0.81 | ALDH1A1 (0.56) | GPR35TDP1KMT2AMEN1CA1 | |
| Hydrochloric Acid SCHEMBL27512791 | 0.79 | ALDH1A1 (0.55) | GPR35TDP1KMT2AMEN1CA1 | |
| SCHEMBL28669190 | 0.79 | TDP1 (0.52) | GPR35TDP1KMT2AMEN1S100A4 | |
| SCHEMBL2474011 | 0.79 | TDP1 (0.53) | TDP1CA1CA2MMP1MMP2 | |
| SCHEMBL8432870 | 0.78 | GPR35 (0.53) | GPR35TDP1KMT2AMEN1S100A4 | |
| SCHEMBL14991413 | 0.78 | KMT2A (0.50) | GPR35TDP1KMT2AMEN1S100A4 | |
| SCHEMBL14991414 | 0.78 | KMT2A (0.50) | GPR35TDP1KMT2AMEN1S100A4 | |
| SCHEMBL514833 | 0.77 | GPR35 (0.58) | GPR35TDP1KMT2AMEN1S100A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 454 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4607277-A1 | CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR IMPROVING PATTERN PROFILE AND ENHANCING ADHESION | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | claimed |
| US-20250199406-A1 | CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR IMPROVING PATTERN PROFILE AND ENHANCING ADHESION | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | claimed |
| CN-117608167-A | Photoresist composition and method for producing photoresist pattern | 南开大学 | 2024-02-27 | — | — | CN | claimed |
| US-11906900-B2 | Chemically amplified positive photoresist composition for improving pattern profile | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2024-02-20 | — | — | US | claimed |
| CN-109429511-B | Positive photoresist composition, photoresist pattern using the same, and method for manufacturing photoresist pattern | 株式会社LG化学 | 2022-01-28 | — | — | CN | claimed |
| US-20210216013-A1 | CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR IMPROVING PATTERN PROFILE | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2021-07-15 | — | — | US | claimed |
| US-20190146338-A1 | POSITIVE PHOTORESIST COMPOSITION, PHOTORESIST PATTERN USING THE SAME, AND MANUFACTURING METHOD OF THE PHOTORESIST PATTERN | LG CHEM, LTD. (KR) | 2019-05-16 | — | — | US | claimed |
| WO-2015135864-A1 | PHOTOSENSITIVE POLYMER RESIN, PHOTOSENSITIVE RESIN COMPOSITION COMPRISING THE SAME, AND LAYER MADE THEREFROM | SOLVAY SA (BE) | 2015-09-17 | — | — | WO | claimed |
| EP-2918616-A1 | Photosensitive polymer resin, photosensitive resin composition comprising the same, and layer made therefrom | Solvay SA (BE) | 2015-09-16 | — | — | EP | claimed |
| US-9023980-B2 | Organic passivation layer composition, transistor and/or electronic device including organic passivation layer fabricated therefrom | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-05-05 | — | — | US | claimed |
| US-6964839-B1 | Photosensitive polymer having cyclic backbone and resist composition containing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-11-15 | — | — | US | claimed |
| US-6893793-B2 | Photosensitive polymer and chemically amplified photoresist composition containing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-05-17 | — | — | US | claimed |
| EP-0921439-B1 | Photosensitive polymer and chemically amplified resist composition using the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2004-03-03 | — | — | EP | claimed |
| US-20030170563-A1 | Photosensitive polymer and chemically amplified photoresist composition containing the same | JUNG DONG-WON (KR) | 2003-09-11 | — | — | US | claimed |
| US-20020193542-A1 | Photosensitive polymer and chemically amplified photoresist composition containing the same | JUNG DONG-WON (KR) | 2002-12-19 | — | — | US | claimed |
| US-6472120-B1 | IMPROVED ETCHING RESISTANCE ADHESION, WETTABILITY; FIRST MONOMER IS NORBORNENE ESTER, AND A SECOND MONOMER IS MALEIC ANHYDRIDE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-10-29 | — | — | US | claimed |
| US-6143466-A | Chemically amplified photoresist composition | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2000-11-07 | — | — | US | claimed |
| US-5691396-A | POLYHYDROXYBENZYLSILSESQUIOXANE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-11-25 | — | — | US | claimed |
| US-5164278-A | Aromatic hydroxy compound | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1992-11-17 | — | — | US | claimed |
| EP-0445058-A1 | Speed enhancers for acid sensitized resists | International Business Machines Corporation (US) | 1991-09-04 | — | — | EP | claimed |