SCHEMBL383992

SCHEMBL383992

CC(C)c1cc(C(C)C)c(S(=O)(=O)OS(c2ccccc2)(c2ccccc2)c2ccccc2)c(C(C)C)c1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FABP4 P15090 4/20 0.47
FABP3 P05413 2/20 0.47
FABP5 Q01469 1/20 0.47
ENPP3 O14638 2/20 0.43
ENPP1 P22413 2/20 0.43
PSEN1 P49768 1/20 0.38
PSEN2 P49810 1/20 0.38
APH1B Q8WW43 1/20 0.38
NCSTN Q92542 1/20 0.38
APH1A Q96BI3 1/20 0.38
PSENEN Q9NZ42 1/20 0.38
TDP1 Q9NUW8 1/20 0.37
NR3C1 P04150 1/20 0.37
GAA P10253 2/20 0.36
PIK3CD O00329 1/20 0.36
PIK3CA P42336 1/20 0.36
PIK3CB P42338 1/20 0.36
PIK3CG P48736 1/20 0.36
ALDH1A1 P00352 2/20 0.36
HTT P42858 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5549809 0.93 FABP3 (0.42) FABP4FABP3FABP5ENPP3ENPP1
SCHEMBL2691695 0.90 FABP3 (0.39) FABP4FABP3FABP5ENPP3ENPP1
SCHEMBL2634748 0.88 FABP3 (0.40) FABP4FABP3FABP5ENPP3ENPP1
SCHEMBL5549720 0.88 ENPP3 (0.41) FABP4FABP3FABP5ENPP3ENPP1
SCHEMBL17627839 0.87 ENPP3 (0.52) FABP4FABP3FABP5ENPP3ENPP1
SCHEMBL5549116 0.87 FABP4 (0.46) FABP4FABP3FABP5ENPP3ENPP1
SCHEMBL2634463 0.83 FABP4 (0.43) FABP4FABP3FABP5ENPP3ENPP1
SCHEMBL2946584 0.82 FABP4 (0.62) FABP4FABP3FABP5ENPP3ENPP1
SCHEMBL3785669 0.81 PSEN1 (0.37) FABP4FABP3FABP5ENPP3ENPP1
SCHEMBL17627840 0.80 ENPP1 (0.46) ENPP3ENPP1PSEN1PSEN2APH1B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 265 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6953651-B2 Chemical amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2005-10-11 US claimed
US-20020164548-A1 Wet etch compatible deep UV photoresist compositions ARCH SPECIALTY CHEMICALS, INC. 2002-11-07 US claimed
WO-2002069042-A1 WET ETCH COMPATIBLE DEEP UV PHOTORESIST COMPOSITIONS ARCH SPECIALTY CHEMICALS, INC. (US) 2002-09-06 WO claimed
US-6200480-B1 CONTACTING IMPURE SOLUTION OF PHOTOACID GENERATING COMPOUND CONTAINING TRACE AMOUNTS OF ACIDIC IMPURITIES WITH ANIONIC ION EXCHANGE RESIN CONTAINING PENDENT POLYAMINE FUNCTIONAL GROUPS FOR SUFFICIENT AMOUNT OF TIME TO REMOVE SAID IMPURITIES ARCH SPECIALTY CHEMICALS, INC. 2001-03-13 US claimed
EP-1054715-A1 METHOD OF PURIFYING PHOTOACID GENERATORS FOR USE IN PHOTORESIST COMPOSITIONS Olin Microelectronic Chemicals, Inc. (US) 2000-11-29 EP claimed
WO-1999036151-A1 METHOD OF PURIFYING PHOTOACID GENERATORS FOR USE IN PHOTORESIST COMPOSITIONS OLIN MICROELECTRONIC CHEMICALS, INC. (US) 1999-07-22 WO claimed
EP-2256552-B1 Negative resist composition and patterning process using the same SHINETSU CHEMICAL CO (JP) 2017-07-12 EP disclosed
EP-2413192-B1 POLYMERIZABLE MONOMERS SHINETSU CHEMICAL CO (JP) 2016-12-21 EP disclosed
US-9411225-B2 Photo acid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-09 US disclosed
EP-2345934-B1 Negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2016-03-23 EP disclosed
US-20160004155-A1 PHOTO ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-07 US disclosed
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2244126-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-1225479-A2 Chemical amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-07-24 EP disclosed
US-6346363-B2 CONTAINING POLYSILOXANE FUJI PHOTO FILM CO., LTD. (JP) 2002-02-12 US disclosed
US-20010038967-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-08 US disclosed
EP-1152295-A1 Tertiary-butyl acrylate polymers and their use in photoresist compositions Arch Specialty Chemicals, Inc. (US) 2001-11-07 EP disclosed
US-6200480-B1 CONTACTING IMPURE SOLUTION OF PHOTOACID GENERATING COMPOUND CONTAINING TRACE AMOUNTS OF ACIDIC IMPURITIES WITH ANIONIC ION EXCHANGE RESIN CONTAINING PENDENT POLYAMINE FUNCTIONAL GROUPS FOR SUFFICIENT AMOUNT OF TIME TO REMOVE SAID IMPURITIES ARCH SPECIALTY CHEMICALS, INC. 2001-03-13 US disclosed
EP-1054715-A1 METHOD OF PURIFYING PHOTOACID GENERATORS FOR USE IN PHOTORESIST COMPOSITIONS Olin Microelectronic Chemicals, Inc. (US) 2000-11-29 EP disclosed
WO-1999036151-A1 METHOD OF PURIFYING PHOTOACID GENERATORS FOR USE IN PHOTORESIST COMPOSITIONS OLIN MICROELECTRONIC CHEMICALS, INC. (US) 1999-07-22 WO disclosed