SCHEMBL384730

SCHEMBL384730

CC(C)(S(=O)(=O)c1ccc2ccccc2c1)S(=O)(=O)c1ccc2ccccc2c1

nearest known ligand 0.61

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 1/20 0.61
LMNA P02545 3/20 0.57
ALDH1A1 P00352 2/20 0.49
GAA P10253 1/20 0.49
SMN1; SMN2 Q16637 1/20 0.49
ATM Q13315 1/20 0.47
F2 P00734 2/20 0.47
PRSS1 P07477 2/20 0.47
PRSS2 P07478 2/20 0.47
PRSS3 P35030 2/20 0.47
PKM P14618 2/20 0.46
MCOLN3 Q8TDD5 3/20 0.46
TSHR P16473 2/20 0.46
CA1 P00915 1/20 0.46
CA2 P00918 1/20 0.46
CA9 Q16790 1/20 0.46
PKLR P30613 1/20 0.45
NPC1 O15118 1/20 0.45
RAB9A P51151 1/20 0.45
MEN1 O00255 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29515858 1.00 L3MBTL1 (0.61) L3MBTL1LMNAALDH1A1GAASMN1; SMN2
SCHEMBL3436103 0.88 LMNA (0.57) L3MBTL1LMNAALDH1A1GAASMN1; SMN2
SCHEMBL751596 0.85 LMNA (0.53) L3MBTL1LMNAALDH1A1GAASMN1; SMN2
SCHEMBL2739643 0.82 LMNA (0.59) L3MBTL1LMNAALDH1A1GAASMN1; SMN2
SCHEMBL1464736 0.80 LMNA (0.49) L3MBTL1LMNAALDH1A1GAASMN1; SMN2
SCHEMBL23520947 0.80 LMNA (0.57) L3MBTL1LMNAALDH1A1SMN1; SMN2ATM
SCHEMBL758323 0.77 ATM (0.66) L3MBTL1LMNAGAAATMF2
SCHEMBL1952494 0.76 LMNA (0.68) L3MBTL1LMNASMN1; SMN2ATMF2
SCHEMBL3681833 0.76 L3MBTL1 (1.00) L3MBTL1LMNAALDH1A1GAASMN1; SMN2
SCHEMBL29859681 0.76 L3MBTL1 (1.00) L3MBTL1LMNAALDH1A1GAASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 370 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12493244-B2 Photosensitive resin composition, photosensitive dry film, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-09 US disclosed
EP-4050054-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHINETSU CHEMICAL CO (JP) 2025-04-23 EP disclosed
WO-2025058368-A1 PHOTOSENSITIVE RESIN COMPOSITION, INSULATION FILM, AND SEMICONDUCTOR DEVICE 주식회사 엘지화학 2025-03-20 WO disclosed
US-20250044695-A1 METHOD FOR USING COMPOSITION COMPRISING ORGANIC ACID COMPOUND, LITHOGRAPHY COMPOSITION COMPRISING ORGANIC ACID COMPOUND, AND METHOD FOR MANUFACTURING RESIST PATTERN MERCK PATENT GMBH (DE) 2025-02-06 US disclosed
US-12197127-B2 Negative photosensitive resin composition, patterning process, method for forming cured film, interlayer insulation film, surface protective film, and electronic component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-01-14 US disclosed
WO-2024214539-A1 COMPOSITION FOR FORMING WAVELENGTH CONVERSION FILM, AND COMPOUND 日産化学株式会社 2024-10-17 WO disclosed
WO-2024122572-A1 WAVELENGTH CONVERSION FILM-FORMING COMPOSITION AND FUSED THIOPHENE COMPOUND 日産化学株式会社 2024-06-13 WO disclosed
EP-4348352-A1 METHOD FOR USING COMPOSITION COMPRISING ORGANIC ACID COMPOUND, LITHOGRAPHY COMPOSITION COMPRISING ORGANIC ACID COMPOUND, AND METHOD FOR MANUFACTURING RESIST PATTERN Merck Patent GmbH (DE) 2024-04-10 EP disclosed
WO-2024029475-A1 WAVELENGTH CONVERSION FILM FORMING COMPOSITION 日産化学株式会社 2024-02-08 WO disclosed
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 US disclosed
US-20020039701-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-04 US disclosed
US-6338931-B1 PHOTOACID GENERATOR OF SULFONYLDIAZOMETHANE COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-01-15 US disclosed
US-20010038971-A1 Chemical amplification, positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-11-08 US disclosed
US-20010036593-A1 Chemical amplification type resist composition SHIN-ETSU CHEMICAL CO., LTD. 2001-11-01 US disclosed
US-20010035394-A1 Chemically amplified positive resist composition and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-11-01 US disclosed
US-20010033994-A1 Chemical amplification, positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-25 US disclosed
US-20010031421-A1 Chemical amplification resist compositions SHIN-ETSU CHEMICAL CO., LTD. OF (JP) 2001-10-18 US disclosed
EP-1136885-A1 Chemically amplified positive resist composition and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-09-26 EP disclosed
EP-1117003-A1 Chemical amplification type resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2001-07-18 EP disclosed
EP-1077391-A1 Onium salts, photoacid generators for resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-02-21 EP disclosed