SCHEMBL3856231

SCHEMBL3856231

C=C(C)C(=O)OC12CC3CC(CC(C3)C1(C)OC(=O)C(=C)C)C2

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
GLA P06280 1/20 0.32
SCN1A P35498 1/20 0.31
SCN2A Q99250 1/20 0.31
SCN3A Q9NY46 1/20 0.31
ALDH1A1 P00352 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3182594 0.86 GLA (0.33) GLASCN1ASCN2ASCN3AALDH1A1
SCHEMBL3182587 0.86 SCN1A (0.32) SCN1ASCN2ASCN3AALDH1A1
SCHEMBL677901 0.84 GLA (0.32) GLASCN1ASCN2ASCN3AALDH1A1
SCHEMBL364323 0.83 ALDH1A1 (0.31) ALDH1A1
SCHEMBL28766399 0.81 LMNA (0.33) ALDH1A1
SCHEMBL8105683 0.80 SCN1A (0.34) GLASCN1ASCN2ASCN3AALDH1A1
SCHEMBL15205966 0.79 TSHR (0.31) ALDH1A1
SCHEMBL18823007 0.78 ALDH1A1 (0.31) ALDH1A1
SCHEMBL15205287 0.78 EPHX2 (0.31) ALDH1A1
SCHEMBL15206147 0.77

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20190155162-A1 PATTERN-FORMING METHOD AND COMPOSITION FOR RESIST PATTERN-REFINEMENT JSR CORPORATION (JP) 2019-05-23 US disclosed
US-20160291462-A1 PATTERN-FORMING METHOD AND COMPOSITION FOR RESIST PATTERN-REFINEMENT JSR CORPORATION (JP) 2016-10-06 US disclosed
US-9170488-B2 Resist pattern-forming method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2015-10-27 US disclosed
US-9164387-B2 Pattern-forming method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2015-10-20 US disclosed
US-9122163-B2 2015-09-01 US disclosed
US-20140295350-A1 RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORP (JP) 2014-10-02 US disclosed
US-8815493-B2 Resist pattern-forming method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2014-08-26 US disclosed
US-8795954-B2 Resist pattern-forming method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2014-08-05 US disclosed
US-20130230803-A1 RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2013-09-05 US disclosed
US-20130224661-A1 PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2013-08-29 US disclosed
US-20130224666-A1 RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2013-08-29 US disclosed
US-7592125-B2 Chemically-amplified positive photoresist compositions that contain a photoactive component and blend of at least two distinct resins; a first resin that comprises hydroxy naphthyl groups and a second cross-linked resin; reduced line edge roughness ROHM AND HAAS ELECTRIC MATERIALS LLC (US) 2009-09-22 US disclosed
EP-1684120-A1 Photresist compositions comprising resin blends Rohm and Haas Electronic Materials LLC (US) 2006-07-26 EP disclosed
US-20060160022-A1 Chemically-amplified positive photoresist compositions that contain a photoactive component and blend of at least two distinct resins; a first resin that comprises carbocyclic aryl units with hetero substitution and a second cross-linked resin ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2006-07-20 US disclosed