SCHEMBL3860686

SCHEMBL3860686

OC1(Br)CC=Cc2cc(Br)ccc21

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
CA4 P22748 1/20 0.31
CA7 P43166 1/20 0.31
CA9 Q16790 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8026331 0.78 HIF1A (0.33)
SCHEMBL7857422 0.76 HTR2C (0.30)
SCHEMBL31186268 0.76 KDM4E (0.34)
SCHEMBL7978352 0.72
SCHEMBL8772649 0.69 KDM1A (0.31)
SCHEMBL9485242 0.68 KDM1A (0.30)
SCHEMBL8031290 0.66 TDP2 (0.36)
SCHEMBL2965930 0.65 TRPA1 (0.37) CA1CA2CA9
SCHEMBL11845217 0.63 CA1 (0.37) CA1CA2CA4CA7CA9
SCHEMBL6544873 0.63 ADAMTS4 (0.31) CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0934240-B1 PRODUCTION OF 6-BROMO-2-NAPHTHOL AND DERIVATIVES ALBEMARLE CORP (US) 2001-01-10 EP claimed
EP-4668315-A1 COMPOSITION FOR FORMING PROTECTIVE FILM FOR SEMICONDUCTOR CHIP MANUFACTURE, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR CHIP, AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP Nissan Chemical Corporation (JP) 2025-12-24 EP disclosed
US-20250361419-A1 COMPOSITION FOR FORMING COATING FILM FOR REMOVING FOREIGN MATTERS AND SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2025-11-27 US disclosed
EP-4629280-A1 COMPOSITION FOR FORMING COATING FILM FOR FOREIGN SUBSTANCE REMOVAL, AND SEMICONDUCTOR SUBSTRATE Nissan Chemical Corporation (JP) 2025-10-08 EP disclosed
CN-119404289-A Composition for forming coating film for removing foreign matter and semiconductor substrate 日产化学株式会社 2025-02-07 CN disclosed
WO-2024172010-A1 COMPOSITION FOR FORMING PROTECTIVE FILM FOR SEMICONDUCTOR CHIP MANUFACTURE, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR CHIP, AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP 日産化学株式会社 2024-08-22 WO disclosed
WO-2024117235-A1 COMPOSITION FOR FORMING COATING FILM FOR FOREIGN SUBSTANCE REMOVAL, AND SEMICONDUCTOR SUBSTRATE 日産化学株式会社 2024-06-06 WO disclosed
WO-2023248946-A1 COMPOSITION FOR FORMING COATING FILM FOR FOREIGN SUBSTANCE REMOVAL, AND SEMICONDUCTOR SUBSTRATE 日産化学株式会社 2023-12-28 WO disclosed
CN-110366768-B Composition for forming coating film for removing foreign matter 日产化学株式会社 2023-09-26 CN disclosed
US-20230250314-A1 COMPOSITION FOR FORMING A COATING FILM FOR REMOVING FOREIGN MATTERS NISSAN CHEMICAL CORPORATION (JP) 2023-08-10 US disclosed
US-8916327-B2 Underlayer coating forming composition containing dextrin ester compound NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-12-23 US disclosed
EP-1666972-B1 USE OF A COMPOSITION CONTAINING POLYAMIC ACID FOR FORMING AN ANTI-REFLECTIVE COATING NISSAN CHEMICAL IND LTD (JP) 2013-03-27 EP disclosed
US-7598182-B2 having monomers of pyromellitic acid, 3,5-diaminobenzoic acid; use in a lithography for forming photoresist pattern NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-10-06 US disclosed
EP-1681594-B1 COMPOSITION FOR FORMING UNDERLYING FILM CONTAINING DEXTRIN ESTER COMPOUND NISSAN CHEMICAL IND LTD (JP) 2009-05-13 EP disclosed
US-20070135581-A1 Underlayer coating forming composition containing dextrin ester compound NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-06-14 US disclosed
US-20070004228-A1 Polyamide acid-containing composition for forming antireflective film NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-01-04 US disclosed
EP-1681594-A1 COMPOSITION FOR FORMING UNDERLYING FILM CONTAINING DEXTRIN ESTER COMPOUND Nissan Chemical Industries, Ltd. (JP) 2006-07-19 EP disclosed
EP-1666972-A1 POLYAMIDE ACID-CONTAINING COMPOSITION FOR FORMING ANTIREFLECTIVE FILM Nissan Chemical Industries, Ltd. (JP) 2006-06-07 EP disclosed
US-4374262-A Preparation of hydroxy aromatic carboxylic acids and ester derivatives thereof CELANESE CORPORATION (US) 1983-02-15 US disclosed
EP-0049616-A1 Preparation of hydroxy aromatic carboxylic acids and ester derivatives thereof CELANESE CORPORATION (US) 1982-04-14 EP disclosed