Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 1/20 | 0.48 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.37 |
| ▸ | EPHX2 | P34913 | 4/20 | 0.35 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.32 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.32 |
| ▸ | DPP4 | P27487 | 2/20 | 0.31 |
| ▸ | FAP | Q12884 | 1/20 | 0.31 |
| ▸ | DPP7 | Q9UHL4 | 1/20 | 0.31 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.30 |
| ▸ | TSHR | P16473 | 1/20 | 0.30 |
| ▸ | SLC1A2 | P43004 | 1/20 | 0.30 |
| ▸ | MEN1 | O00255 | 1/20 | 0.30 |
| ▸ | THPO | P40225 | 1/20 | 0.30 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Methacrylic Acid SCHEMBL28236245 | 0.85 | HSD11B1 (0.46) | HSD11B1L3MBTL1EPHX2NPSR1MAPT | |
| Adamantane SCHEMBL22115918 | 0.81 | TDP1 (0.38) | HSD11B1L3MBTL1EPHX2MAPTCYP2C9 | |
| Adamantane SCHEMBL21924976 | 0.81 | TDP1 (0.38) | HSD11B1L3MBTL1EPHX2MAPTCYP2C9 | |
| Adamantane SCHEMBL131439 | 0.81 | TDP1 (0.38) | HSD11B1L3MBTL1EPHX2MAPTCYP2C9 | |
| Acrylic Acid SCHEMBL27134396 | 0.81 | HSD11B1 (0.48) | HSD11B1L3MBTL1EPHX2NPSR1MAPT | |
| Methacrylic Acid SCHEMBL15284344 | 0.80 | EPHX2 (0.42) | HSD11B1L3MBTL1EPHX2NPSR1TSHR | |
| SCHEMBL39664 | 0.78 | HSD11B1 (0.44) | HSD11B1L3MBTL1EPHX2NPSR1CYP2C9 | |
| Adamantan-2-Ol SCHEMBL5405211 | 0.78 | CYP2C9 (0.56) | HSD11B1L3MBTL1EPHX2MAPTCYP2C9 | |
| Methacrylic Acid SCHEMBL2965962 | 0.78 | HSD11B1 (0.39) | HSD11B1L3MBTL1EPHX2MAPTCYP2C9 | |
| SCHEMBL6657914 | 0.76 | HSD11B1 (0.42) | HSD11B1L3MBTL1EPHX2NPSR1CYP2C9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-109070232-A | FUNCTIONALIZED LAMINATED OPTICAL ELEMENT WITH IMPROVED EDGING RESISTANCE | 依视路国际公司 | 2018-12-21 | — | — | CN | disclosed |
| CN-103189206-B | Hard coating film and front protective plate | MITSUBISHI RAYON CO | 2015-03-18 | — | — | CN | disclosed |
| CN-101952269-B | Sulphonium salt initiators | BASF SE | 2014-06-25 | — | — | CN | disclosed |
| CN-102026967-B | Sulphonium salt initiators | CIBA HOLDING INC | 2013-09-18 | — | — | CN | disclosed |
| CN-101815733-B | Polymers for use in photoresist compositions | AZ ELECTRONIC MATERIALS USA | 2013-06-19 | — | — | CN | disclosed |
| CN-1989455-B | Oxime derivatives and the use therof as latent acids | CIBA SPECIALTY CHEMICALS HOLDING INC. (CH) | 2011-12-21 | — | — | CN | disclosed |
| CN-1755523-B | Chemically amplified resist composition | SUMITOMO CHEMICAL CO | 2011-11-23 | — | — | CN | disclosed |
| CN-102026967-A | Sulphonium salt initiators | CIBA HOLDING INC | 2011-04-20 | — | — | CN | disclosed |
| CN-101995770-A | Photoresist composition | SUMITOMO CHEMICAL CO | 2011-03-30 | — | — | CN | disclosed |
| CN-101952269-A | Sulphonium salt initiators | BASF SE | 2011-01-19 | — | — | CN | disclosed |
| US-20070207408-A1 | Polymers, positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-09-06 | — | — | US | disclosed |
| US-7255973-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-14 | — | — | US | disclosed |
| CN-1989455-A | Oxime derivatives and the use therof as latent acids | CIBA SC HOLDING AG (CH) | 2007-06-27 | — | — | CN | disclosed |
| CN-1321351-C | Chemical reinforcing type positive photoresist composition | SUMITOMO CHEMICAL CO (JP) | 2007-06-13 | — | — | CN | disclosed |
| US-20070111140-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-20070072115-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-29 | — | — | US | disclosed |
| CN-1755523-A | Chemically amplified resist composition | SUMITOMO CHEMICAL CO (JP) | 2006-04-05 | — | — | CN | disclosed |
| US-20050227173-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2005-10-13 | — | — | US | disclosed |
| US-20050227174-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2005-10-13 | — | — | US | disclosed |
| CN-1366212-A | Chemical reinforcing type positive photoresist composition | SUMITOMO CHEMICAL CO (JP) | 2002-08-28 | — | — | CN | disclosed |