Methacrylic Acid

Methacrylic Acid

SCHEMBL2965962

C=C(C)C(=O)O.CC1C2CC3CC(C2)CC1C3

nearest known ligand 0.39

Full drug profile on Sugi Atlas →

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 2/20 0.39
MAPT P10636 1/20 0.36
CYP2C9 P11712 1/20 0.33
EPHX2 P34913 3/20 0.32
L3MBTL1 Q9Y468 2/20 0.32
HSD17B10 Q99714 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Adamantane SCHEMBL21924976 0.86 TDP1 (0.38) HSD11B1MAPTCYP2C9EPHX2L3MBTL1
Adamantane SCHEMBL22115918 0.86 TDP1 (0.38) HSD11B1MAPTCYP2C9EPHX2L3MBTL1
Adamantane SCHEMBL131439 0.86 TDP1 (0.38) HSD11B1MAPTCYP2C9EPHX2L3MBTL1
Adamantan-2-Ol SCHEMBL5405211 0.83 CYP2C9 (0.56) HSD11B1MAPTCYP2C9EPHX2L3MBTL1
Methacrylic Acid SCHEMBL6865018 0.81 HSD11B1 (0.38) HSD11B1MAPTCYP2C9EPHX2L3MBTL1
Acrylic Acid SCHEMBL27529960 0.78 LMNA (0.43) HSD11B1MAPTCYP2C9EPHX2L3MBTL1
Methacrylic Acid SCHEMBL3906229 0.78 HSD11B1 (0.48) HSD11B1MAPTCYP2C9EPHX2L3MBTL1
Methacrylic Acid SCHEMBL27806190 0.78 EPHX1 (0.37) HSD11B1MAPTCYP2C9EPHX2L3MBTL1
Methacrylic Acid SCHEMBL479571 0.77 TDP1 (0.35) HSD11B1
Methacrylic Acid SCHEMBL4167447 0.77 TDP1 (0.35) HSD11B1CYP2C9EPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 56 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114044843-A Photoresist resin and preparation method and application thereof 宁波南大光电材料有限公司 2022-02-15 CN claimed
CN-103592717-B Light guide plate, light emitting unit and liquid crystal display element having the same CHI MEI CORP. (CN) 2015-10-28 CN claimed
CN-118240132-A Post-treatment method and application of photoresist resin 徐州博康信息化学品有限公司 2024-06-25 CN disclosed
CN-114044843-A Photoresist resin and preparation method and application thereof 宁波南大光电材料有限公司 2022-02-15 CN disclosed
CN-110734520-B ArF photoresist resin with high adhesiveness and preparation method thereof 宁波南大光电材料有限公司 2021-11-26 CN disclosed
CN-108659223-B Cyclodextrin derivative type photosensitive resin, preparation method thereof, resist composition based on cyclodextrin derivative type photosensitive resin and application of resist composition 中科院广州化学有限公司南雄材料生产基地 2020-12-04 CN disclosed
CN-110734520-A ArF photoresist resin with high adhesiveness and preparation method thereof 宁波南大光电材料有限公司 2020-01-31 CN disclosed
CN-107848947-A Fluorochemical, living polymerization initiator, fluoropolymer, the manufacture method of fluoropolymer and anti-corrosion agent composition DIC株式会社 2018-03-27 CN disclosed
CN-104007623-B The chemical reinforced slushing compound of positive tone organic solvent imaging 国际商业机器公司 2017-06-16 CN disclosed
CN-106796373-A Cured film is formed with composition, orientation material and phase difference material 日产化学工业株式会社 2017-05-31 CN disclosed
CN-103025835-B The compositions of coating on photoetching agent pattern 默克专利有限公司 2016-06-29 CN disclosed
EP-1319981-A2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2003-06-18 EP disclosed
EP-1296190-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2003-03-26 EP disclosed
US-20030003391-A1 High resolution photoresist compositions SHIPLEY COMPANY, L.L.C. (US) 2003-01-02 US disclosed
US-20020102491-A1 Comprising iodinium or sulfonium salt capable of generating a specified sulfonic acid upon irradiation and an acid decomposable resin (such as polyhydroxystyrene) FUJI PHOTO FILM CO., LTD. 2002-08-01 US disclosed
EP-1199603-A9 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2002-07-31 EP disclosed
US-6410204-B1 CONTAINING ACID GENERATOR FUJI PHOTO FILM CO., LTD. (JP) 2002-06-25 US disclosed
US-20020061464-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2002-05-23 US disclosed
EP-1199603-A1 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2002-04-24 EP disclosed
EP-1122607-A1 High resolution photoresist compositions Shipley Company LLC (US) 2001-08-08 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020102491-A1 Comprising iodinium or sulfonium salt capable of generating a specified sulfonic acid upon irradiation and an acid decomposable resin (such as polyhydroxystyrene) RARA, ARSA, RARB HSD11B1 2555/4885MAPT 1592/4885CYP2C9 4681/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.