SCHEMBL3947822

SCHEMBL3947822

C=C(OCC)C1C2CC3CC(C2)CC1C3

nearest known ligand 0.33

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.33
CYP2C9 P11712 1/20 0.32
HSD11B1 P28845 1/20 0.32
LMNA P02545 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
EPHX2 P34913 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1122469 0.77 ALDH1A1 (0.39) MAPK1HSD11B1LMNAL3MBTL1EPHX2
SCHEMBL10150478 0.75 PPM1B (0.44) MAPK1CYP2C9HSD11B1LMNAL3MBTL1
SCHEMBL21110908 0.75 CYP2C9 (0.39) CYP2C9HSD11B1L3MBTL1EPHX2
SCHEMBL11005084 0.71 EPHX2 (0.41) MAPK1HSD11B1L3MBTL1EPHX2
SCHEMBL13974646 0.68 PPM1B (0.39) MAPK1CYP2C9HSD11B1LMNAL3MBTL1
SCHEMBL29117542 0.67 HSD11B1 (0.37) MAPK1HSD11B1L3MBTL1EPHX2
SCHEMBL18045654 0.67 HSD11B1 (0.47) MAPK1HSD11B1LMNAL3MBTL1EPHX2
SCHEMBL18998718 0.67
Adamantane SCHEMBL29167166 0.67 THRB (0.52) LMNA
SCHEMBL29117558 0.66 MAPK1 (0.36) MAPK1HSD11B1LMNAL3MBTL1EPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7479364-B2 lithographic photoresist; deep UV, x-ray, electon beam: alpha-cyano- or an alpha-trifluoro methacrylate monomer and a vinyl ether monomer; 157 nm. INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-01-20 US disclosed
US-7358027-B2 Used to generate resist images on a substrate, i.e., in the manufacture of integrated circuits INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-04-15 US disclosed
US-20080085473-A1 lithographic photoresist; deep UV, x-ray, electon beam: alpha-cyano- or an alpha-trifluoro methacrylate monomer and a vinyl ether monomer; 157 nm. GLOBALFOUNDRIES U.S. INC. 2008-04-10 US disclosed
US-20030186160-A1 Used to generate resist images on a substrate, i.e., in the manufacture of integrated circuits GLOBALFOUNDRIES U.S. INC. 2003-10-02 US disclosed