SCHEMBL39663

SCHEMBL39663

CC[C]1C2CC3CC(C2)CC1C3

nearest known ligand 0.35

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27517386 0.97 TSHR (0.31) TSHR
SCHEMBL27509111 0.89
Magnesium Chloride Anhydrous SCHEMBL27528820 0.89
SCHEMBL190681 0.80 HSD11B1 (0.31)
SCHEMBL191695 0.76 EPHX2 (0.30)
SCHEMBL4881290 0.75
SCHEMBL7099142 0.75 EPHX2 (0.33) TSHR
SCHEMBL4885472 0.75
SCHEMBL7462960 0.73
Adamantane SCHEMBL1071737 0.68 L3MBTL1 (0.37)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 3201 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117265875-A Treating agent and fiber fabric or coating 北京马普新材料有限公司 2023-12-22 CN claimed
US-20230408918-A1 PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-12-21 US claimed
US-20230384683-A1 PHOTORESIST WITH POLAR-ACID-LABILE-GROUP TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-11-30 US claimed
CN-117089028-A Organic fluorine/silicon modified acrylic resin, method for producing same, antifouling composition containing same, and use thereof 大金氟化工(中国)有限公司 2023-11-21 CN claimed
US-11822251-B2 Photoresist with polar-acid-labile-group TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-11-21 US claimed
WO-2023195225-A1 FLUORINE-CONTAINING POLYMER AND FLUORINE-CONTAINING COMPOSITION ダイキン工業株式会社 2023-10-12 WO claimed
CN-111499905-B Fluoropolymer, coating composition, method for producing coated article, and coated article 大金工业株式会社 2023-08-18 CN claimed
CN-113544224-B Inkjet ink composition, image recording method, and image recorded matter 富士胶片株式会社 2023-05-23 CN claimed
CN-113454132-B Ultraviolet-absorbing polymer, molding resin composition, and molded article 东洋油墨SC控股株式会社 2023-05-09 CN claimed
CN-108885396-B Positive working photosensitive material 默克专利有限公司 2023-03-24 CN claimed
EP-1225479-A2 Chemical amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-07-24 EP claimed
US-20020042016-A1 Resist composition comprising photosensitive polymer having loctone in its backbone SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-04-11 US claimed
US-20010044070-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-11-22 US claimed
EP-1143299-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-10-10 EP claimed
CN-1316675-A Chemical amplifying type positive photoetching rubber composition SUMITOMO CHEMICAL CO (JP) 2001-10-10 CN claimed
US-20010024763-A1 Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2001-09-27 US claimed
EP-1120689-A2 Photosensitive copolymers of alkyl vinyl ether and resist compositions containing the same SAMSUNG ELECTRONICS CO. LTD. (KR) 2001-08-01 EP claimed
US-6239231-B1 HAS THE POLYMERIZATION UNIT OF 2-ALKYL-2-ADAMANTYL (METH)ACRYLATE AND ONE OR BOTH OF THE POLYMERIZATION UNIT OF 3-HYDROXY-1-ADAMANTYL (METH)ACRYLATE OR (METH)ACRYLONITRILE; ACID GENERATOR; SEMICONDUCTORS SUMITOMO CHEMICAL, COMPANY LIMITED (JP) 2001-05-29 US claimed
EP-1078945-A2 Polymer for use in a photoresist composition SAMSUNG ELECTRONICS CO. LTD. (KR) 2001-02-28 EP claimed
EP-0982628-A2 A chemical amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2000-03-01 EP claimed