⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3982973 | 0.87 | CA2 (0.32) | — | |
| SCHEMBL3980025 | 0.86 | CA1 (0.33) | — | |
| SCHEMBL36178 | 0.84 | CA2 (0.36) | — | |
| SCHEMBL4654799 | 0.81 | AGTR1 (0.33) | — | |
| SCHEMBL4655794 | 0.80 | MEN1 (0.36) | — | |
| SCHEMBL4654721 | 0.80 | HSD11B1 (0.35) | — | |
| SCHEMBL503265 | 0.80 | PKM (0.34) | — | |
| SCHEMBL2902293 | 0.79 | CA12 (0.30) | — | |
| SCHEMBL5400371 | 0.79 | AGTR1 (0.34) | — | |
| SCHEMBL2902301 | 0.79 | HTT (0.39) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118757-A1 | RADIATION-SENSITIVE RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-30 | — | — | US | disclosed |
| US-20260117026-A1 | DIELECTRIC MATERIALS BASED ON HETEROAROMATIC-EXTENDED BISMALEIMIDES | MERCK PATENT GMBH (DE) | 2026-04-30 | — | — | US | disclosed |
| EP-4594290-A1 | METAL COMPLEX AND FORMULATION FOR THE PREPARATION OF METAL OXIDE OPTICAL LAYERS | Merck Patent GmbH (DE) | 2025-08-06 | — | — | EP | disclosed |
| US-20250223308-A1 | METAL COMPLEX AND FORMULATION FOR THE PREPARATION OF METAL OXIDE OPTICAL LAYERS | MERCK PATENT GMBH (DE) | 2025-07-10 | — | — | US | disclosed |
| WO-2025094828-A1 | METHOD FOR PRODUCING HETEROPOLYOXOMETALATE HAVING MODIFIED LACUNARY SITE, OR MIXTURE THEREOF | 東京応化工業株式会社 | 2025-05-08 | — | — | WO | disclosed |
| EP-4301804-B1 | DIELECTRIC MATERIALS BASED ON AMIDE-IMIDE-EXTENDED BISMALEIMIDES | MERCK PATENT GMBH (DE) | 2024-12-04 | — | — | EP | disclosed |
| WO-2024216910-A1 | HIGH-CHEMICAL-RESISTANCE POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, PREPARATION METHOD THEREFOR, AND USE THEREOF | 明士(北京)新材料开发有限公司 | 2024-10-24 | — | — | WO | disclosed |
| US-20240254262-A1 | DIELECTRIC MATERIALS BASED ON OLIGOAMIDE-EXTENDED BISMALEIMIDES | MERCK PATENT GMBH (DE) | 2024-08-01 | — | — | US | disclosed |
| US-20240174805-A1 | DIELECTRIC MATERIALS BASED ON AMIDE-IMIDE-EXTENDED BISMALEIMIDES | MERCK PATENT GMBH (DE) | 2024-05-30 | — | — | US | disclosed |
| US-11970587-B2 | Covering material, cable, and method of manufacturing cable | PROTERIAL, LTD. (JP) | 2024-04-30 | — | — | US | disclosed |
| US-20130108962-A1 | RADIATION-SENSITIVE COMPOSITION | JSR CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |
| US-8361691-B2 | Radiation-sensitive composition and process for producing low-molecular compound for use therein | JSR CORPORATION (JP) | 2013-01-29 | — | — | US | disclosed |
| US-20090280433-A1 | RADIATION-SENSITIVE COMPOSITION AND PROCESS FOR PRODUCING LOW-MOLECULAR COMPOUND FOR USE THEREIN | JSR CORPORATION (JP) | 2009-11-12 | — | — | US | disclosed |
| EP-2060949-A1 | RADIATION-SENSITIVE COMPOSITION AND PROCESS FOR PRODUCING LOW-MOLECULAR COMPOUND FOR USE THEREIN | JSR Corporation (JP) | 2009-05-20 | — | — | EP | disclosed |
| EP-1640804-B1 | Positive-tone radiation-sensitive resin composition | JSR CORP (JP) | 2008-11-19 | — | — | EP | disclosed |
| US-7335457-B2 | Positive-tone radiation-sensitive resin composition | JSR CORPORATION (JP) | 2008-02-26 | — | — | US | disclosed |
| US-7258962-B2 | Positive-tone radiation-sensitive resin composition | JSR CORPORATION (JP) | 2007-08-21 | — | — | US | disclosed |
| US-20060078821-A1 | A caroboxyalkylanthracene based compound, a hydroxy or alkoxystyrene polymer, and a sulfonimide compound as photoacid generator; low sublimation properties and excellent compatibility with other components; exhibits optimum controllability of radiation transmittance; microfabrication | JSR CORPORATION (JP) | 2006-04-13 | — | — | US | disclosed |
| EP-1640804-A2 | Positive-tone radiation-sensitive resin composition | JSR Corporation (JP) | 2006-03-29 | — | — | EP | disclosed |
| US-20050244747-A1 | Positive-tone radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-11-03 | — | — | US | disclosed |