⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL230735 | 0.90 | CA2 (0.30) | — | |
| SCHEMBL209752 | 0.70 | — | — | |
| SCHEMBL11152234 | 0.69 | — | — | |
| SCHEMBL65045 | 0.68 | ALDH1A1 (0.31) | — | |
| SCHEMBL225593 | 0.67 | — | — | |
| SCHEMBL2368834 | 0.65 | CA4 (0.30) | — | |
| SCHEMBL17063125 | 0.65 | — | — | |
| SCHEMBL3103142 | 0.65 | — | — | |
| SCHEMBL704585 | 0.64 | — | — | |
| SCHEMBL703937 | 0.64 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230114933-A1 | GRAPHENE INTERCONNECT STRUCTURE, ELECTRONIC DEVICE INCLUDING GRAPHENE INTERCONNECT STRUCTURE, AND METHOD OF PREPARING GRAPHENE INTERCONNECT STRUCTURE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-04-13 | — | — | US | claimed |
| US-20090181178-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-07-16 | — | — | US | claimed |
| US-20050194619-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-09-08 | — | — | US | claimed |
| US-20230114933-A1 | GRAPHENE INTERCONNECT STRUCTURE, ELECTRONIC DEVICE INCLUDING GRAPHENE INTERCONNECT STRUCTURE, AND METHOD OF PREPARING GRAPHENE INTERCONNECT STRUCTURE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-04-13 | — | — | US | disclosed |
| US-8101236-B2 | Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-01-24 | — | — | US | disclosed |
| US-20110101489-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-05-05 | — | — | US | disclosed |
| US-7892648-B2 | SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-02-22 | — | — | US | disclosed |
| US-20090181178-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-07-16 | — | — | US | disclosed |
| US-7381659-B2 | Method for reducing film stress for SiCOH low-k dielectric materials | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-06-03 | — | — | US | disclosed |
| US-20070117408-A1 | METHOD FOR REDUCING FILM STRESS FOR SICOH LOW-K DIELECTRIC MATERIALS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-05-24 | — | — | US | disclosed |
| US-20050194619-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-09-08 | — | — | US | disclosed |