⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL22551525 | 0.88 | — | — | |
| SCHEMBL28062827 | 0.88 | MEN1 (0.38) | — | |
| SCHEMBL27959602 | 0.88 | ACHE (0.35) | — | |
| SCHEMBL28062733 | 0.88 | CYP2A6 (0.36) | — | |
| SCHEMBL715568 | 0.87 | MAPK1 (0.37) | — | |
| SCHEMBL3482167 | 0.84 | LPL (0.39) | — | |
| SCHEMBL14437832 | 0.84 | ALDH1A1 (0.38) | — | |
| SCHEMBL27959531 | 0.84 | TRPV6 (0.39) | — | |
| SCHEMBL2950779 | 0.79 | — | — | |
| SCHEMBL27959398 | 0.78 | RIPK1 (0.34) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9817312-B2 | Silicon-containing heat- or photo-curable composition | AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.À R.L. (LU) | 2017-11-14 | — | — | US | claimed |
| US-20160266490-A1 | SILICON-CONTAINING HEAT- OR PHOTO-CURABLE COMPOSITION | AZ ELECTRONIC MATERIALS S.À R.L. (LU) | 2016-09-15 | — | — | US | claimed |
| US-12473405-B2 | Polyorganosiloxane, polyorganosiloxane composition, cured product, polyorganosiloxane-containing electrolytic solution for electrolytic capacitor, and electrolytic capacitor using same | MITSUBISHI CHEMICAL CORPORATION (JP) | 2025-11-18 | — | — | US | disclosed |
| EP-4159740-B1 | CYCLIC SILAZANE COMPOUND HAVING ALKOXYSILYL GROUP, METHOD FOR PRODUCING SAME, AND COMPOSITION, CURED PRODUCT AND COVERED SUBSTRATE CONTAINING SAME | SHINETSU CHEMICAL CO (JP) | 2025-10-29 | — | — | EP | disclosed |
| WO-2025053278-A1 | ORGANOPOLYSILOXANE, ORGANOPOLYSILOXANE COMPOSITION, CURED PRODUCT THEREOF, ORGANOPOLYSILOXANE FOR NEAR-INFRARED OPTICAL WAVEGUIDE, ORGANOPOLYSILOXANE COMPOSITION FOR NEAR-INFRARED OPTICAL WAVEGUIDE, CURED PRODUCT FOR NEAR-INFRARED OPTICAL WAVEGUIDE, NEAR-INFRARED OPTICAL WAVEGUIDE, NEAR-INFRARED OPTICAL TRANSMISSION MEMBER, AND NEAR-INFRARED OPTICAL WAVEGUIDE PRODUCTION METHOD | 三菱ケミカル株式会社 | 2025-03-13 | — | — | WO | disclosed |
| WO-2025053280-A1 | OPTICAL WAVEGUIDE AND OPTICAL MEMBER HAVING OPTICAL WAVEGUIDE | 三菱ケミカル株式会社 | 2025-03-13 | — | — | WO | disclosed |
| WO-2025053279-A1 | ORGANOPOLYSILOXANE, ORGANOPOLYSILOXANE-CONTAINING RESIN COMPOSITION, CURED PRODUCT THEREOF, ORGANOPOLYSILOXANE FOR NEAR-INFRARED OPTICAL WAVEGUIDE, ORGANOPOLYSILOXANE-CONTAINING RESIN COMPOSITION FOR NEAR-INFRARED OPTICAL WAVEGUIDE, CURED PRODUCT FOR NEAR-INFRARED OPTICAL WAVEGUIDE, NEAR-INFRARED OPTICAL WAVEGUIDE, NEAR-INFRARED OPTICAL TRANSMISSION MEMBER, AND NEAR-INFRARED OPTICAL WAVEGUIDE PRODUCTION METHOD | 三菱ケミカル株式会社 | 2025-03-13 | — | — | WO | disclosed |
| US-12071562-B2 | Cyclic silazane compound having alkoxysilyl group, method for producing same, and composition, cured product and covered substrate containing same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-08-27 | — | — | US | disclosed |
| US-20230250237-A1 | POLYORGANOSILOXANE, POLYORGANOSILOXANE COMPOSITION, CURED PRODUCT, POLYORGANOSILOXANE-CONTAINING ELECTROLYTIC SOLUTION FOR ELECTROLYTIC CAPACITOR, AND ELECTROLYTIC CAPACITOR USING SAME | MITSUBISHI CHEMICAL CORPORATION (JP) | 2023-08-10 | — | — | US | disclosed |
| US-20230108908-A1 | CYCLIC SILAZANE COMPOUND HAVING ALKOXYSILYL GROUP, METHOD FOR PRODUCING SAME, AND COMPOSITION, CURED PRODUCT AND COVERED SUBSTRATE CONTAINING SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-04-06 | — | — | US | disclosed |
| EP-4159740-A1 | CYCLIC SILAZANE COMPOUND HAVING ALKOXYSILYL GROUP, METHOD FOR PRODUCING SAME, AND COMPOSITION, CURED PRODUCT AND COVERED SUBSTRATE CONTAINING SAME | Shin-Etsu Chemical Co., Ltd. (JP) | 2023-04-05 | — | — | EP | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100233482-A1 | Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device | HAMADA YOSHITAKA | 2010-09-16 | — | — | US | disclosed |
| US-7754330-B2 | Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-13 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20090294922-A1 | ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | PANASONIC CORPORATION (JP) | 2009-12-03 | — | — | US | disclosed |
| US-20090294726-A1 | ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-03 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-4739089-A | Acylation of polysilylaromatic organic compounds and products obtained therefrom | GENERAL ELECTRIC COMPANY (US) | 1988-04-19 | — | — | US | disclosed |