SCHEMBL4073158

SCHEMBL4073158

C=C(C)C(=O)OCC(O)COC1CCCCC1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.46
KDM4E B2RXH2 2/20 0.39
ALDH1A1 P00352 4/20 0.38
MAPT P10636 1/20 0.37
HTT P42858 4/20 0.36
LMNA P02545 2/20 0.36
NPSR1 Q6W5P4 1/20 0.36
TDP1 Q9NUW8 1/20 0.36
CRHBP P24387 1/20 0.36
CRHR2 Q13324 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
PRMT5 O14744 2/20 0.35
WDR77 Q9BQA1 2/20 0.35
ADRB2 P07550 1/20 0.35
ADRB1 P08588 1/20 0.35
ADRB3 P13945 1/20 0.35
RGS12 O14924 1/20 0.34
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13879034 0.92 TSHR (0.50) TSHRKDM4EALDH1A1HTTNPSR1
SCHEMBL24519282 0.86 TSHR (0.47) TSHRKDM4EALDH1A1MAPTSMN1; SMN2
SCHEMBL22845686 0.84 KDM4E (0.43) KDM4EALDH1A1MAPTHTTLMNA
SCHEMBL23369734 0.82 ADRB2 (0.54) TSHRKDM4EALDH1A1SMN1; SMN2ADRB2
SCHEMBL94906 0.80 TSHR (0.68) TSHRKDM4EALDH1A1MAPTHTT
SCHEMBL24755313 0.79 KDM4E (0.53) TSHRKDM4EALDH1A1MAPTHTT
SCHEMBL14982776 0.79 ALDH1A1 (0.43) TSHRALDH1A1HTTNPSR1
SCHEMBL36342 0.79 ALDH1A1 (0.43) TSHRALDH1A1HTTNPSR1
SCHEMBL28514509 0.78 TSHR (0.49) TSHRALDH1A1HTTADRB2ADRB1
SCHEMBL19998240 0.78 TSHR (0.65) TSHRKDM4EALDH1A1MAPTHTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 106 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117430812-B Photosensitive polyamic acid ester resin, resin composition and application 明士(北京)新材料开发有限公司 2024-03-19 CN claimed
CN-116577965-B Negative photosensitive solid adhesive film and preparation method thereof 明士(北京)新材料开发有限公司 2023-10-03 CN claimed
CN-116577965-A Negative photosensitive solid adhesive film and preparation method thereof 明士(北京)新材料开发有限公司 2023-08-11 CN claimed
CN-116333303-B Anti-mould-pressing alkaline aqueous development photosensitive adhesive film and application thereof 明士(北京)新材料开发有限公司 2023-08-04 CN claimed
CN-116333303-A Anti-mould-pressing alkaline aqueous development photosensitive adhesive film and application thereof 明士(北京)新材料开发有限公司 2023-06-27 CN claimed
CN-115407610-B Photosensitive resin composition, preparation method and application thereof 明士(北京)新材料开发有限公司 2023-05-16 CN claimed
CN-115437218-A Photosensitive resin with symmetrical and asymmetrical structures and preparation method and application thereof 明士(北京)新材料开发有限公司 2022-12-06 CN claimed
CN-115407610-A Photosensitive resin composition and preparation method and application thereof 明士(北京)新材料开发有限公司 2022-11-29 CN claimed
CN-114995060-B Negative photosensitive resin composition capable of being cured at low temperature and preparation method and application thereof 明士(北京)新材料开发有限公司 2022-11-01 CN claimed
CN-114995060-A Negative photosensitive resin composition capable of being cured at low temperature and preparation method and application thereof 明士(北京)新材料开发有限公司 2022-09-02 CN claimed
CN-114280887-A Negative photosensitive solid glue film developed by alkaline water system and preparation method thereof 明士(北京)新材料开发有限公司 2022-04-05 CN claimed
CN-111522200-B Negative PSPI resin for 12-inch silicon wafer and preparation method and application thereof 中国科学院化学研究所 2021-07-27 CN claimed
CN-111522200-A Negative PSPI resin for 12-inch silicon wafer and preparation method and application thereof 中国科学院化学研究所 2020-08-11 CN claimed
CN-110028670-A Low-dielectric loss negative light-sensitive poly amic acid ester resin, resin combination, preparation method and application 明士新材料有限公司 2019-07-19 CN claimed
CN-110028669-A Negative photosensitive poly amic acid ester resin, resin combination, preparation method and application 明士新材料有限公司 2019-07-19 CN claimed
WO-2026100338-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING CURED RELIEF PATTERN 旭化成株式会社 2026-05-15 WO disclosed
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ASAHI KASEI KABUSHIKI KAISHA (JP) 2026-04-28 US disclosed
EP-1775316-A1 POLYAMIDE Asahi Kasei EMD Corporation (JP) 2007-04-18 EP disclosed
US-20050244739-A1 Highly heat-resistant, negative-type photosensitive resin composition ASAHI KASEI EMD CORPORATION (JP) 2005-11-03 US disclosed
EP-1536286-A1 HIGHLY HEAT-RESISTANT, NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION Asahi Kasei EMD Corporation (JP) 2005-06-01 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ARCN1, GLRA1, PSMA1 TSHR 3312/4885KDM4E 295/4885ALDH1A1 3316/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.