SCHEMBL4084762

SCHEMBL4084762

C=CCc1c(C=C)ccc2cc3ccccc3cc12

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.36
MEN1 O00255 2/20 0.36
MAPT P10636 2/20 0.36
PKM P14618 2/20 0.36
MAPK1 P28482 2/20 0.36
KMT2A Q03164 2/20 0.36
CYP1A2 P05177 2/20 0.36
MITF O75030 1/20 0.36
CYP2C9 P11712 1/20 0.36
RAB9A P51151 1/20 0.36
CCR6 P51684 1/20 0.36
NPSR1 Q6W5P4 1/20 0.36
HSD17B10 Q99714 2/20 0.35
HIF1A Q16665 1/20 0.35
CYP1B1 Q16678 1/20 0.35
HTR2A P28223 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
IMPDH2 P12268 1/20 0.33
KDM4E B2RXH2 2/20 0.31
EGFR P00533 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2533977 0.84 HSD17B10 (0.40) ALDH1A1MAPTCYP1A2CYP2C9HSD17B10
SCHEMBL7477557 0.81 ALDH1A1 (0.36) ALDH1A1MEN1MAPTPKMMAPK1
SCHEMBL28826002 0.80 SRD5A1 (0.45) ALDH1A1MEN1MAPTKMT2ACYP1A2
SCHEMBL3806608 0.78 IMPDH2 (0.36) ALDH1A1MEN1MAPTPKMMAPK1
Phosphonic Acid SCHEMBL27731611 0.78 HSD17B10 (0.39) ALDH1A1MEN1MAPTKMT2ACYP1A2
SCHEMBL30300202 0.76 HTR2A (0.54) ALDH1A1MEN1KMT2ACYP1A2CYP2C9
SCHEMBL2143244 0.76 HTR2A (0.54) ALDH1A1MEN1KMT2ACYP1A2CYP2C9
SCHEMBL8741111 0.76 MAPT (0.41) MAPT
SCHEMBL29368544 0.75 ALDH1A1 (0.40) ALDH1A1MEN1MAPTPKMMAPK1
SCHEMBL5068229 0.75 ALDH1A1 (0.40) ALDH1A1MEN1MAPTPKMMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1429185-B1 ETCHING METHOD AND USE OF A COMPOSITION FOR FORMING ETCHING PROTECTIVE LAYER AZ ELECTRONIC MATERIALS USA (US) 2009-05-13 EP disclosed
CN-100478781-C Etching method and composition for forming etching protective layer AZ ELECTRONIC MATERIALS JAPAN (JP) 2009-04-15 CN disclosed
US-7141177-B2 Etching method and composition for forming etching protective layer AZ ELECTRONIC MATERIALS USA CORP. (US) 2006-11-28 US disclosed
CN-1555510-A Etching method and composition for forming etching protective layer ���Ͽع����޹�˾ 2004-12-15 CN disclosed
US-20040238486-A1 Etching method and composition for forming etching protective layer MERCK PATENT GMBH (DE) 2004-12-02 US disclosed
EP-1429185-A1 ETCHING METHOD AND COMPOSITION FOR FORMING ETCHING PROTECTIVE LAYER Clariant International Ltd. (CH) 2004-06-16 EP disclosed
EP-0197303-B1 ELECTRICAL INSULATING MATERIALS Nippon Petrochemicals Co., Ltd. (JP) 1989-10-18 EP disclosed
US-4804729-A COPOLYMER OF ETHYLENE AND AROMATIC COMPOUND HAVING 1-3 RINGS AND 2 DOUBLE BONDS; HIGH VOLTAGE AND HEAT RESISTANCE NIPPON PETROCHEMICALS, CO., LTD. (JP) 1989-02-14 US disclosed
EP-0197303-A2 Electrical insulating materials Nippon Petrochemicals Co., Ltd. (JP) 1986-10-15 EP disclosed