Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ESR2 | Q92731 | 7/20 | 0.56 |
| ▸ | ESR1 | P03372 | 6/20 | 0.56 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.55 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.50 |
| ▸ | MEN1 | O00255 | 4/20 | 0.47 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.47 |
| ▸ | LMNA | P02545 | 2/20 | 0.47 |
| ▸ | MAPT | P10636 | 2/20 | 0.47 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.47 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.47 |
| ▸ | OPRK1 | P41145 | 1/20 | 0.47 |
| ▸ | PDK2 | Q15119 | 2/20 | 0.44 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.40 |
| ▸ | ALOX15 | P16050 | 2/20 | 0.40 |
| ▸ | TSHR | P16473 | 2/20 | 0.40 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.40 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.40 |
| ▸ | TP53 | P04637 | 1/20 | 0.40 |
| ▸ | TYMS | P04818 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29506856 | 1.00 | ESR2 (0.56) | ESR2ESR1HSP90AA1CYP1A2MEN1 | |
| SCHEMBL30624510 | 1.00 | ESR2 (0.56) | ESR2ESR1HSP90AA1CYP1A2MEN1 | |
| SCHEMBL26216183 | 0.98 | ESR2 (0.54) | ESR2ESR1HSP90AA1CYP1A2MEN1 | |
| SCHEMBL16311015 | 0.97 | ESR2 (0.53) | ESR2ESR1HSP90AA1CYP1A2MEN1 | |
| SCHEMBL16137632 | 0.97 | CYP1A2 (0.57) | ESR2ESR1HSP90AA1CYP1A2MEN1 | |
| Betanaphthol SCHEMBL28384794 | 0.97 | CYP1A2 (0.57) | ESR2ESR1HSP90AA1CYP1A2MEN1 | |
| SCHEMBL18385989 | 0.95 | ESR2 (0.51) | ESR2ESR1HSP90AA1CYP1A2MEN1 | |
| SCHEMBL18386044 | 0.94 | ESR2 (0.50) | ESR2ESR1HSP90AA1CYP1A2MEN1 | |
| SCHEMBL12938479 | 0.94 | ESR2 (0.50) | ESR2ESR1HSP90AA1CYP1A2MEN1 | |
| SCHEMBL18386026 | 0.94 | ESR2 (0.50) | ESR2ESR1HSP90AA1CYP1A2MEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 530 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111393859-B | Low-dielectric high-strength flexible transparent conductive film special for folding screen | 顺德职业技术学院 | 2021-11-23 | — | — | CN | claimed |
| CN-111518504-A | High-refraction high-transparency light path glue special for optical communication device | 顺德职业技术学院 | 2020-08-11 | — | — | CN | claimed |
| CN-111393859-A | Low-dielectric high-strength flexible transparent conductive film special for folding screen | 顺德职业技术学院 | 2020-07-10 | — | — | CN | claimed |
| US-20260146131-A1 | HEAT-RESISTANT POLYSULFATES AND METHODS OF THEIR USE | THE SCRIPPS RESEARCH INSTITUTE (US) | 2026-05-28 | — | — | US | disclosed |
| US-12570593-B2 | Triarylmethane compounds | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2026-03-10 | — | — | US | disclosed |
| EP-4679489-A1 | TEMPORARY ADHESIVE CONTAINING SILICONE-BASED RESIN, AND PROCESSING METHOD FOR SUBSTRATE WITH CIRCUIT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-14 | — | — | EP | disclosed |
| US-20260008931-A1 | ORGANIC POLYMER, SEMICONDUCTOR HARD MASK COMPOSITION COMPRISING SAME, AND PATTERNING METHOD USING SAME | HUNETPLUS CO LTD (KR) | 2026-01-08 | — | — | US | disclosed |
| EP-3888938-B1 | RUBBERY COMPOSITION AND METHOD FOR PRODUCING SAME | OSAKA GAS CO LTD (JP) | 2026-01-07 | — | — | EP | disclosed |
| US-20260005022-A1 | SPIN ON CARBON HARDMASK COMPOSITIONS WITH LOW EVAPORATION LOSS AND PATTERNING METHOD BY USING THE SAME | YCCHEM CO LTD (KR) | 2026-01-01 | — | — | US | disclosed |
| US-20250362595-A1 | COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-11-27 | — | — | US | disclosed |
| EP-4653955-A2 | COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-11-26 | — | — | EP | disclosed |
| EP-2447775-A1 | Resist underlayer film composition and patterning process using the same | Shin-Etsu Chemical Co., Ltd. (JP) | 2012-05-02 | — | — | EP | disclosed |
| US-20120064725-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-15 | — | — | US | disclosed |
| US-20120064725-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-15 | — | — | US | disclosed |
| US-20110311920-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, RESIST BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2011-12-22 | — | — | US | disclosed |
| US-20110311920-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, RESIST BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2011-12-22 | — | — | US | disclosed |
| US-20110177459-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-21 | — | — | US | disclosed |
| US-20110177459-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-21 | — | — | US | disclosed |
| US-20100099044-A1 | Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film | SHIN-ETSU CHEMICAL CO.,LTD. (JP) | 2010-04-22 | — | — | US | disclosed |
| US-20100099044-A1 | Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film | SHIN-ETSU CHEMICAL CO.,LTD. (JP) | 2010-04-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12570593-B2 | Triarylmethane compounds | CBR1, CBR3, NCOR2 | ESR2 100/4885ESR1 672/4885HSP90AA1 2030/4885 |
| US-20110311920-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, RESIST BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS | SMC1A, VCAM1, APOB | ESR2 195/4885ESR1 431/4885HSP90AA1 2024/4885 |
| US-20260008931-A1 | ORGANIC POLYMER, SEMICONDUCTOR HARD MASK COMPOSITION COMPRISING SAME, AND PATTERNING METHOD USING SAME | ARCN1, RB1, GAR1 | ESR2 474/4885ESR1 303/4885HSP90AA1 2695/4885 |
| US-20260005022-A1 | SPIN ON CARBON HARDMASK COMPOSITIONS WITH LOW EVAPORATION LOSS AND PATTERNING METHOD BY USING THE SAME | SIK1, SBK1, SGK1 | ESR2 2444/4885ESR1 3461/4885HSP90AA1 605/4885 |
| US-20260146131-A1 | HEAT-RESISTANT POLYSULFATES AND METHODS OF THEIR USE | HSF1, HSPB1, HSPA4L | ESR2 2326/4885ESR1 4166/4885HSP90AA1 18/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.