SCHEMBL4150686

SCHEMBL4150686

C[SiH](C)c1ccc([SiH](C)C)c2ccccc12

nearest known ligand 0.38

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 4/20 0.38
ALDH1A1 P00352 5/20 0.35
KDM4E B2RXH2 1/20 0.35
MAPK1 P28482 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
CYP2A6 P11509 4/20 0.33
GPR3 P46089 4/20 0.33
HSD17B10 Q99714 2/20 0.33
TSHR P16473 2/20 0.33
TDP1 Q9NUW8 1/20 0.33
IDO1 P14902 1/20 0.32
CYP2C19 P33261 1/20 0.31
HPRT1 P00492 1/20 0.30
ACHE P22303 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29638132 1.00 CYP1A2 (0.38) CYP1A2ALDH1A1KDM4EMAPK1SMN1; SMN2
SCHEMBL4144518 0.88 CYP2A6 (0.38) CYP1A2ALDH1A1CYP2A6HSD17B10TSHR
SCHEMBL29638145 0.88 CYP2A6 (0.38) CYP1A2ALDH1A1CYP2A6HSD17B10TSHR
SCHEMBL16303906 0.85 IDO1 (0.59) CYP1A2HSD17B10TSHRTDP1IDO1
SCHEMBL148575 0.76 TSHR (0.35) CYP1A2ALDH1A1CYP2A6TSHRTDP1
SCHEMBL21936342 0.76 TSHR (0.35) CYP1A2ALDH1A1CYP2A6TSHRTDP1
SCHEMBL14600050 0.73 ALDH1A1 (0.44) CYP1A2ALDH1A1KDM4EMAPK1SMN1; SMN2
SCHEMBL23700718 0.71 CYP1A2 (0.40) CYP1A2ALDH1A1KDM4EMAPK1SMN1; SMN2
SCHEMBL29638139 0.71 CYP1A2 (0.40) CYP1A2ALDH1A1KDM4EMAPK1SMN1; SMN2
SCHEMBL21722357 0.69 MEN1 (0.33) CYP1A2ALDH1A1KDM4EMAPK1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6924545-B2 Low-dielectric-constant interlayer insulating film composed of borazine-silicon-based polymer and semiconductor device NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE (JP) 2005-08-02 US claimed
US-20020142533-A1 Low-dielectric-constant interlayer insulating film composed of borazine-silicon-based polymer and semiconductor device MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2002-10-03 US claimed
US-12497511-B2 Crosslinkable organopolysiloxane compositions WACKER CHEMIE AG (DE) 2025-12-16 US disclosed
US-12187854-B2 Crosslinkable organosiloxane compositions WACKER CHEMIE AG (DE) 2025-01-07 US disclosed
US-12110393-B2 Crosslinkable organopolysiloxane compositions WACKER CHEMIE AG (DE) 2024-10-08 US disclosed
EP-3837317-B1 CROSSLINKABLE ORGANOSILOXANE COMPOSITIONS WACKER CHEMIE AG (DE) 2022-04-20 EP disclosed
US-20210347952-A1 CROSSLINKABLE ORGANOPOLYSILOXANE COMPOSITIONS WACKER CHEMIE AG (DE) 2021-11-11 US disclosed
US-20210238366-A1 CROSSLINKABLE ORGANOSILOXANE COMPOSITIONS WACKER CHEMIE AG (DE) 2021-08-05 US disclosed
US-8362199-B2 Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation HITACHI CHEMICAL CO., LTD. (JP) 2013-01-29 US disclosed
US-20110313122-A1 BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION MATSUTANI HIROSHI (JP) 2011-12-22 US disclosed
US-7625642-B2 Borazine-based resin, and method for production thereof, borazine based resin composition, insulating coating and method for formation thereof, and electronic parts having the insulating coating HITACHI CHEMICAL CO., LTD (JP) 2009-12-01 US disclosed
US-20090240017-A1 Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation HITACHI CHEMICAL CO., LTD. (JP) 2009-09-24 US disclosed
US-20060110610-A1 Borazine-based resin, and method for production thereof, borazine based resin composition, insulating coating and method for formation thereof, and electronic parts having the insulating coating NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2006-05-25 US disclosed
US-6924545-B2 Low-dielectric-constant interlayer insulating film composed of borazine-silicon-based polymer and semiconductor device NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE (JP) 2005-08-02 US disclosed
US-20020142533-A1 Low-dielectric-constant interlayer insulating film composed of borazine-silicon-based polymer and semiconductor device MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2002-10-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110313122-A1 BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION GRIK5, GJA1, SLC9A5 CYP1A2 4297/4885ALDH1A1 2955/4885KDM4E 535/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.