SCHEMBL4144518

SCHEMBL4144518

C[SiH](C)c1cccc2c([SiH](C)C)cccc12

nearest known ligand 0.38

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
CYP2A6 P11509 3/20 0.38
CYP1A2 P05177 3/20 0.38
ALDH1A1 P00352 2/20 0.32
CYP3A4 P08684 1/20 0.32
HPGD P15428 1/20 0.32
TSHR P16473 1/20 0.32
HSD17B10 Q99714 1/20 0.32
TDP1 Q9NUW8 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29638145 1.00 CYP2A6 (0.38) CYP2A6CYP1A2ALDH1A1CYP3A4HPGD
SCHEMBL29638132 0.88 CYP1A2 (0.38) CYP2A6CYP1A2ALDH1A1TSHRHSD17B10
SCHEMBL4150686 0.88 CYP1A2 (0.38) CYP2A6CYP1A2ALDH1A1TSHRHSD17B10
SCHEMBL420389 0.84 ALDH1A1 (0.48) CYP2A6CYP1A2ALDH1A1CYP3A4HPGD
SCHEMBL14600050 0.78 ALDH1A1 (0.44) CYP2A6CYP1A2ALDH1A1CYP3A4HPGD
SCHEMBL21936342 0.76 TSHR (0.35) CYP2A6CYP1A2ALDH1A1TSHRTDP1
SCHEMBL148575 0.76 TSHR (0.35) CYP2A6CYP1A2ALDH1A1TSHRTDP1
SCHEMBL23700591 0.75 ALDH1A1 (0.37) CYP2A6CYP1A2ALDH1A1CYP3A4HPGD
SCHEMBL29638131 0.75 ALDH1A1 (0.37) CYP2A6CYP1A2ALDH1A1CYP3A4HPGD
SCHEMBL3837700 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6924545-B2 Low-dielectric-constant interlayer insulating film composed of borazine-silicon-based polymer and semiconductor device NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE (JP) 2005-08-02 US claimed
US-20020142533-A1 Low-dielectric-constant interlayer insulating film composed of borazine-silicon-based polymer and semiconductor device MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2002-10-03 US claimed
US-12497511-B2 Crosslinkable organopolysiloxane compositions WACKER CHEMIE AG (DE) 2025-12-16 US disclosed
US-12187854-B2 Crosslinkable organosiloxane compositions WACKER CHEMIE AG (DE) 2025-01-07 US disclosed
US-12110393-B2 Crosslinkable organopolysiloxane compositions WACKER CHEMIE AG (DE) 2024-10-08 US disclosed
EP-3837317-B1 CROSSLINKABLE ORGANOSILOXANE COMPOSITIONS WACKER CHEMIE AG (DE) 2022-04-20 EP disclosed
US-20210347952-A1 CROSSLINKABLE ORGANOPOLYSILOXANE COMPOSITIONS WACKER CHEMIE AG (DE) 2021-11-11 US disclosed
US-20210309856-A1 CROSSLINKABLE ORGANOPOLYSILOXANE COMPOSITIONS WACKER CHEMIE AG (DE) 2021-10-07 US disclosed
US-20210238366-A1 CROSSLINKABLE ORGANOSILOXANE COMPOSITIONS WACKER CHEMIE AG (DE) 2021-08-05 US disclosed
US-8362199-B2 Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation HITACHI CHEMICAL CO., LTD. (JP) 2013-01-29 US disclosed
US-20110313122-A1 BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION MATSUTANI HIROSHI (JP) 2011-12-22 US disclosed
US-7625642-B2 Borazine-based resin, and method for production thereof, borazine based resin composition, insulating coating and method for formation thereof, and electronic parts having the insulating coating HITACHI CHEMICAL CO., LTD (JP) 2009-12-01 US disclosed
US-20090240017-A1 Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation HITACHI CHEMICAL CO., LTD. (JP) 2009-09-24 US disclosed
US-7427443-B2 Low dielectric constant insulating material and semiconductor device using the material NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2008-09-23 US disclosed
US-20060110610-A1 Borazine-based resin, and method for production thereof, borazine based resin composition, insulating coating and method for formation thereof, and electronic parts having the insulating coating NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2006-05-25 US disclosed
US-20060097393-A1 Low dielectric constant insulating material and semiconductor device using the material NATIONAL INST. OF ADV. INDUST. SCIENCE AND TECH. (JP) 2006-05-11 US disclosed
US-6924545-B2 Low-dielectric-constant interlayer insulating film composed of borazine-silicon-based polymer and semiconductor device NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE (JP) 2005-08-02 US disclosed
US-20020142533-A1 Low-dielectric-constant interlayer insulating film composed of borazine-silicon-based polymer and semiconductor device MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2002-10-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110313122-A1 BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION GRIK5, GJA1, SLC9A5 CYP2A6 4481/4885CYP1A2 4297/4885ALDH1A1 2955/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.