Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP1A2 | P05177 | 3/20 | 0.48 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.48 |
| ▸ | NPSR1 | Q6W5P4 | 6/20 | 0.47 |
| ▸ | CFTR | P13569 | 1/20 | 0.43 |
| ▸ | GOPC | Q9HD26 | 1/20 | 0.43 |
| ▸ | ERBB2 | P04626 | 1/20 | 0.42 |
| ▸ | FYN | P06241 | 1/20 | 0.42 |
| ▸ | MAOA | P21397 | 1/20 | 0.42 |
| ▸ | ACHE | P22303 | 1/20 | 0.42 |
| ▸ | AHR | P35869 | 1/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.41 |
| ▸ | THRB | P10828 | 1/20 | 0.41 |
| ▸ | HPGD | P15428 | 1/20 | 0.41 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.41 |
| ▸ | NPC1 | O15118 | 1/20 | 0.38 |
| ▸ | POLB | P06746 | 1/20 | 0.38 |
| ▸ | RAB9A | P51151 | 1/20 | 0.38 |
| ▸ | TAAR1 | Q96RJ0 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL416279 | 0.87 | CYP1A2 (0.53) | CYP1A2CYP2C19NPSR1CFTRGOPC | |
| SCHEMBL15998804 | 0.84 | MEN1 (0.38) | CYP1A2NPSR1ERBB2FYNMAOA | |
| SCHEMBL17774453 | 0.81 | CYP1A2 (0.41) | CYP1A2CYP2C19NPSR1ERBB2FYN | |
| SCHEMBL22167524 | 0.79 | CYP1A2 (0.49) | CYP1A2CYP2C19NPSR1CFTRGOPC | |
| SCHEMBL21971693 | 0.79 | CYP1A2 (0.46) | CYP1A2CYP2C19NPSR1CFTRGOPC | |
| SCHEMBL15998802 | 0.79 | MEN1 (0.45) | CYP1A2CYP2C19NPSR1CFTRGOPC | |
| SCHEMBL414941 | 0.76 | CYP1A2 (0.49) | CYP1A2CYP2C19NPSR1CFTRGOPC | |
| SCHEMBL28476451 | 0.76 | CYP1A2 (0.49) | CYP1A2CYP2C19NPSR1CFTRGOPC | |
| SCHEMBL21662347 | 0.76 | MEN1 (0.45) | CYP1A2CYP2C19NPSR1CFTRGOPC | |
| SCHEMBL22167529 | 0.76 | CYP1A2 (0.46) | CYP1A2CYP2C19NPSR1CFTRGOPC |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9045587-B2 | Naphthalene derivative, resist bottom layer material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-02 | — | — | US | disclosed |
| US-9045587-B2 | Naphthalene derivative, resist bottom layer material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-02 | — | — | US | disclosed |
| US-20140363768-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-11 | — | — | US | disclosed |
| US-20140363768-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-11 | — | — | US | disclosed |
| US-8846846-B2 | Naphthalene derivative, resist bottom layer material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-30 | — | — | US | disclosed |
| US-8846846-B2 | Naphthalene derivative, resist bottom layer material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-30 | — | — | US | disclosed |
| US-8795955-B2 | Naphthalene derivative, resist bottom layer material, resist bottom layer forming method, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8795955-B2 | Naphthalene derivative, resist bottom layer material, resist bottom layer forming method, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-20120064725-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-15 | — | — | US | disclosed |
| US-20120064725-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-15 | — | — | US | disclosed |
| US-20110311920-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, RESIST BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2011-12-22 | — | — | US | disclosed |
| US-20110311920-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, RESIST BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2011-12-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110311920-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, RESIST BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS | SMC1A, VCAM1, APOB | CYP1A2 649/4885CYP2C19 2115/4885NPSR1 2172/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.