SCHEMBL4270396

SCHEMBL4270396

CCc1ccccc1[SiH](OC(C)CC)OC(C)CC

nearest known ligand 0.33

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
MAPT P10636 2/20 0.33
NPSR1 Q6W5P4 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
GABRA1 P14867 2/20 0.32
GABRB2 P47870 2/20 0.32
MGLL Q99685 1/20 0.31
ADRA2A P08913 1/20 0.31
ADRA2B P18089 1/20 0.31
ADRA2C P18825 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4272041 0.85 GABRA1 (0.34) MAPTNPSR1L3MBTL1GABRA1GABRB2
SCHEMBL4266065 0.80 ALDH1A1 (0.33) NPSR1
SCHEMBL4274033 0.75 GABRA1 (0.38) MAPTNPSR1L3MBTL1GABRA1GABRB2
SCHEMBL16834604 0.75 MAPT (0.36) MAPTNPSR1
SCHEMBL4267871 0.73 MAPT (0.40) MAPTNPSR1L3MBTL1GABRA1GABRB2
SCHEMBL17391555 0.72 ALDH1A1 (0.32) NPSR1
SCHEMBL4082977 0.70
SCHEMBL4267262 0.70 GABRA1 (0.39) MAPTNPSR1L3MBTL1GABRA1GABRB2
SCHEMBL4281348 0.70 ALDH1A1 (0.40) MAPTNPSR1L3MBTL1GABRA1GABRB2
SCHEMBL28290045 0.70 GABRA1 (0.41) MAPTNPSR1L3MBTL1GABRA1GABRB2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7604866-B2 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2009-10-20 US disclosed
US-20060269724-A1 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2006-11-30 US disclosed
US-20040077757-A1 Coating composition for use in producing an insulating thin film ASAHI KASEI KABUSHIKI KAISHA (JP) 2004-04-22 US disclosed