SCHEMBL432009

SCHEMBL432009

CCC(C)[Si](Oc1ccccc1)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.39
LTA4H P09960 3/20 0.36
MAOA P21397 1/20 0.36
PTGS1 P23219 1/20 0.36
CA4 P22748 1/20 0.36
TSHR P16473 1/20 0.33
TRPA1 O75762 1/20 0.33
KDM4E B2RXH2 1/20 0.33
CHRNB2 P17787 1/20 0.33
CHRNB4 P30926 1/20 0.33
CHRNA3 P32297 1/20 0.33
CHRNA7 P36544 1/20 0.33
CHRNA4 P43681 1/20 0.33
KCNA3 P22001 1/20 0.33
NPY5R Q15761 1/20 0.33
ALDH1A1 P00352 2/20 0.33
MTNR1A P48039 4/20 0.33
MTNR1B P49286 4/20 0.33
ADRB2 P07550 1/20 0.33
ADRB1 P08588 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2397780 0.86 LMNA (0.38) LMNALTA4HMAOAPTGS1CA4
SCHEMBL430249 0.83 LMNA (0.39) LMNALTA4HMAOAPTGS1CA4
SCHEMBL432208 0.78 CA4 (0.42) LMNALTA4HMAOAPTGS1CA4
SCHEMBL329175 0.78 CA4 (0.42) LMNALTA4HMAOAPTGS1CA4
SCHEMBL305460 0.78 SCN4A (0.37) LMNALTA4HMAOAPTGS1CA4
SCHEMBL28823173 0.78 LTA4H (0.35) LMNALTA4HMAOAPTGS1CA4
SCHEMBL3680660 0.78 LTA4H (0.35) LMNALTA4HMAOAPTGS1CA4
SCHEMBL26661020 0.78 LTA4H (0.35) LMNALTA4HMAOAPTGS1CA4
SCHEMBL8416691 0.76 ALDH1A1 (0.37) LMNALTA4HMAOACA4TSHR
SCHEMBL19816599 0.76 LTA4H (0.38) LMNALTA4HMAOAPTGS1CA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 283 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024190380-A1 SILICON-CONTAINING RESIN COMPOSITION PURIFIED PRODUCT MANUFACTURING METHOD, PATTERN FORMATION METHOD, AND SILICON-CONTAINING RESIN COMPOSITION PURIFIED PRODUCT 東京応化工業株式会社 2024-09-19 WO disclosed
US-20240262964-A1 METHOD OF PRODUCING SILICONE POLYMER TORAY FINE CHEMICALS CO., LTD. (JP) 2024-08-08 US disclosed
EP-4361201-A1 METHOD FOR PRODUCING SILICONE POLYMER Toray Fine Chemicals Co., Ltd. (JP) 2024-05-01 EP disclosed
CN-117413005-A Process for producing siloxane polymer 东丽精细化工株式会社 2024-01-16 CN disclosed
US-20230167244-A1 METHOD OF PRODUCING SILICONE POLYMER TORAY FINE CHEMICALS CO., LTD. (JP) 2023-06-01 US disclosed
EP-4119596-A1 METHOD FOR PRODUCING SILICONE POLYMER Toray Fine Chemicals Co., Ltd. (JP) 2023-01-18 EP disclosed
WO-2022270336-A1 METHOD FOR PRODUCING SILICONE POLYMER 東レ・ファインケミカル株式会社 2022-12-29 WO disclosed
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed
US-6235101-B1 SILICON HYDROLYZATE, METAL CHELATE, ORGANIC SOLVENT AND BETA DIKETONE FOR FILMS JSR CORPORATION (JP) 2001-05-22 US disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed
EP-0921561-A2 Composition for film formation and film JSR Corporation (JP) 1999-06-09 EP disclosed