SCHEMBL4392561

SCHEMBL4392561

COc1ccc(S)cc1.O=S(=O)(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 1/20 0.41
PKM P14618 3/20 0.37
PDK1 Q15118 1/20 0.36
PDK2 Q15119 1/20 0.36
PDK3 Q15120 1/20 0.36
PDK4 Q16654 1/20 0.36
GAA P10253 3/20 0.36
CA1 P00915 2/20 0.36
CA2 P00918 2/20 0.36
MMP13 P45452 2/20 0.36
MMP1 P03956 1/20 0.36
MMP2 P08253 1/20 0.36
MMP9 P14780 1/20 0.36
MMP8 P22894 1/20 0.36
F2 P00734 2/20 0.36
PRSS1 P07477 2/20 0.36
PRSS2 P07478 2/20 0.36
PRSS3 P35030 2/20 0.36
CES2 O00748 1/20 0.35
CES1 P23141 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4399560 0.98 HSD11B1 (0.40) HSD11B1PKMPDK1PDK2PDK3
Trifluoromethanesulfonic Acid SCHEMBL3385544 0.84 HSD11B1 (0.44) HSD11B1PKMPDK1PDK2PDK3
SCHEMBL6743597 0.83 CA2 (0.36) GAACA1CA2MMP13MMP1
SCHEMBL29670948 0.81 CA2 (0.37) GAACA1CA2MMP13MMP1
SCHEMBL2482919 0.80 RORA (0.40) HSD11B1PDK1PDK2PDK3PDK4
Benzenethiol SCHEMBL29745974 0.79 CA2 (0.39) CA1CA2MMP13MMP1MMP2
SCHEMBL3126988 0.79 ENPP1 (0.41) LMNAMAPTHTTALDH1A1KMT2A
SCHEMBL3144479 0.78 ENPP1 (0.41) LMNAMAPTHTTALDH1A1KMT2A
SCHEMBL29206298 0.77 SRD5A2 (0.41) HSD11B1CA1CA2MMP13MMP1
SCHEMBL9966120 0.76 CA2 (0.35) CA1CA2CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1238972-B1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR CORP (JP) 2009-12-16 EP disclosed
EP-1631863-A2 PHOTORESIST COMPOSITION FOR DEEP UV AND IMAGING PROCESS THEREOF AZ Electronic Materials USA Corp. (US) 2006-03-08 EP disclosed
WO-2004102272-A2 PHOTORESIST COMPOSITION FOR DEEP UV AND IMAGING PROCESS THEREOF AZ ELECTRONIC MATERIALS USA CORP. (US) 2004-11-25 WO disclosed
US-20030235775-A1 Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds CLARIANT INTERNATIONAL LTD (CH) 2003-12-25 US disclosed
EP-1238972-A1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR Corporation (JP) 2002-09-11 EP disclosed