Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP2D6 | P10635 | 2/20 | 0.46 |
| ▸ | PSEN1 | P49768 | 1/20 | 0.45 |
| ▸ | PSEN2 | P49810 | 1/20 | 0.45 |
| ▸ | APH1B | Q8WW43 | 1/20 | 0.45 |
| ▸ | NCSTN | Q92542 | 1/20 | 0.45 |
| ▸ | APH1A | Q96BI3 | 1/20 | 0.45 |
| ▸ | PSENEN | Q9NZ42 | 1/20 | 0.45 |
| ▸ | CA1 | P00915 | 1/20 | 0.41 |
| ▸ | CA2 | P00918 | 1/20 | 0.41 |
| ▸ | CA4 | P22748 | 1/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.40 |
| ▸ | CYP2C19 | P33261 | 4/20 | 0.35 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.35 |
| ▸ | CASP1 | P29466 | 1/20 | 0.35 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.30 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.30 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | MAPT | P10636 | 1/20 | 0.30 |
| ▸ | THRB | P10828 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10881612 | 0.77 | PSEN1 (0.44) | CYP2D6PSEN1PSEN2APH1BNCSTN | |
| SCHEMBL10881465 | 0.77 | PSEN1 (0.44) | CYP2D6PSEN1PSEN2APH1BNCSTN | |
| SCHEMBL20929249 | 0.74 | CYP2D6 (0.38) | CYP2D6PSEN1PSEN2APH1BNCSTN | |
| SCHEMBL443474 | 0.72 | — | — | |
| SCHEMBL12450166 | 0.72 | — | — | |
| SCHEMBL9445782 | 0.72 | — | — | |
| SCHEMBL12522127 | 0.72 | — | — | |
| SCHEMBL17939427 | 0.72 | — | — | |
| SCHEMBL16554048 | 0.72 | — | — | |
| SCHEMBL16554317 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8298746-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-10-30 | — | — | US | disclosed |
| US-8232039-B2 | Polymer and resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-07-31 | — | — | US | disclosed |
| US-8173352-B2 | Resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-05-08 | — | — | US | disclosed |
| US-8158329-B2 | Compound and chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-04-17 | — | — | US | disclosed |
| US-8124803-B2 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-8062830-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8057983-B2 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-15 | — | — | US | disclosed |
| US-8048612-B2 | Polymer and chemically amplified resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-01 | — | — | US | disclosed |
| US-8003296-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-23 | — | — | US | disclosed |
| US-7998656-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-16 | — | — | US | disclosed |
| US-20080248423-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080248423-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080220369-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080213695-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-04 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080176168-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-24 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
| US-20080081293-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080081293-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-04-03 | — | — | US | disclosed |
| EP-1873143-A1 | A salt suitable for an acid generator and a chemically amplified resist composition containing the same | Sumitomo Chemical Company, Limited (JP) | 2008-01-02 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080081293-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | HCN3, HCN1, NHERF1 | CYP2D6 2059/4885PSEN1 3175/4885PSEN2 4081/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.