SCHEMBL441525

SCHEMBL441525

c1ccc(Oc2cccc3c2ccc2ccccc23)cc1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HPRT1 P00492 3/20 0.54
KCNA3 P22001 1/20 0.47
TSHR P16473 2/20 0.46
ALDH1A1 P00352 2/20 0.46
HSD17B10 Q99714 2/20 0.46
CYP2A6 P11509 1/20 0.46
TDP1 Q9NUW8 1/20 0.46
GAA P10253 1/20 0.46
RCE1 Q9Y256 1/20 0.46
KMT2A Q03164 2/20 0.44
MEN1 O00255 1/20 0.44
MITF O75030 1/20 0.44
LMNA P02545 1/20 0.44
POLB P06746 1/20 0.44
L3MBTL1 Q9Y468 1/20 0.44
MAPT P10636 2/20 0.41
KDM4E B2RXH2 1/20 0.41
GLA P06280 1/20 0.41
LTA4H P09960 1/20 0.41
PAX8 Q06710 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28188294 0.94 HPRT1 (0.56) HPRT1KCNA3TSHRALDH1A1HSD17B10
SCHEMBL446558 0.88 HPRT1 (0.64) HPRT1TSHRALDH1A1HSD17B10CYP2A6
SCHEMBL29860318 0.88 KCNA3 (0.58) KCNA3TSHRALDH1A1HSD17B10TDP1
SCHEMBL441860 0.88 KCNA3 (0.58) KCNA3TSHRALDH1A1HSD17B10TDP1
Water SCHEMBL27705785 0.86 KCNA3 (0.56) KCNA3TSHRALDH1A1HSD17B10TDP1
SCHEMBL441360 0.86 HPRT1 (0.61) HPRT1KCNA3TSHRALDH1A1HSD17B10
SCHEMBL9393621 0.85 TSHR (0.55) KCNA3TSHRALDH1A1GAAKMT2A
SCHEMBL29986145 0.85 ALDH1A1 (0.57) HPRT1KCNA3TSHRALDH1A1HSD17B10
SCHEMBL2078871 0.81 L3MBTL1 (0.54) KCNA3TSHRALDH1A1HSD17B10CYP2A6
SCHEMBL10597815 0.81 KCNA3 (0.51) KCNA3TSHRALDH1A1TDP1GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8846846-B2 Naphthalene derivative, resist bottom layer material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-30 US claimed
US-20120064725-A1 NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-15 US claimed
US-9045587-B2 Naphthalene derivative, resist bottom layer material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-02 US disclosed
US-20140363768-A1 NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-11 US disclosed
US-8846846-B2 Naphthalene derivative, resist bottom layer material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-30 US disclosed
US-20120064725-A1 NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-15 US disclosed