SCHEMBL447938

SCHEMBL447938

O=[Sb]([O-])([O-])[O-].c1ccc([I+]c2ccccc2)cc1.c1ccc([I+]c2ccccc2)cc1.c1ccc([I+]c2ccccc2)cc1

nearest known ligand 0.32

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.32
CYP3A4 P08684 2/20 0.32
MAPT P10636 2/20 0.32
TP53 P04637 1/20 0.32
CYP1A2 P05177 1/20 0.32
MAPK1 P28482 1/20 0.32
HTR2B P41595 1/20 0.32
EPHX1 P07099 1/20 0.31
ALDH1A1 P00352 1/20 0.31
TDP1 Q9NUW8 1/20 0.30
GAA P10253 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1134080 0.90 LMNA (0.30) LMNACYP3A4MAPTTP53CYP1A2
SCHEMBL9685437 0.90 LMNA (0.30) LMNACYP3A4MAPTTP53CYP1A2
SCHEMBL7081560 0.90 LMNA (0.30) LMNACYP3A4MAPTTP53CYP1A2
SCHEMBL31314887 0.83 MAPT (0.32) LMNACYP3A4MAPTTP53CYP1A2
SCHEMBL36560 0.82 ALDH1A1 (0.40) LMNACYP3A4CYP1A2ALDH1A1TDP1
SCHEMBL30561568 0.79 CYP3A4 (0.35) LMNACYP3A4MAPTTP53CYP1A2
Fluoride Ion SCHEMBL25292299 0.78 ALDH1A1 (0.39) LMNACYP3A4CYP1A2ALDH1A1TDP1
SCHEMBL12762155 0.78 ALDH1A1 (0.38) LMNACYP3A4MAPTCYP1A2ALDH1A1
Water SCHEMBL105507 0.78 ALDH1A1 (0.38) LMNACYP3A4CYP1A2ALDH1A1TDP1
SCHEMBL2058395 0.78 ALDH1A1 (0.38) LMNACYP3A4CYP1A2ALDH1A1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 245 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250377591-A1 PHOTORESIST COMPOSITION AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO LTD (KR) 2025-12-11 US claimed
CN-120072405-A Single-component low-temperature curing silver paste stored at normal temperature and preparation method thereof 珠海格力新材料有限公司 2025-05-30 CN claimed
CN-119923600-A Chemically amplified positive resist composition for improving pattern profile and enhancing adhesion YC化学制品株式会社 2025-05-02 CN claimed
CN-119752373-A Thermosetting electrolyte-resistant adhesive, and preparation method and application thereof 拓迪化学(上海)股份有限公司 2025-04-04 CN claimed
CN-112313580-B Chemical amplification type positive photoresist composition for improving pattern profile 荣昌化学制品株式会社 2024-11-22 CN claimed
CN-118818901-A KrF negative photoresist and preparation method and patterning forming method thereof 厦门恒坤新材料科技股份有限公司 2024-10-22 CN claimed
CN-118222229-A Anisotropic conductive adhesive and curing method thereof 深圳先进电子材料国际创新研究院 2024-06-21 CN claimed
CN-117795418-A Chemically amplified positive resist composition for pattern profile and resolution improvement YC化学制品株式会社 2024-03-29 CN claimed
US-11906900-B2 Chemically amplified positive photoresist composition for improving pattern profile YOUNG CHANG CHEMICAL CO., LTD (KR) 2024-02-20 US claimed
WO-2023027360-A1 CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR IMPROVING PATTERN PROFILE AND RESOLUTION 영창케미칼 주식회사 2023-03-02 WO claimed
US-20020155379-A1 Photosensitive monomer, photosensitive polymer and chemically amplified resist composition comprising lactone group having acid-labile protecting group SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-10-24 US claimed
US-20020146642-A1 Photosensitive polymers and resist compositions comprising the photosensitive polymers SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-10-10 US claimed
US-20020042016-A1 Resist composition comprising photosensitive polymer having loctone in its backbone SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-04-11 US claimed
US-6300036-B1 COPOLYMER OF MALEIC ANHYDRIDE AND 2-NORBORNENE-5-METHANOL DERIVATIVE; ACCURATE PATTERNS WHEN EXPOSED TO ARGON FLUORIDE LASERS; DRY ETCHING RESISTANCE SAMSUNG ELECTRONICS CO., LTD. (KR) 2001-10-09 US claimed
US-20010024763-A1 Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2001-09-27 US claimed
US-6287747-B1 CONTAINING ORGANOOXYGEN COMPOUNDS AND UNSATURATED COMPOUNDS SAMSUNG ELECTRONICS CO., LTD. (KR) 2001-09-11 US claimed
US-6143466-A Chemically amplified photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2000-11-07 US claimed
US-6143465-A Photosensitive polymer having cyclic backbone and resist composition comprising same SAMSUNG ELECTRONICS CO., LTD. (KR) 2000-11-07 US claimed
US-6080524-A Photosensitive polymer having cyclic backbone and resist composition comprising the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2000-06-27 US claimed
EP-0921439-A1 Photosensitive polymer and chemically amplified resist composition using the same Samsung Electronics Co., Ltd. (KR) 1999-06-09 EP claimed