⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6863599 | 0.86 | CA2 (0.33) | — | |
| SCHEMBL6254118 | 0.69 | CYP2D6 (0.35) | — | |
| Noreximide SCHEMBL4259008 | 0.64 | ALDH1A1 (0.43) | — | |
| Noreximide SCHEMBL28566634 | 0.64 | ALDH1A1 (0.43) | — | |
| SCHEMBL9705137 | 0.63 | CYP2D6 (0.37) | — | |
| Trifluoromethanesulfonic Acid SCHEMBL218096 | 0.60 | CRBN (0.52) | — | |
| SCHEMBL22946662 | 0.59 | CYP2D6 (0.33) | — | |
| Trifluoromethanesulfonic Acid SCHEMBL7641674 | 0.59 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL27994269 | 0.58 | TSHR (0.40) | — | |
| Trifluoromethanesulfonic Acid SCHEMBL22283860 | 0.57 | LMNA (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 102 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7045267-B2 | Resist composition comprising photosensitive polymer having lactone in its backbone | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-05-16 | — | — | US | claimed |
| US-6962768-B2 | Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-11-08 | — | — | US | claimed |
| US-6897005-B2 | Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same | SAMSUNG ELECTRONICS, CO., LTD. (KR) | 2005-05-24 | — | — | US | claimed |
| US-6800418-B2 | ALLOWING DEVELOPMENT WITH CONVENTIONAL DEVELOPERS AND HAVING A HIGH TRANSMITTANCE AT A F2 EXCIMER LASER WAVELENGTH OF 157 NM, HYDROPHILICITY, ADHESION TO UNDERLAYER | SAMSUNG ELECTRONICS (KR) | 2004-10-05 | — | — | US | claimed |
| US-6787287-B2 | LITHOGRAPHY CHARACTERISTICS WHEN USED AS PHOTORESIST MATERIAL | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-09-07 | — | — | US | claimed |
| US-20040170919-A1 | Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same | SAMSUNG ELECTRONICS CO. LTD. (KR) | 2004-09-02 | — | — | US | claimed |
| US-20040137363-A1 | Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same | CHOI SANG-JUN (KR) | 2004-07-15 | — | — | US | claimed |
| US-6713228-B2 | UNSATURATED ETHER CONTAINING POLYMER | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-03-30 | — | — | US | claimed |
| US-6696217-B2 | ACRYLATED ESTER POLYMER | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-02-24 | — | — | US | claimed |
| US-20040018442-A1 | Resist composition comprising photosensitive polymer having lactone in its backbone | YOON KWANG-SUB (KR) | 2004-01-29 | — | — | US | claimed |
| US-6627382-B2 | Includes perfluoro-2,2-dimethy-1,3-dioxole derivatives and vinyl derivatives; for F2 excimer laser | SAMSUNG ELECTRONICS, CO., LTD. (KR) | 2003-09-30 | — | — | US | claimed |
| US-20030157430-A1 | Fluorine-containing photosensitive polymer having hydrate structure and resist composition comprising the same | SAMSUNG ELECTRONICS CO., LTD. | 2003-08-21 | — | — | US | claimed |
| US-6596459-B1 | Photosensitive polymer having a main chain consisting of only norbornene-type alicyclic units | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2003-07-22 | — | — | US | claimed |
| US-6537727-B2 | Improved dry etching resistance, adhesiveness to underlying material layers, line edge roughness of line patterns, contrast characteristics | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2003-03-25 | — | — | US | claimed |
| US-20020177067-A1 | Fluoro-containing photosensitive polymer and photoresist composition containing the same | SAMSUNG ELECTRONICS CO., LTD. | 2002-11-28 | — | — | US | claimed |
| US-20020160303-A1 | Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-10-31 | — | — | US | claimed |
| US-20020155379-A1 | Photosensitive monomer, photosensitive polymer and chemically amplified resist composition comprising lactone group having acid-labile protecting group | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-10-24 | — | — | US | claimed |
| US-20020146642-A1 | Photosensitive polymers and resist compositions comprising the photosensitive polymers | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-10-10 | — | — | US | claimed |
| US-20020042016-A1 | Resist composition comprising photosensitive polymer having loctone in its backbone | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-04-11 | — | — | US | claimed |
| US-20010024763-A1 | Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2001-09-27 | — | — | US | claimed |