SCHEMBL44854

SCHEMBL44854

CC(C)(C)OCc1ccco1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 7/20 0.52
GAA P10253 2/20 0.46
MAPT P10636 5/20 0.41
MEN1 O00255 2/20 0.41
KMT2A Q03164 2/20 0.41
KDM4E B2RXH2 1/20 0.41
CYP2D6 P10635 1/20 0.40
POLB P06746 3/20 0.39
RIPK1 Q13546 1/20 0.39
SLC1A3 P43003 1/20 0.39
SLC1A2 P43004 1/20 0.39
SLC1A1 P43005 1/20 0.39
CYP3A4 P08684 1/20 0.38
ALOX15 P16050 1/20 0.38
MAPK1 P28482 3/20 0.37
TDP1 Q9NUW8 2/20 0.37
HTT P42858 2/20 0.37
TP53 P04637 1/20 0.37
NPSR1 Q6W5P4 1/20 0.37
LMNA P02545 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23700714 0.82 ALDH1A1 (0.47) ALDH1A1GAAMAPTMEN1KMT2A
SCHEMBL28301847 0.79 ALDH1A1 (0.47) ALDH1A1GAAMAPTMEN1KMT2A
SCHEMBL11749020 0.77 ALDH1A1 (0.57) ALDH1A1GAAMAPTMEN1KMT2A
SCHEMBL4837779 0.76 ALDH1A1 (0.49) ALDH1A1GAAMAPTMEN1KMT2A
SCHEMBL872796 0.76
SCHEMBL891457 0.75 ALDH1A1 (0.55) ALDH1A1GAAMAPTMEN1KMT2A
SCHEMBL1262629 0.75 ALDH1A1 (0.47) ALDH1A1GAAMAPTMEN1KMT2A
SCHEMBL20917401 0.75 KIF11 (0.44) ALDH1A1GAAMAPTMEN1KMT2A
SCHEMBL28521894 0.74 ALDH1A1 (0.55) ALDH1A1GAAMAPTCYP2D6POLB
SCHEMBL28264711 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 216 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107667415-B Conformal peelable carbon films for advanced patterning with reduced line edge roughness 应用材料公司 2021-10-26 CN claimed
US-9659771-B2 Conformal strippable carbon film for line-edge-roughness reduction for advanced patterning APPLIED MATERIALS, INC. (US) 2017-05-23 US claimed
US-20160365248-A1 CONFORMAL STRIPPABLE CARBON FILM FOR LINE-EDGE-ROUGHNESS REDUCTION FOR ADVANCED PATTERNING APPLIED MATERIALS, INC. 2016-12-15 US claimed
WO-2011146212-A2 ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM APPLIED MATERIALS, INC. (US) 2011-11-24 WO claimed
US-20110287633-A1 ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM APPLIED MATERIALS, INC. (US) 2011-11-24 US claimed
CN-101407909-A Methods for high temperature deposition of an amorphous carbon layer APPLIED MATERIALS INC (US) 2009-04-15 CN claimed
US-20090093128-A1 METHODS FOR HIGH TEMPERATURE DEPOSITION OF AN AMORPHOUS CARBON LAYER APPLIED MATERIALS, INC. 2009-04-09 US claimed
US-20070275569-A1 METHODS AND APPARATUS FOR E-BEAM TREATMENT USED TO FABRICATE INTEGRATED CIRCUIT DEVICES APPLIED MATERIALS, INC. 2007-11-29 US claimed
US-6914014-B2 Method for curing low dielectric constant film using direct current bias APPLIED MATERIALS, INC. (US) 2005-07-05 US claimed
US-6797643-B2 Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power APPLIED MATERIALS INC. 2004-09-28 US claimed
WO-2004063422-A2 METHOD FOR CURING LOW DIELECTRIC CONSTANT FILM USING DIRECT CURRENT BIAS APPLIED MATERIALS, INC. (US) 2004-07-29 WO claimed
US-20040137758-A1 METHOD FOR CURING LOW DIELECTRIC CONSTANT FILM USING DIRECT CURRENT BIAS APPLIED MATERIALS,INC. 2004-07-15 US claimed
US-20040101632-A1 Method for curing low dielectric constant film by electron beam APPLIED MATERIALS, INC. 2004-05-27 US claimed
US-20040082193-A1 PLASMA ENHANCED CVD LOW K CARBON-DOPED SILICON OXIDE FILM DEPOSITION USING VHF-RF POWER APPLIED MATERIALS, INC 2004-04-29 US claimed
US-20030232495-A1 Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices APPLIED MATERIALS, INC. 2003-12-18 US claimed
US-20030194495-A1 Crosslink cyclo-siloxane compound with linear bridging group to form ultra low k dielectric APPLIED MATERIALS, INC. 2003-10-16 US claimed
US-20030194496-A1 Methods for depositing dielectric material APPLIED MATERIALS, INC. 2003-10-16 US claimed
US-20030186000-A1 Hardness improvement of silicon carboxy films APPLIED MATERIALS, INC. 2003-10-02 US claimed
US-12564021-B2 Method of processing a substrate APPLIED MATERIALS, INC. (US) 2026-02-24 US disclosed
US-20030194495-A1 Crosslink cyclo-siloxane compound with linear bridging group to form ultra low k dielectric APPLIED MATERIALS, INC. 2003-10-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12564021-B2 Method of processing a substrate BRSK1, PIEZO1, MYB ALDH1A1 4704/4885GAA 4273/4885MAPT 3562/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.