SCHEMBL452373

SCHEMBL452373

CCCCCCCCCCCCc1ccccc1S(=O)(=O)[O-].c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.45

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
LIPG Q9Y5X9 1/20 0.45
BID P55957 3/20 0.40
MCL1 Q07820 3/20 0.40
BCL2L1 Q07817 2/20 0.40
BAK1 Q16611 2/20 0.40
KAT8 Q9H7Z6 2/20 0.40
PPARG P37231 2/20 0.40
PPARA Q07869 2/20 0.40
EP300 Q09472 1/20 0.40
KAT2A Q92830 1/20 0.40
KAT2B Q92831 1/20 0.40
KAT5 Q92993 1/20 0.40
SAE1 Q9UBE0 1/20 0.40
NR1H2 P55055 1/20 0.39
NR1H3 Q13133 1/20 0.39
CYSLTR2 Q9NS75 4/20 0.39
CYSLTR1 Q9Y271 4/20 0.39
KCNH2 Q12809 4/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3188960 0.94 LIPG (0.40) LIPGBIDMCL1BCL2L1BAK1
SCHEMBL3192187 0.93 LIPG (0.40) LIPGBIDMCL1BCL2L1BAK1
SCHEMBL2896010 0.93 LIPG (0.43) LIPGBIDMCL1BCL2L1BAK1
SCHEMBL450362 0.92 LIPG (0.39) LIPGBIDMCL1BCL2L1BAK1
SCHEMBL3190576 0.91 MMP2 (0.41) LIPGPPARGPPARA
SCHEMBL2901078 0.91 LIPG (0.38) LIPGBIDMCL1BCL2L1BAK1
SCHEMBL16895142 0.90 LIPG (0.54) LIPGBIDMCL1BCL2L1BAK1
Potassium Ion SCHEMBL23749193 0.88 LIPG (0.53) LIPGBIDMCL1BCL2L1BAK1
Lithium Ion SCHEMBL21822098 0.88 LIPG (0.53) LIPGBIDMCL1BCL2L1BAK1
Lithium Ion SCHEMBL21822091 0.88 LIPG (0.53) LIPGBIDMCL1BCL2L1BAK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 186 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6200480-B1 CONTACTING IMPURE SOLUTION OF PHOTOACID GENERATING COMPOUND CONTAINING TRACE AMOUNTS OF ACIDIC IMPURITIES WITH ANIONIC ION EXCHANGE RESIN CONTAINING PENDENT POLYAMINE FUNCTIONAL GROUPS FOR SUFFICIENT AMOUNT OF TIME TO REMOVE SAID IMPURITIES ARCH SPECIALTY CHEMICALS, INC. 2001-03-13 US claimed
EP-1054715-A1 METHOD OF PURIFYING PHOTOACID GENERATORS FOR USE IN PHOTORESIST COMPOSITIONS Olin Microelectronic Chemicals, Inc. (US) 2000-11-29 EP claimed
WO-1999036151-A1 METHOD OF PURIFYING PHOTOACID GENERATORS FOR USE IN PHOTORESIST COMPOSITIONS OLIN MICROELECTRONIC CHEMICALS, INC. (US) 1999-07-22 WO claimed
CN-120077771-A Curable composition for organic EL element, cured product for organic EL element, method for producing cured product for organic EL element, and polymer JSR株式会社 2025-05-30 CN disclosed
WO-2024101411-A1 CURABLE COMPOSITION FOR ORGANIC EL ELEMENTS, CURED PRODUCT FOR ORGANIC EL ELEMENTS AND METHOD FOR PRODUCING SAME, ORGANIC EL ELEMENT, AND POLYMER JSR株式会社 2024-05-16 WO disclosed
US-11970557-B2 Polymer containing photoacid generator LG CHEM, LTD. (KR) 2024-04-30 US disclosed
EP-3010943-B1 CURABLE COMPOSITION, FILM, AND METHOD OF PRODUCING FILM CANON KK (JP) 2024-04-03 EP disclosed
US-11681227-B2 Enhanced EUV photoresist materials, formulations and processes IRRESISTIBLE MATERIALS LTD (GB) 2023-06-20 US disclosed
US-11592605-B2 Color developing structure having concave-convex layer, method for producing such structure, and display TOPPAN PRINTING CO., LTD. (JP) 2023-02-28 US disclosed
CN-114975098-A Nanoimprint liquid material, method for producing pattern of cured product, and method for producing circuit board 佳能株式会社 2022-08-30 CN disclosed
CN-107251193-B Nanoimprint liquid material, method for producing pattern of cured product, method for producing optical component, and method for producing circuit board 佳能株式会社 2022-06-21 CN disclosed
EP-1054715-A1 METHOD OF PURIFYING PHOTOACID GENERATORS FOR USE IN PHOTORESIST COMPOSITIONS Olin Microelectronic Chemicals, Inc. (US) 2000-11-29 EP disclosed
US-6136500-A CONTAINS A PHOTOACID GENERATOR COMPRISING A COMBINATION OF A COMPOUND THAT GENERATES A CARBOXYLIC ACID UPON EXPOSURE TO RADIATION AND ANOTHER COMPOUND THAT GENERATES ANOTHER ACID UPON EXPOSURE TO RADIATION JSR CORPORATION (JP) 2000-10-24 US disclosed
EP-1035436-A1 Resist pattern formation method JSR Corporation (JP) 2000-09-13 EP disclosed
EP-1011029-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2000-06-21 EP disclosed
US-6037098-A AROMATIC SULFONIC ACID GENERATED FROM A SULFONIUM COMPOUND TO ENHANCE RESIN ALKALINE SOLUBILITY; REDUCED DIFFUSIBILITY OF ACID IN FILM, I.E., UNIFORM LINE WIDTH; HIGH PHOTOSENSITIVITY AND PHOTODECOMPOSITION EFFICIENCY FUJI PHOTO FILM CO., LTD. (JP) 2000-03-14 US disclosed
WO-1999036151-A1 METHOD OF PURIFYING PHOTOACID GENERATORS FOR USE IN PHOTORESIST COMPOSITIONS OLIN MICROELECTRONIC CHEMICALS, INC. (US) 1999-07-22 WO disclosed
EP-0898201-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-02-24 EP disclosed
EP-0869393-A1 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 1998-10-07 EP disclosed
EP-0795786-A2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 1997-09-17 EP disclosed