SCHEMBL4578713

SCHEMBL4578713

O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.Oc1ccc([S+](c2ccc(O)cc2)c2ccc(O)cc2)cc1

nearest known ligand 0.38

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
CA2 P00918 15/20 0.38
CA1 P00915 14/20 0.38
MMP1 P03956 2/20 0.38
MMP2 P08253 2/20 0.38
MMP9 P14780 2/20 0.38
MMP8 P22894 2/20 0.38
MMP13 P45452 2/20 0.38
LMNA P02545 1/20 0.33
CA12 O43570 1/20 0.32
CA9 Q16790 1/20 0.32
ENPP2 Q13822 1/20 0.32
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32
KCNH2 Q12809 1/20 0.32
F2 P00734 1/20 0.32
PRSS1 P07477 1/20 0.32
PRSS2 P07478 1/20 0.32
PRSS3 P35030 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5856417 0.98 CA2 (0.40) CA2CA1MMP1MMP2MMP9
SCHEMBL548129 0.94 CA1 (0.34) CA2CA1MMP1MMP2MMP9
SCHEMBL3141380 0.94 CA1 (0.34) CA2CA1MMP1MMP2MMP9
SCHEMBL3136035 0.93 CA2 (0.36) CA2CA1MMP1MMP2MMP9
SCHEMBL1802709 0.93 CA2 (0.36) CA2CA1MMP1MMP2MMP9
SCHEMBL5124094 0.90 LMNA (0.42) CA2CA1MMP1MMP2MMP9
SCHEMBL3798074 0.89 ESR1 (0.36) CA2CA1MMP2LMNACA12
SCHEMBL5856324 0.88 CA1 (0.36) CA2CA1MMP1MMP2MMP9
SCHEMBL5857309 0.86 CA2 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL1802633 0.85 CA2 (0.36) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122043858-A EUV patterned resist formation method 亚历克斯·P·G·罗宾逊 2026-05-15 CN disclosed
US-11681227-B2 Enhanced EUV photoresist materials, formulations and processes IRRESISTIBLE MATERIALS LTD (GB) 2023-06-20 US disclosed
US-20200272050-A1 Enhanced EUV Photoresist Materials, Formulations and Processes IRRESISTIBLE MATERIALS, LTD (GB) 2020-08-27 US disclosed
US-10095112-B2 Multiple trigger photoresist compositions and methods IRRESISTIBLE MATERIALS LTD (GB) 2018-10-09 US disclosed
US-20180246408-A1 MULTIPLE TRIGGER PHOTORESIST COMPOSITIONS AND METHODS IRRESISTIBLE MATERIALS, LTD (GB) 2018-08-30 US disclosed
US-9519215-B2 Composition of matter and molecular resist made therefrom IRRESISTIBLE MATERIALS, LTD (GB) 2016-12-13 US disclosed
US-20160246173-A1 Composition of Matter and Molecular Resist Made Therefrom IRRESISTIBLE MATERIALS LTD (GB) 2016-08-25 US disclosed
US-9383646-B2 Two-step photoresist compositions and methods IRRESISTIBLE MATERIALS LTD (GB) 2016-07-05 US disclosed
US-9323149-B2 Methanofullerenes IRRESISTIBLE MATERIALS LTD (GB) 2016-04-26 US disclosed
US-9256126-B2 Methanofullerenes IRRESISTIBLE MATERIALS LTD (GB) 2016-02-09 US disclosed
US-20140255849-A1 Methanofullerenes IRRESISTIBLE MATERIALS LTD (GB) 2014-09-11 US disclosed
WO-2014078097-A1 METHANOFULLERENES ROBINSON ALEX PHILIP GRAHAM (GB) 2014-05-22 WO disclosed
US-20140134843-A1 Methanofullerenes IRRESISTIBLE MATERIALS LTD (GB) 2014-05-15 US disclosed
US-7374860-B2 Positive resist composition and pattern forming method using the same FUJI FILM CORPORATION (JP) 2008-05-20 US disclosed
US-20060216635-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2006-09-28 US disclosed
EP-1705518-A2 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2006-09-27 EP disclosed
US-7078148-B2 Photoresist with improved sensitivity and resolution to deep ultraviolet rays/excimer lasers; semiconductors; integrated circuits JSR CORPORATION (JP) 2006-07-18 US disclosed
US-20040072094-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2004-04-15 US disclosed
US-6358665-B1 ONIUM SALT PRECURSOR FOR GENERATING FLUOROALKYLSULFONATE CLARIANT INTERNATIONAL LTD. (CH) 2002-03-19 US disclosed
EP-1033624-A1 RADIATION-SENSITIVE COMPOSITION OF CHEMICAL AMPLIFICATION TYPE Clariant International Ltd. (CH) 2000-09-06 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10095112-B2 Multiple trigger photoresist compositions and methods ERCC4, ERCC2, APEX1 CA2 616/4885CA1 2590/4885MMP1 2965/4885
US-20140134843-A1 Methanofullerenes WASF2, ERCC4, TUFM CA2 4656/4885CA1 4687/4885MMP1 4595/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.