Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 12/20 | 0.34 |
| ▸ | CA2 | P00918 | 12/20 | 0.34 |
| ▸ | MMP1 | P03956 | 5/20 | 0.34 |
| ▸ | MMP2 | P08253 | 5/20 | 0.34 |
| ▸ | MMP9 | P14780 | 5/20 | 0.34 |
| ▸ | MMP8 | P22894 | 5/20 | 0.34 |
| ▸ | MMP13 | P45452 | 5/20 | 0.34 |
| ▸ | ESR1 | P03372 | 3/20 | 0.33 |
| ▸ | ESR2 | Q92731 | 2/20 | 0.33 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.32 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3141380 | 1.00 | CA1 (0.34) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL3136035 | 0.99 | CA2 (0.36) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL1802709 | 0.99 | CA2 (0.36) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL3798074 | 0.96 | ESR1 (0.36) | CA1CA2MMP2ESR1ESR2 | |
| SCHEMBL4578713 | 0.94 | CA2 (0.38) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL5856417 | 0.93 | CA2 (0.40) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL6117378 | 0.93 | CA2 (0.37) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL51399 | 0.91 | CA2 (0.38) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL1482705 | 0.91 | CA2 (0.38) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL60437 | 0.90 | CA2 (0.39) | CA1CA2MMP1MMP2MMP9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 236 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2026100410-A1 | IODINE-CONTAINING POLYMERIZABLE COMPOUND AND IODINE-CONTAINING POLYMER | 三菱瓦斯化学株式会社 | 2026-05-15 | — | — | WO | disclosed |
| US-20250362597-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| CN-119452307-A | Resist auxiliary film composition and pattern forming method using the same | 三菱瓦斯化学株式会社 | 2025-02-14 | — | — | CN | disclosed |
| WO-2024014329-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20230096312-A1 | RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-03-30 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| WO-2023008354-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2023-02-02 | — | — | WO | disclosed |
| US-6348297-B1 | COMPOSITION COMPRISING ACID GENERATOR COMPRISING ALIPHATIC SULFONIUM SALT, TRIPHENYLSULFONIUM OR DIPHENYLIODONIUM SALT,RESIN HAVING ACID-LABILE GROUP WHICH IS INSOLUBLE IN ALKALI BUT BECOMES SOLUBLE BY ACTION OF ACID | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2002-02-19 | — | — | US | disclosed |
| US-20020015913-A1 | Chemical amplifying type positive resist composition and sulfonium salt | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2002-02-07 | — | — | US | disclosed |
| US-20020006582-A1 | Chemical amplification type positive resist compositions and sulfonium salts | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2002-01-17 | — | — | US | disclosed |
| EP-1167349-A1 | Chemical amplifying type positive resist composition and sulfonium salt | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2002-01-02 | — | — | EP | disclosed |
| EP-1154321-A1 | Chemical amplification type positive resist compositions and sulfonium salts | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2001-11-14 | — | — | EP | disclosed |
| US-20010006758-A1 | Negative radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-07-05 | — | — | US | disclosed |
| EP-1111465-A1 | Negative radiation-sensitive resin composition | JSR Corporation (JP) | 2001-06-27 | — | — | EP | disclosed |
| EP-1041442-A1 | Chemical amplification type positive resist | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2000-10-04 | — | — | EP | disclosed |
| EP-1035436-A1 | Resist pattern formation method | JSR Corporation (JP) | 2000-09-13 | — | — | EP | disclosed |
| EP-1020767-A1 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2000-07-19 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | CA1 1120/4885CA2 3332/4885MMP1 2081/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CA1 161/4885CA2 1466/4885MMP1 3548/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.