SCHEMBL4592667

SCHEMBL4592667

FC(F)(F)c1cccc([S+](c2ccccc2)c2cccc(C(F)(F)F)c2)c1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.54
ALDH1A1 P00352 2/20 0.54
MAPK1 P28482 1/20 0.48
MEN1 O00255 3/20 0.44
KMT2A Q03164 3/20 0.44
MAPT P10636 2/20 0.44
RAB9A P51151 2/20 0.44
HTT P42858 1/20 0.44
IDH2 P48735 1/20 0.44
CES2 O00748 1/20 0.44
MGLL Q99685 1/20 0.44
IDO1 P14902 1/20 0.43
TDO2 P48775 1/20 0.43
KIF11 P52732 2/20 0.42
LMNA P02545 1/20 0.42
ACP3 P15309 1/20 0.42
TAAR1 Q96RJ0 1/20 0.41
NPC1 O15118 1/20 0.41
SMN1; SMN2 Q16637 1/20 0.41
SRD5A2 P31213 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6384184 1.00 TSHR (0.54) TSHRALDH1A1MAPK1MEN1KMT2A
SCHEMBL5404369 0.93 TSHR (0.56) TSHRALDH1A1MAPK1MEN1KMT2A
SCHEMBL4661338 0.93 TSHR (0.54) TSHRALDH1A1MAPK1MAPTCES2
SCHEMBL6513245 0.86 TSHR (0.41) TSHRALDH1A1MAPK1MEN1KMT2A
Trifluoromethanesulfonic Acid SCHEMBL3253135 0.86 PTPN1 (0.46) TSHRALDH1A1MAPK1MEN1KMT2A
SCHEMBL6518157 0.85 TSHR (0.39) TSHRALDH1A1MAPK1MEN1KMT2A
SCHEMBL3203731 0.82 ALDH1A1 (0.59) TSHRALDH1A1MEN1KMT2AMAPT
SCHEMBL244792 0.82 ALDH1A1 (0.59) TSHRALDH1A1MEN1KMT2AMAPT
SCHEMBL246546 0.81 HDAC4 (0.41) TSHRALDH1A1MAPK1RAB9AKIF11
SCHEMBL242616 0.81 HDAC4 (0.41) TSHRALDH1A1MAPK1RAB9AKIF11

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 63 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11829067-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-28 US disclosed
US-11829067-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-28 US disclosed
US-20230367214-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230367214-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-9244347-B2 Resist composition, compound, polymeric compound and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-01-26 US disclosed
US-9045398-B2 Sulfonium salt and photo-acid generator SAN-APRO LIMITED (JP) 2015-06-02 US disclosed
US-20140357896-A1 SULFONIUM SALT AND PHOTO-ACID GENERATOR SAN-APRO LTD. (JP) 2014-12-04 US disclosed
US-20140356787-A1 RESIST COMPOSITION, COMPOUND, POLYMERIC COMPOUND AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2014-12-04 US disclosed
US-8110337-B2 Mixture of binder, an unsaturated compound and acid generator; lithography FUJIFILM CORPORATION (JP) 2012-02-07 US disclosed
US-7442485-B2 Lithographic process involving on press development FUJIFILM CORPORATION (JP) 2008-10-28 US disclosed
US-20070229637-A1 Ink set for ink-jet recording and ink-jet recording method FUJIFILM CORPORATION (JP) 2007-10-04 US disclosed
EP-1484177-B1 Lithographic process involving on press development FUJIFILM CORP (JP) 2007-08-29 EP disclosed
US-20050016402-A1 Lithographic process involving on press development FUJI PHOTO FILM CO., LTD. 2005-01-27 US disclosed
EP-1484177-A2 Lithographic process involving on press development FUJI PHOTO FILM CO., LTD. (JP) 2004-12-08 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20140357896-A1 SULFONIUM SALT AND PHOTO-ACID GENERATOR SLC7A5, SQOR, CYBA TSHR 3064/4885ALDH1A1 2290/4885MAPK1 438/4885
US-20240027903-A1 Resist Material And Patterning Process LBR, HNRNPU, EWSR1 TSHR 2364/4885ALDH1A1 4741/4885MAPK1 1639/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.