SCHEMBL4655839

SCHEMBL4655839

Cc1c(F)ccc(S(=O)(=O)[O-])c1F.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.30

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4654810 0.86 ALDH1A1 (0.36)
SCHEMBL6569273 0.84 LMNA (0.31)
SCHEMBL4654631 0.77 ALDH1A1 (0.32) TSHR
SCHEMBL2957834 0.77 KAT6A (0.38)
SCHEMBL2960432 0.76 POLB (0.38)
SCHEMBL5352910 0.75 KMT2A (0.31)
SCHEMBL2537983 0.75 HTR2A (0.38) TSHR
SCHEMBL2954163 0.74 ALDH1A1 (0.36) TSHR
SCHEMBL1703497 0.74 TDP1 (0.37)
SCHEMBL3204756 0.73 ALDH1A1 (0.35) TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20140147794-A1 METHOD OF FORMING PHOTORESIST PATTERN JSR CORPORATION (JP) 2014-05-29 US disclosed
US-20120171613-A1 UPPER LAYER FILM-FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN JSR CORPORATION (JP) 2012-07-05 US disclosed
EP-1640804-B1 Positive-tone radiation-sensitive resin composition JSR CORP (JP) 2008-11-19 EP disclosed
US-7335457-B2 Positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2008-02-26 US disclosed
US-7314701-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2008-01-01 US disclosed
US-7217492-B2 Onium salt compound and radiation-sensitive resin composition JSR CORPORATION (JP) 2007-05-15 US disclosed
US-7105269-B2 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-09-12 US disclosed
US-20060188812-A1 Phenolic hydroxyl group-containing copolymer and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-08-24 US disclosed
EP-1686424-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2006-08-02 EP disclosed
US-20060166138-A1 Radiation-sensitive resin composition JSR CORPORATION 2006-07-27 US disclosed
US-20060078821-A1 A caroboxyalkylanthracene based compound, a hydroxy or alkoxystyrene polymer, and a sulfonimide compound as photoacid generator; low sublimation properties and excellent compatibility with other components; exhibits optimum controllability of radiation transmittance; microfabrication JSR CORPORATION (JP) 2006-04-13 US disclosed
EP-1640804-A2 Positive-tone radiation-sensitive resin composition JSR Corporation (JP) 2006-03-29 EP disclosed
US-20050095527-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-05-05 US disclosed
US-20050053861-A1 Onium salt compound and radiation-sensitive resin composition JSR CORPORATION (JP) 2005-03-10 US disclosed
US-6623907-B2 Chemical amplified photoresist JSR CORPORATION (JP) 2003-09-23 US disclosed
US-20030157423-A1 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-08-21 US disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed