Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PLAU | P00749 | 1/20 | 0.53 |
| ▸ | HSD17B1 | P14061 | 10/20 | 0.50 |
| ▸ | HSD17B2 | P37059 | 10/20 | 0.50 |
| ▸ | ESR1 | P03372 | 2/20 | 0.50 |
| ▸ | ESR2 | Q92731 | 2/20 | 0.50 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.48 |
| ▸ | TRPA1 | O75762 | 1/20 | 0.42 |
| ▸ | GRIN2D | O15399 | 1/20 | 0.41 |
| ▸ | GRIN2A | Q12879 | 1/20 | 0.41 |
| ▸ | GRIN2B | Q13224 | 1/20 | 0.41 |
| ▸ | GRIN2C | Q14957 | 1/20 | 0.41 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.40 |
| ▸ | MAPKAPK2 | P49137 | 1/20 | 0.40 |
| ▸ | CTDSP1 | Q9GZU7 | 1/20 | 0.40 |
| ▸ | NQO2 | P16083 | 1/20 | 0.39 |
| ▸ | TP53 | P04637 | 1/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.39 |
| ▸ | MEN1 | O00255 | 1/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29742946 | 1.00 | PLAU (0.53) | PLAUHSD17B1HSD17B2ESR1ESR2 | |
| SCHEMBL11963906 | 0.85 | CTDSP1 (0.53) | PLAUHSD17B1HSD17B2ESR1ESR2 | |
| SCHEMBL9098185 | 0.81 | PLAU (0.53) | PLAUHSD17B1HSD17B2ESR1ESR2 | |
| SCHEMBL29592963 | 0.78 | TP53 (0.41) | CYP1A2TRPA1KDM4ETP53TDP1 | |
| SCHEMBL12986970 | 0.78 | TP53 (0.41) | CYP1A2TRPA1KDM4ETP53TDP1 | |
| SCHEMBL16289907 | 0.78 | TP53 (0.41) | CYP1A2TRPA1TP53TDP1MEN1 | |
| SCHEMBL11963905 | 0.78 | NQO2 (0.55) | PLAUHSD17B1HSD17B2CYP1A2KDM4E | |
| 1-Naphthol SCHEMBL8355899 | 0.78 | CYP1A2 (0.61) | PLAUHSD17B1HSD17B2ESR1ESR2 | |
| SCHEMBL17988350 | 0.78 | KDM4E (0.59) | PLAUHSD17B1HSD17B2ESR1ESR2 | |
| SCHEMBL12023085 | 0.78 | MEN1 (0.50) | HSD17B1HSD17B2ESR1ESR2CYP1A2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 448 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-101923288-B | Chemically amplified positive photoresist composition and pattern forming process | SHINETSU CHEMICAL CO | 2013-06-26 | — | — | CN | claimed |
| US-8361693-B2 | Chemically amplified positive photoresist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-29 | — | — | US | claimed |
| EP-2264525-B1 | Chemically amplified positive photoresist composition and pattern forming process | SHINETSU CHEMICAL CO (JP) | 2012-09-05 | — | — | EP | claimed |
| EP-2264525-A2 | Chemically amplified positive photoresist composition and pattern forming process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-12-22 | — | — | EP | claimed |
| CN-101923288-A | Chemically amplified positive photoresist composition and pattern forming process | SHINETSU CHEMICAL CO | 2010-12-22 | — | — | CN | claimed |
| US-20100316955-A1 | CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-12-16 | — | — | US | claimed |
| US-20260147275-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-05-28 | — | — | US | disclosed |
| EP-4749365-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-05-27 | — | — | EP | disclosed |
| EP-4749364-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-05-27 | — | — | EP | disclosed |
| CN-122072437-A | Chemically amplified negative resist composition and resist pattern forming method | 信越化学工业株式会社 | 2026-05-22 | — | — | CN | disclosed |
| CN-122071451-A | Onium salt, chemically amplified positive resist composition, and resist pattern forming method | 信越化学工业株式会社 | 2026-05-22 | — | — | CN | disclosed |
| US-20260138945-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-05-21 | — | — | US | disclosed |
| EP-4492143-B1 | ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2026-05-13 | — | — | EP | disclosed |
| US-20090087786-A1 | PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090087786-A1 | PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-04-02 | — | — | US | disclosed |
| US-7510820-B2 | Resist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-03-31 | — | — | US | disclosed |
| US-7510820-B2 | Resist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-03-31 | — | — | US | disclosed |
| US-20070122740-A1 | Resist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20070122740-A1 | Resist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20030065117-A1 | Modified silicone compound, process of producing the same, and cured object obtained therefrom | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) | 2003-04-03 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260147275-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | GFRA1, RER1, SCN1B | PLAU 4487/4885HSD17B1 2971/4885HSD17B2 2937/4885 |
| US-20260138945-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | ALK, ETV6, ETV1 | PLAU 3476/4885HSD17B1 2550/4885HSD17B2 2804/4885 |
| US-20030065117-A1 | Modified silicone compound, process of producing the same, and cured object obtained therefrom | ORMDL3, SGMS1, HEATR1 | PLAU 4219/4885HSD17B1 1368/4885HSD17B2 1613/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.