SCHEMBL472325

SCHEMBL472325

C=Cc1ccc2c(O)cccc2c1

nearest known ligand 0.53

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
PLAU P00749 1/20 0.53
HSD17B1 P14061 10/20 0.50
HSD17B2 P37059 10/20 0.50
ESR1 P03372 2/20 0.50
ESR2 Q92731 2/20 0.50
CYP1A2 P05177 1/20 0.48
TRPA1 O75762 1/20 0.42
GRIN2D O15399 1/20 0.41
GRIN2A Q12879 1/20 0.41
GRIN2B Q13224 1/20 0.41
GRIN2C Q14957 1/20 0.41
KDM4E B2RXH2 1/20 0.40
MAPKAPK2 P49137 1/20 0.40
CTDSP1 Q9GZU7 1/20 0.40
NQO2 P16083 1/20 0.39
TP53 P04637 1/20 0.39
TDP1 Q9NUW8 1/20 0.39
MEN1 O00255 1/20 0.39
KMT2A Q03164 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29742946 1.00 PLAU (0.53) PLAUHSD17B1HSD17B2ESR1ESR2
SCHEMBL11963906 0.85 CTDSP1 (0.53) PLAUHSD17B1HSD17B2ESR1ESR2
SCHEMBL9098185 0.81 PLAU (0.53) PLAUHSD17B1HSD17B2ESR1ESR2
SCHEMBL29592963 0.78 TP53 (0.41) CYP1A2TRPA1KDM4ETP53TDP1
SCHEMBL12986970 0.78 TP53 (0.41) CYP1A2TRPA1KDM4ETP53TDP1
SCHEMBL16289907 0.78 TP53 (0.41) CYP1A2TRPA1TP53TDP1MEN1
SCHEMBL11963905 0.78 NQO2 (0.55) PLAUHSD17B1HSD17B2CYP1A2KDM4E
1-Naphthol SCHEMBL8355899 0.78 CYP1A2 (0.61) PLAUHSD17B1HSD17B2ESR1ESR2
SCHEMBL17988350 0.78 KDM4E (0.59) PLAUHSD17B1HSD17B2ESR1ESR2
SCHEMBL12023085 0.78 MEN1 (0.50) HSD17B1HSD17B2ESR1ESR2CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 448 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101923288-B Chemically amplified positive photoresist composition and pattern forming process SHINETSU CHEMICAL CO 2013-06-26 CN claimed
US-8361693-B2 Chemically amplified positive photoresist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-29 US claimed
EP-2264525-B1 Chemically amplified positive photoresist composition and pattern forming process SHINETSU CHEMICAL CO (JP) 2012-09-05 EP claimed
EP-2264525-A2 Chemically amplified positive photoresist composition and pattern forming process Shin-Etsu Chemical Co., Ltd. (JP) 2010-12-22 EP claimed
CN-101923288-A Chemically amplified positive photoresist composition and pattern forming process SHINETSU CHEMICAL CO 2010-12-22 CN claimed
US-20100316955-A1 CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-16 US claimed
US-20260147275-A1 ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-05-28 US disclosed
EP-4749365-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-05-27 EP disclosed
EP-4749364-A1 ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-05-27 EP disclosed
CN-122072437-A Chemically amplified negative resist composition and resist pattern forming method 信越化学工业株式会社 2026-05-22 CN disclosed
CN-122071451-A Onium salt, chemically amplified positive resist composition, and resist pattern forming method 信越化学工业株式会社 2026-05-22 CN disclosed
US-20260138945-A1 SULFONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-05-21 US disclosed
EP-4492143-B1 ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2026-05-13 EP disclosed
US-20090087786-A1 PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-02 US disclosed
US-20090087786-A1 PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-02 US disclosed
US-7510820-B2 Resist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-31 US disclosed
US-7510820-B2 Resist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-31 US disclosed
US-20070122740-A1 Resist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed
US-20070122740-A1 Resist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed
US-20030065117-A1 Modified silicone compound, process of producing the same, and cured object obtained therefrom NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2003-04-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260147275-A1 ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS GFRA1, RER1, SCN1B PLAU 4487/4885HSD17B1 2971/4885HSD17B2 2937/4885
US-20260138945-A1 SULFONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS ALK, ETV6, ETV1 PLAU 3476/4885HSD17B1 2550/4885HSD17B2 2804/4885
US-20030065117-A1 Modified silicone compound, process of producing the same, and cured object obtained therefrom ORMDL3, SGMS1, HEATR1 PLAU 4219/4885HSD17B1 1368/4885HSD17B2 1613/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.