Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 9/20 | 0.56 |
| ▸ | L3MBTL1 | Q9Y468 | 3/20 | 0.56 |
| ▸ | SMN1; SMN2 | Q16637 | 4/20 | 0.54 |
| ▸ | MEN1 | O00255 | 2/20 | 0.54 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.54 |
| ▸ | PPARG | P37231 | 1/20 | 0.51 |
| ▸ | PPARA | Q07869 | 1/20 | 0.51 |
| ▸ | HPGD | P15428 | 3/20 | 0.49 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.49 |
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.49 |
| ▸ | ALOX15 | P16050 | 2/20 | 0.49 |
| ▸ | SLC16A3 | O15427 | 1/20 | 0.49 |
| ▸ | SLC16A1 | P53985 | 1/20 | 0.49 |
| ▸ | MAPT | P10636 | 9/20 | 0.48 |
| ▸ | HTT | P42858 | 4/20 | 0.48 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.48 |
| ▸ | GAA | P10253 | 1/20 | 0.48 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.47 |
| ▸ | GFER | P55789 | 1/20 | 0.47 |
| ▸ | LMNA | P02545 | 4/20 | 0.45 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL265494 | 0.87 | SMN1; SMN2 (0.70) | ALDH1A1L3MBTL1SMN1; SMN2MEN1KMT2A | |
| SCHEMBL4300365 | 0.86 | L3MBTL1 (0.52) | ALDH1A1L3MBTL1SMN1; SMN2MEN1KMT2A | |
| SCHEMBL9312635 | 0.85 | MEN1 (0.54) | ALDH1A1L3MBTL1SMN1; SMN2MEN1KMT2A | |
| SCHEMBL9190569 | 0.84 | L3MBTL1 (0.51) | ALDH1A1L3MBTL1SMN1; SMN2MEN1KMT2A | |
| SCHEMBL10597713 | 0.84 | LMNA (0.56) | ALDH1A1L3MBTL1SMN1; SMN2MEN1KMT2A | |
| SCHEMBL10473340 | 0.83 | ALDH1A1 (0.55) | ALDH1A1L3MBTL1SMN1; SMN2MEN1KMT2A | |
| SCHEMBL17716562 | 0.83 | LMNA (0.62) | ALDH1A1L3MBTL1SMN1; SMN2MEN1KMT2A | |
| SCHEMBL10949296 | 0.82 | SLC16A3 (0.57) | ALDH1A1MEN1KMT2APPARGPPARA | |
| SCHEMBL27908567 | 0.81 | LMNA (0.59) | ALDH1A1L3MBTL1MEN1KMT2APPARG | |
| SCHEMBL11637471 | 0.81 | L3MBTL1 (0.46) | ALDH1A1L3MBTL1SMN1; SMN2MEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 115 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2202577-B1 | Chemically amplified positive resist composition and resist patterning process | SHINETSU CHEMICAL CO (JP) | 2014-08-27 | — | — | EP | claimed |
| EP-2492746-B1 | Chemically amplified negative resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2019-11-20 | — | — | EP | disclosed |
| EP-2492747-B1 | Chemically amplified negative resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2018-11-07 | — | — | EP | disclosed |
| EP-2270596-B1 | Positive resist compostion and pattern forming process | SHINETSU CHEMICAL CO (JP) | 2018-07-25 | — | — | EP | disclosed |
| US-RE46765-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| US-RE46736-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| EP-2360527-B1 | Patterning process using EB or EUV lithography | SHINETSU CHEMICAL CO (JP) | 2017-08-23 | — | — | EP | disclosed |
| EP-2360525-B1 | Chemically amplified positive resist composition and pattern forming process | SHINETSU CHEMICAL CO (JP) | 2017-08-23 | — | — | EP | disclosed |
| EP-2360526-B1 | Chemically amplified negative resist composition for E beam or EUV lithography and patterning process | SHINETSU CHEMICAL CO (JP) | 2017-08-16 | — | — | EP | disclosed |
| EP-2256552-B1 | Negative resist composition and patterning process using the same | SHINETSU CHEMICAL CO (JP) | 2017-07-12 | — | — | EP | disclosed |
| EP-2253996-A1 | Negative resist composition, patterning process, and testing process and preparation process of negative resist composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-11-24 | — | — | EP | disclosed |
| US-20100291484-A1 | Negative resist composition, patterning process, and testing process and preparation process of negative resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-11-18 | — | — | US | disclosed |
| EP-2244124-A2 | Patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-10-27 | — | — | EP | disclosed |
| EP-2244125-A2 | Resist composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-10-27 | — | — | EP | disclosed |
| EP-2244126-A2 | Patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-10-27 | — | — | EP | disclosed |
| US-20100167207-A1 | Chemically amplified positive resist composition and resist patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-01 | — | — | US | disclosed |
| EP-2202577-A1 | Chemically amplified positive resist composition and resist patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-06-30 | — | — | EP | disclosed |
| EP-2146245-A2 | Resist composition and patterning process | Shinetsu Chemical Co., Ltd. (JP) | 2010-01-20 | — | — | EP | disclosed |
| US-20100009299-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-01-14 | — | — | US | disclosed |
| CN-101625524-A | Photoresist composition and pattern forming method | SHINETSU CHEMICAL CO | 2010-01-13 | — | — | CN | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100009299-A1 | Resist composition and patterning process | ARF4, FGFR2, ARF5 | ALDH1A1 2706/4885L3MBTL1 2561/4885SMN1; SMN2 4381/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.