SCHEMBL47310

SCHEMBL47310

C=C(C)C(=O)OC(CC)C(F)(F)C(=O)OCc1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.44
KMT2A Q03164 3/20 0.41
MEN1 O00255 2/20 0.41
PTPN1 P18031 5/20 0.39
PTPRC P08575 2/20 0.39
CTRB1 P17538 1/20 0.39
SYK P43405 1/20 0.37
MAPK1 P28482 2/20 0.37
L3MBTL1 Q9Y468 2/20 0.37
TDP1 Q9NUW8 2/20 0.37
SLC6A2 P23975 1/20 0.37
SLC6A3 Q01959 1/20 0.37
SLC15A1 P46059 1/20 0.37
MAOB P27338 1/20 0.36
CYP3A4 P08684 1/20 0.36
TSHR P16473 1/20 0.36
LMNA P02545 2/20 0.35
SMN1; SMN2 Q16637 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12184225 0.89 MAOB (0.43) KMT2AMEN1PTPN1PTPRCMAOB
SCHEMBL13559131 0.87 ALDH1A1 (0.53) ALDH1A1KMT2AMEN1PTPN1PTPRC
SCHEMBL10062523 0.84 ELANE (0.42) CTRB1L3MBTL1TDP1
SCHEMBL20924713 0.81 ALDH1A1 (0.41) ALDH1A1KMT2ACTRB1TDP1SMN1; SMN2
SCHEMBL20924759 0.81 ALDH1A1 (0.43) ALDH1A1KMT2AMEN1PTPN1PTPRC
SCHEMBL47314 0.81 THRB (0.38) ALDH1A1TSHRLMNA
SCHEMBL22662346 0.81 TSHR (0.30) TSHR
SCHEMBL12186473 0.79 HTT (0.36) TSHR
SCHEMBL1143936 0.78 TSHR (0.33) ALDH1A1TSHR
SCHEMBL12439401 0.78 TSHR (0.33) TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2479614-B1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR CORP (JP) 2019-07-24 EP disclosed
EP-2781959-B1 Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound JSR CORP (JP) 2019-04-24 EP disclosed
EP-2781959-B1 Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound JSR CORP (JP) 2019-04-24 EP disclosed
US-9513548-B2 Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound JSR CORPORATION (JP) 2016-12-06 US disclosed
US-9513548-B2 Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound JSR CORPORATION (JP) 2016-12-06 US disclosed
US-9513548-B2 Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound JSR CORPORATION (JP) 2016-12-06 US disclosed
US-20160179003-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR CORPORATION (JP) 2016-06-23 US disclosed
US-20160179003-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR CORPORATION (JP) 2016-06-23 US disclosed
US-20160179003-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR CORPORATION (JP) 2016-06-23 US disclosed
CN-102498439-B Radiation-sensitive resin composition, method for forming resist pattern, polymer, and polymerizable compound JSR CORP 2015-03-11 CN disclosed
US-20120237875-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR CORPORATION (JP) 2012-09-20 US disclosed
US-20120237875-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR CORPORATION (JP) 2012-09-20 US disclosed
US-20120237875-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR CORPORATION (JP) 2012-09-20 US disclosed
EP-2479614-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR Corporation (JP) 2012-07-25 EP disclosed
EP-2479614-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR Corporation (JP) 2012-07-25 EP disclosed
US-20120082934-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND JSR CORPORATION (JP) 2012-04-05 US disclosed
US-20120082934-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND JSR CORPORATION (JP) 2012-04-05 US disclosed
WO-2012002470-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND JSR株式会社 (JP) 2012-01-05 WO disclosed
WO-2011125684-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER AND COMPOUND JSR株式会社 (JP) 2011-10-13 WO disclosed
WO-2011034176-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR株式会社 (JP) 2011-03-24 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120082934-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND RER1, RFT1, RAD51 ALDH1A1 1635/4885KMT2A 2095/4885MEN1 1547/4885
US-20120237875-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND RER1, RDX, PRXL2A ALDH1A1 1383/4885KMT2A 1173/4885MEN1 4432/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.