Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | EPHX2 | P34913 | 10/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.32 |
| ▸ | MEN1 | O00255 | 1/20 | 0.31 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
| ▸ | CNR2 | P34972 | 1/20 | 0.31 |
| ▸ | SGPL1 | O95470 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19753662 | 0.92 | MEN1 (0.33) | EPHX2ALDH1A1KMT2AMEN1L3MBTL1 | |
| SCHEMBL119887 | 0.87 | KMT2A (0.34) | EPHX2ALDH1A1KMT2AMEN1L3MBTL1 | |
| SCHEMBL15096009 | 0.85 | EPHX2 (0.33) | EPHX2ALDH1A1 | |
| SCHEMBL2740743 | 0.81 | TSHR (0.38) | EPHX2ALDH1A1CNR2 | |
| SCHEMBL18802878 | 0.80 | MEN1 (0.33) | EPHX2ALDH1A1KMT2AMEN1L3MBTL1 | |
| SCHEMBL2740742 | 0.80 | EPHX2 (0.36) | EPHX2ALDH1A1KMT2AMEN1 | |
| SCHEMBL47390 | 0.79 | KMT2A (0.35) | EPHX2ALDH1A1KMT2AMEN1L3MBTL1 | |
| SCHEMBL19565066 | 0.78 | EPHX2 (0.38) | EPHX2CNR2 | |
| SCHEMBL824183 | 0.78 | ALDH1A1 (0.36) | EPHX2ALDH1A1KMT2AMEN1L3MBTL1 | |
| SCHEMBL2740754 | 0.78 | KMT2A (0.34) | EPHX2ALDH1A1KMT2AMEN1L3MBTL1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 402 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-01-16 | — | — | US | disclosed |
| US-11835857-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11829068-B2 | Resist composition, method of forming resist pattern, compound, and resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-11822240-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11780946-B2 | Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-10 | — | — | US | disclosed |
| US-11762288-B2 | Resist composition, method of forming resist pattern, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11754922-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-12 | — | — | US | disclosed |
| US-11754926-B2 | Method of forming resist pattern, resist composition and method of producing the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-12 | — | — | US | disclosed |
| US-11747726-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-05 | — | — | US | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-7351515-B2 | Positive resist composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2008-04-01 | — | — | US | disclosed |
| US-7341817-B2 | Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2008-03-11 | — | — | US | disclosed |
| US-7326516-B2 | Resist composition for immersion exposure and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2008-02-05 | — | — | US | disclosed |
| US-7323286-B2 | Photosensitive composition, compound used in the same, and patterning method using the same | FUJIFILM CORPORATION (JP) | 2008-01-29 | — | — | US | disclosed |
| US-20070231708-A1 | Polymer Compound, Acid Generator, Positive Resist Composition, and Method for Formation of Resist Patterns | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-7273690-B2 | Positive resist composition for immersion exposure and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2007-09-25 | — | — | US | disclosed |
| US-7202014-B2 | Stimulus-sensitive composition, compound and pattern formation method using the stimulation-sensitive composition | FUJIFILM CORPORATION (JP) | 2007-04-10 | — | — | US | disclosed |
| US-20070065753-A1 | Positive resist composition for immersion exposure and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-22 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-20070042290-A1 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11709425-B2 | Resist composition and method of forming resist pattern | RER1, RRS1, RXFP4 | EPHX2 3229/4885ALDH1A1 3475/4885KMT2A 2140/4885 |
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | MRPS23, MRPS22, SLC11A2 | EPHX2 3289/4885ALDH1A1 2173/4885KMT2A 2337/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.