SCHEMBL824183

SCHEMBL824183

CCCCC(C)(OC(=O)C(C)CC)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.39

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.36
EPHX2 P34913 11/20 0.34
KMT2A Q03164 3/20 0.33
MEN1 O00255 2/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
CNR1 P21554 1/20 0.32
CNR2 P34972 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL825465 0.86 ALDH1A1 (0.37) ALDH1A1EPHX2KMT2AMEN1L3MBTL1
SCHEMBL111708 0.80 ALDH1A1 (0.38) ALDH1A1EPHX2KMT2AMEN1L3MBTL1
SCHEMBL13925833 0.80 KMT2A (0.36) ALDH1A1EPHX2KMT2AMEN1L3MBTL1
SCHEMBL47388 0.78 EPHX2 (0.35) ALDH1A1EPHX2KMT2AMEN1L3MBTL1
SCHEMBL2740743 0.78 TSHR (0.38) ALDH1A1EPHX2CNR1CNR2
SCHEMBL9608691 0.77 ALDH1A1 (0.36) ALDH1A1KMT2AMEN1L3MBTL1SMN1; SMN2
SCHEMBL2740742 0.77 EPHX2 (0.36) ALDH1A1EPHX2KMT2AMEN1
SCHEMBL19565066 0.76 EPHX2 (0.38) EPHX2CNR2
SCHEMBL6366757 0.76 ALDH1A1 (0.38) ALDH1A1EPHX2KMT2AMEN1L3MBTL1
SCHEMBL14557132 0.74 HSD11B1 (0.34) ALDH1A1L3MBTL1CNR1CNR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 136 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9040220-B2 Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-05-26 US disclosed
US-9034556-B2 Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-05-19 US disclosed
US-8900788-B2 Resist composition for immersion exposure and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2014-12-02 US disclosed
US-8742038-B2 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-06-03 US disclosed
US-20140127626-A1 RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT WHICH IS USED FOR FORMATION OF GUIDE PATTERN, GUIDE PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN ON LAYER CONTAINING BLOCK COPOLYMER RIKEN (JP) 2014-05-08 US disclosed
US-8642244-B2 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-02-04 US disclosed
US-8574813-B2 Resist composition for immersion exposure and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-11-05 US disclosed
US-8519073-B2 Compound and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-08-27 US disclosed
US-8518629-B2 Resist composition for immersion exposure and method of forming resist pattern using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2013-08-27 US disclosed
US-8501387-B2 2013-08-06 US disclosed
US-20090023097-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed
US-20090004598-A1 Resist Composition And Method For Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-01 US disclosed
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080292988-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2008-11-27 US disclosed
US-20080268376-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-30 US disclosed
US-20080193871-A1 Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-08-14 US disclosed
US-20080090171-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-04-17 US disclosed
US-7338740-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2008-03-04 US disclosed
US-20070231708-A1 Polymer Compound, Acid Generator, Positive Resist Composition, and Method for Formation of Resist Patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2007-10-04 US disclosed
US-7252924-B2 Positive resist composition and method of pattern formation using the same FUJIFILM CORPORATION (JP) 2007-08-07 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation GNG2, ACAD9, SCO2 ALDH1A1 1184/4885EPHX2 176/4885KMT2A 4210/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.