Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CTSD | P07339 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL15969452 | 0.97 | CTSD (0.33) | CTSD | |
| SCHEMBL15387882 | 0.83 | — | — | |
| SCHEMBL2230540 | 0.75 | CTSD (0.43) | CTSD | |
| SCHEMBL809124 | 0.69 | CTSD (0.35) | CTSD | |
| SCHEMBL140407 | 0.69 | CTSD (0.35) | CTSD | |
| SCHEMBL28961651 | 0.67 | CTSD (0.38) | CTSD | |
| Bromide SCHEMBL1539651 | 0.67 | CTSD (0.33) | CTSD | |
| Hydrochloric Acid SCHEMBL3667602 | 0.67 | CTSD (0.33) | CTSD | |
| Hydrochloric Acid SCHEMBL812503 | 0.67 | CTSD (0.33) | CTSD | |
| Hydrochloric Acid SCHEMBL138585 | 0.67 | CTSD (0.33) | CTSD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2008091396-A2 | THERMOELECTRIC NANOWIRE COMPOSITES | ELORET CORPORATION (US) | 2008-07-31 | — | — | WO | claimed |
| US-20080178921-A1 | THERMOELECTRIC NANOWIRE COMPOSITES | ELORET CORPORATION | 2008-07-31 | — | — | US | claimed |
| US-12563983-B2 | Method of forming structures including a vanadium or indium layer | ASM IP HOLDING B.V. (NL) | 2026-02-24 | — | — | US | disclosed |
| US-20250283217-A1 | VAPOR DEPOSITION SOURCE MATERIAL USED IN PRODUCTION OF FILM CONTAINING INDIUM AND ONE OR MORE OF THE OTHER METALS, AND THE METHOD OF PRODUCING FILM CONTAINING INDIUM AND ONE OR MORE OF THE OTHER METALS | KOJUNDO CHEMICAL LABORATORY CO., LTD. (JP) | 2025-09-11 | — | — | US | disclosed |
| US-12410514-B2 | Vapor deposition source material used in production of film containing indium and one or more of the other metals, and the method of producing film containing indium and one or more of the other metals | KOJUNDO CHEMICAL LABORATORY CO., LTD. (JP) | 2025-09-09 | — | — | US | disclosed |
| US-20250157808-A1 | METHODS AND APPARATUS UTILIZING INDIUM-BASED PRECURSORS FOR INTEGRATED CIRCUIT MANUFACTURING | INTEL CORPORATION | 2025-05-15 | — | — | US | disclosed |
| EP-4553577-A2 | METHODS AND APPARATUS UTILIZING INDIUM-BASED PRECURSORS FOR INTEGRATED CIRCUIT MANUFACTURING | INTEL Corporation (US) | 2025-05-14 | — | — | EP | disclosed |
| US-20240003004-A1 | VAPOR DEPOSITION SOURCE MATERIAL USED IN PRODUCTION OF FILM CONTAINING INDIUM AND ONE OR MORE OF THE OTHER METALS, AND THE METHOD OF PRODUCING FILM CONTAINING INDIUM AND ONE OR MORE OF THE OTHER METALS | KOJUNDO CHEMICAL LABORATORY CO., LTD. (JP) | 2024-01-04 | — | — | US | disclosed |
| US-20230078233-A1 | METHOD OF FORMING STRUCTURES INCLUDING A VANADIUM OR INDIUM LAYER | ASM IP HOLDING B.V. (NL) | 2023-03-16 | — | — | US | disclosed |
| US-11521851-B2 | Method of forming structures including a vanadium or indium layer | ASM IP HOLDING B.V. (NL) | 2022-12-06 | — | — | US | disclosed |
| CN-113284789-A | Method of forming a structure comprising a vanadium or indium layer | ASM IP私人控股有限公司 | 2021-08-20 | — | — | CN | disclosed |
| US-20210242011-A1 | METHOD OF FORMING STRUCTURES INCLUDING A VANADIUM OR INDIUM LAYER | ASM IP HOLDING B.V. (NL) | 2021-08-05 | — | — | US | disclosed |
| US-8482104-B2 | Method for growth of indium-containing nitride films | SORAA, INC. (US) | 2013-07-09 | — | — | US | disclosed |
| US-20120199952-A1 | Method for Growth of Indium-Containing Nitride Films | SORAA, INC. (US) | 2012-08-09 | — | — | US | disclosed |
| WO-2008091396-A2 | THERMOELECTRIC NANOWIRE COMPOSITES | ELORET CORPORATION (US) | 2008-07-31 | — | — | WO | disclosed |
| US-20080178921-A1 | THERMOELECTRIC NANOWIRE COMPOSITES | ELORET CORPORATION | 2008-07-31 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12563983-B2 | Method of forming structures including a vanadium or indium layer | HAO2, TDO2, DUOX2 | CTSD 4315/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.