SCHEMBL47450

SCHEMBL47450

CCC(C)(C)C(=O)OC1C(=O)OCC1C

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FKBP1A P62942 2/20 0.35
HMGCR P04035 4/20 0.32
CYP3A4 P08684 3/20 0.32
USP2 O75604 2/20 0.32
ALDH1A1 P00352 2/20 0.32
TSHR P16473 2/20 0.32
KDM4E B2RXH2 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
NR1I2 O75469 1/20 0.32
ABCB11 O95342 1/20 0.32
NR3C1 P04150 1/20 0.32
PGR P06401 1/20 0.32
ABCB1 P08183 1/20 0.32
ADORA3 P0DMS8 1/20 0.32
CYP2C8 P10632 1/20 0.32
CHRM1 P11229 1/20 0.32
ADRB3 P13945 1/20 0.32
GABRA1 P14867 1/20 0.32
ADRA2B P18089 1/20 0.32
ADRA2C P18825 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2607855 0.86 FKBP1A (0.31) FKBP1A
SCHEMBL19413943 0.85
SCHEMBL11941673 0.85 FKBP1A (0.37) FKBP1AHMGCRCYP3A4USP2ALDH1A1
SCHEMBL2625680 0.84 FKBP1A (0.30) FKBP1A
SCHEMBL16449151 0.84 SMN1; SMN2 (0.32) SMN1; SMN2
SCHEMBL10259018 0.84 FKBP1A (0.34) FKBP1AHMGCRCYP3A4USP2ALDH1A1
SCHEMBL786084 0.82 FKBP1A (0.33) FKBP1AHMGCR
SCHEMBL12753404 0.82 CYP3A4 (0.36) FKBP1AHMGCRCYP3A4USP2ALDH1A1
SCHEMBL4569602 0.81 CYP2D6 (0.31)
SCHEMBL12628434 0.81 HMGCR (0.33) FKBP1AHMGCRCYP3A4USP2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 344 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11803122-B2 Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-31 US disclosed
US-20230273521-A1 CHEMICALLY AMPLIFIED PHOTOSENTIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-08-31 US disclosed
US-20230229084-A1 CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-20 US disclosed
US-9977328-B2 Chemically amplified positive-type photosensitive resin composition for thick film TOKYO OHKA KOGYO CO., LTD. (JP) 2018-05-22 US disclosed
US-20170315444-A1 CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2017-11-02 US disclosed
US-9778568-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-03 US disclosed
US-9778568-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-03 US disclosed
US-9671693-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-06-06 US disclosed
US-9618842-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-9618843-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-7488568-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-10 US disclosed
US-20090035698-A1 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-05 US disclosed
US-20090023097-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed
US-20090023095-A1 NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080292988-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2008-11-27 US disclosed
US-20080268376-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-30 US disclosed
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-09 US disclosed
US-20080193871-A1 Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-08-14 US disclosed
US-20080090171-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-04-17 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation GNG2, ACAD9, SCO2 FKBP1A 4712/4885HMGCR 3786/4885CYP3A4 2148/4885
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR RER1, ACAD9, RRS1 FKBP1A 3824/4885HMGCR 1468/4885CYP3A4 1596/4885
US-20090023095-A1 NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN C1R, CYP1B1, C1S FKBP1A 3379/4885HMGCR 1420/4885CYP3A4 523/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.