SCHEMBL47456

SCHEMBL47456

CCC(C)(C)C(=O)OC1C(=O)OCC1(C)C

nearest known ligand 0.61

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
CTSV O60911 1/20 0.39
CTSL P07711 1/20 0.39
CTSS P25774 1/20 0.39
CTSK P43235 1/20 0.39
AR P10275 3/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17245080 1.00 CTSV (0.39) CTSVCTSLCTSSCTSKAR
SCHEMBL13002950 0.87 CTSV (0.35) CTSVCTSLCTSSCTSKAR
SCHEMBL18845071 0.86 CTSV (0.37) CTSVCTSLCTSSCTSKAR
SCHEMBL2754867 0.84 AR (0.37) CTSVCTSLCTSSCTSKAR
SCHEMBL13002964 0.83 CTSV (0.33) CTSVCTSLCTSSCTSK
SCHEMBL19751264 0.82 AR (0.36) CTSVCTSLCTSSCTSKAR
SCHEMBL686257 0.82 AR (0.41) CTSVCTSLCTSSCTSKAR
SCHEMBL9045248 0.80 AR (0.41) CTSVCTSLCTSSCTSKAR
SCHEMBL12370644 0.80 CTSV (0.34) CTSVCTSLCTSSCTSK
SCHEMBL18922934 0.79 CTSV (0.35) CTSVCTSLCTSSCTSKAR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 954 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-20240027908-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-01-25 US disclosed
US-20230400767-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-12-14 US disclosed
US-20230400768-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN JSR CORPORATION (JP) 2023-12-14 US disclosed
US-20230384674-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-11-30 US disclosed
US-20230367212-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-11-16 US disclosed
US-20230350290-A1 PATTERN FORMING METHOD, KIT, AND RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2023-11-02 US disclosed
US-11803122-B2 Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-31 US disclosed
US-11747727-B2 Chemical liquid, chemical liquid storage body, pattern forming method, and kit FUJIFILM CORPORATION (JP) 2023-09-05 US disclosed
US-20230273521-A1 CHEMICALLY AMPLIFIED PHOTOSENTIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-08-31 US disclosed
US-7192681-B2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 US disclosed
US-7192681-B2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 US disclosed
US-20070059639-A1 Positive resist composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-15 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-20070042291-A1 Positive resist composition and a pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-20070042290-A1 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-20070026343-A1 Chemical amplification-type resist composition and production process thereof FUJI PHOTO FILM CO., LTD. 2007-02-01 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230400767-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND RER1, RAD51, RFT1 CTSV 4414/4885CTSL 4625/4885CTSS 4133/4885
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, COL1A1, RAD51 CTSV 1327/4885CTSL 1111/4885CTSS 1302/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.