SCHEMBL47521

SCHEMBL47521

CC1C2CC(COCCO)C(C2)C1C

nearest known ligand 0.31

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.31
TSHR P16473 1/20 0.31
MAPK1 P28482 1/20 0.31
MEN1 O00255 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL47479 0.85
SCHEMBL47572 0.84 TSHR (0.34) ALDH1A1TSHRMAPK1MEN1KMT2A
SCHEMBL13714929 0.84
SCHEMBL47527 0.75
SCHEMBL12271253 0.75
SCHEMBL12789559 0.75
SCHEMBL47544 0.74 GBA1 (0.30)
SCHEMBL13714724 0.74 GBA1 (0.30)
SCHEMBL10026297 0.74 TSHR (0.39) ALDH1A1TSHRMAPK1
SCHEMBL47483 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8859187-B2 Method of forming resist pattern and negative resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2014-10-14 US disclosed
US-8771921-B2 Negative resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-07-08 US disclosed
US-8735052-B2 Surface modifying material, method of forming resist pattern, and method of forming pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2014-05-27 US disclosed
US-8541157-B2 Resist composition, method of forming resist pattern, compound and acid generator including the same TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-24 US disclosed
US-8530598-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-10 US disclosed
US-8354218-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-01-15 US disclosed
US-8263322-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-09-11 US disclosed
US-8247161-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-21 US disclosed
US-8236483-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-07 US disclosed
US-20120164581-A1 NEGATIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND SHO ABE (JP) 2012-06-28 US disclosed
US-8039199-B2 Negative resist composition for immersion exposure and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-18 US disclosed
US-20110039207-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-02-17 US disclosed
US-20100167217-A1 METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-07-01 US disclosed
US-20100143844-A1 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2010-06-10 US disclosed
US-20100081088-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR INCLUDING THE SAME TOKYO OHKA KOGYO CO., LTD. (JP) 2010-04-01 US disclosed
US-20100035192-A1 METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-02-11 US disclosed
US-20090274976-A1 Negative resist composition for immersion exposure and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2009-11-05 US disclosed
US-7598017-B2 Negative resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2009-10-06 US disclosed
US-20090191478-A1 METHOD OF FORMING RESIST PATTERN AND NEGATIVE RESIST COMPOSITION TOKYO OHKA KOGYO CO., LTD (JP) 2009-07-30 US disclosed
US-20090111054-A1 NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-30 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100081088-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR INCLUDING THE SAME ASIC1, RER1, GRIN1 ALDH1A1 717/4885TSHR 3650/4885MAPK1 2691/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.