SCHEMBL47540

SCHEMBL47540

CCC(C)(C)C(=O)OC12CC3CC(CC(O)(C3)C1)C2

nearest known ligand 0.38

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 3/20 0.38
MDH1 P40925 1/20 0.36
MDH2 P40926 1/20 0.36
CYP17A1 P05093 1/20 0.35
CYP19A1 P11511 1/20 0.35
DPP8 Q6V1X1 3/20 0.35
DPP9 Q86TI2 3/20 0.35
PKM P14618 1/20 0.34
ALDH1A1 P00352 1/20 0.34
DPP4 P27487 3/20 0.34
CNR1 P21554 1/20 0.33
CNR2 P34972 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13088075 1.00 HSD11B1 (0.38) HSD11B1MDH1MDH2CYP17A1CYP19A1
SCHEMBL12603701 0.89 HSD11B1 (0.36) HSD11B1MDH1MDH2CYP17A1CYP19A1
SCHEMBL11966898 0.88 HSD11B1 (0.38) HSD11B1MDH1MDH2CYP17A1CYP19A1
SCHEMBL107655 0.88 CYP17A1 (0.32) CYP17A1CYP19A1DPP4
SCHEMBL11985998 0.88 MDH1 (0.35) HSD11B1MDH1MDH2CYP17A1CYP19A1
SCHEMBL13847295 0.87 MDH1 (0.42) HSD11B1MDH1MDH2CYP17A1CYP19A1
SCHEMBL25739907 0.87 HSD11B1 (0.37) HSD11B1MDH1MDH2CYP17A1CYP19A1
SCHEMBL2607846 0.87 ALDH1A1 (0.35) HSD11B1MDH1MDH2DPP8DPP9
SCHEMBL14556805 0.86 HSD11B1 (0.36) HSD11B1MDH1MDH2CYP17A1CYP19A1
SCHEMBL18400995 0.86 HSD11B1 (0.36) HSD11B1MDH1MDH2CYP17A1CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2671 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240242967-A1 Polymer For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-18 US disclosed
US-20240241441-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-07-18 US disclosed
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-20240219830-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-07-04 US disclosed
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-06-27 US disclosed
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-06-27 US disclosed
US-11914300-B2 Manufacturing method of semiconductor chip, and kit FUJIFILM CORPORATION (JP) 2024-02-27 US disclosed
US-20240019782-A1 Composition For Forming Metal Oxide Film, Patterning Process, And Method For Forming Metal Oxide Film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-18 US disclosed
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 US disclosed
US-20230400770-A1 Resist Underlayer Film Material, Patterning Process, And Method For Forming Resist Underlayer Film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-14 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179581-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-02-20 US disclosed
US-20070031755-A1 Material for forming resist-protecting film for immersion exposure process, resist-protecting film made of such material, and method for forming resist pattern using such resist-protec- ting film TOKO OHKA KOGYO CO., LTD. (JP) 2007-02-08 US disclosed
US-20070031757-A1 Positive photosensitive composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-02-08 US disclosed
US-20070027336-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-02-01 US disclosed
US-7169541-B2 Compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-30 US disclosed
US-20070003867-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-04 US disclosed
US-20070003871-A1 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. 2007-01-04 US disclosed
US-7157207-B2 Polymer, resist material and patterning processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-02 US disclosed