Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP17A1 | P05093 | 1/20 | 0.36 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.36 |
| ▸ | PKM | P14618 | 1/20 | 0.36 |
| ▸ | MDH1 | P40925 | 1/20 | 0.35 |
| ▸ | MDH2 | P40926 | 1/20 | 0.35 |
| ▸ | HSD11B1 | P28845 | 3/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
| ▸ | DPP4 | P27487 | 3/20 | 0.32 |
| ▸ | DPP8 | Q6V1X1 | 2/20 | 0.31 |
| ▸ | DPP9 | Q86TI2 | 2/20 | 0.31 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10173655 | 0.87 | CYP17A1 (0.38) | CYP17A1CYP19A1PKMMDH1MDH2 | |
| SCHEMBL21392211 | 0.86 | CYP17A1 (0.32) | CYP17A1CYP19A1 | |
| SCHEMBL776275 | 0.84 | CYP17A1 (0.36) | CYP17A1CYP19A1PKMMDH1MDH2 | |
| SCHEMBL776064 | 0.84 | CYP17A1 (0.36) | CYP17A1CYP19A1PKMMDH1MDH2 | |
| SCHEMBL11946063 | 0.82 | CYP17A1 (0.34) | CYP17A1CYP19A1PKMMDH1MDH2 | |
| SCHEMBL776067 | 0.82 | MDH1 (0.36) | CYP17A1CYP19A1PKMMDH1MDH2 | |
| SCHEMBL19819922 | 0.82 | CYP17A1 (0.35) | CYP17A1CYP19A1PKMMDH1MDH2 | |
| SCHEMBL13088075 | 0.82 | HSD11B1 (0.38) | CYP17A1CYP19A1PKMMDH1MDH2 | |
| SCHEMBL11966898 | 0.82 | HSD11B1 (0.38) | CYP17A1CYP19A1PKMMDH1MDH2 | |
| SCHEMBL12131745 | 0.82 | CYP17A1 (0.35) | CYP17A1CYP19A1PKMMDH1MDH2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8349534-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-08 | — | — | US | disclosed |
| US-8338075-B2 | Base component which exhibits increased solubility in an alkali developing solution under the action of acid, an acid generator, and organic solvent having a boiling point of at least 150 degrees C.; hole-like resist pattern can be formed with a high level of resolution and minute dimensions | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-25 | — | — | US | disclosed |
| US-8268529-B2 | Positive resist composition, method of forming resist pattern using the same, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-09-18 | — | — | US | disclosed |
| US-8263322-B2 | Method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-09-11 | — | — | US | disclosed |
| US-8247159-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-21 | — | — | US | disclosed |
| US-8247161-B2 | Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-21 | — | — | US | disclosed |
| US-8178284-B2 | Method of forming pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-05-15 | — | — | US | disclosed |
| US-8142979-B2 | Resist composition for immersion exposure and method of forming resist pattern using the same | Tokyo Ohka Tokyo Co., Ltd. (JP) | 2012-03-27 | — | — | US | disclosed |
| US-8105747-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-7989138-B2 | Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-08-02 | — | — | US | disclosed |
| US-20100167217-A1 | METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-07-01 | — | — | US | disclosed |
| US-20100143844-A1 | Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
| US-20100075249-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-03-25 | — | — | US | disclosed |
| US-20100047724-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-02-25 | — | — | US | disclosed |
| US-20100040970-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20090311627-A1 | Resist composition for immersion exposure and method of forming resist pattern using the same | TOKYO OHKA KOGYO CO., LTD. | 2009-12-17 | — | — | US | disclosed |
| US-20090280438-A1 | METHOD OF FORMING PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-11-12 | — | — | US | disclosed |
| US-20090142699-A1 | FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-06-04 | — | — | US | disclosed |
| US-20090130590-A1 | PHOTORESIST COMPOSITIONS AND PROCESS FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER PHOTORESIST SYSTEMS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-05-21 | — | — | US | disclosed |
| US-20090023097-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-22 | — | — | US | disclosed |