SCHEMBL10173655

SCHEMBL10173655

CC(C)(C)C(=O)OC12CC3CC(CC(O)(C3)C1)C2

nearest known ligand 0.38

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 1/20 0.38
CYP19A1 P11511 1/20 0.38
PKM P14618 1/20 0.38
HSD11B1 P28845 4/20 0.36
CLK1 P49759 1/20 0.36
CLK2 P49760 1/20 0.36
DYRK1A Q13627 1/20 0.36
CLK4 Q9HAZ1 1/20 0.36
DYRK1B Q9Y463 1/20 0.36
MDH1 P40925 1/20 0.36
MDH2 P40926 1/20 0.36
DPP8 Q6V1X1 3/20 0.34
DPP9 Q86TI2 3/20 0.34
ALDH1A1 P00352 1/20 0.34
DPP4 P27487 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4759735 0.87 CYP17A1 (0.36) CYP17A1CYP19A1PKMHSD11B1MDH1
SCHEMBL776275 0.87 CYP17A1 (0.36) CYP17A1CYP19A1PKMHSD11B1MDH1
SCHEMBL776064 0.87 CYP17A1 (0.36) CYP17A1CYP19A1PKMHSD11B1MDH1
SCHEMBL14231490 0.85 CYP17A1 (0.33) CYP17A1CYP19A1DPP4
SCHEMBL19819922 0.84 CYP17A1 (0.35) CYP17A1CYP19A1PKMHSD11B1MDH1
SCHEMBL11966898 0.84 HSD11B1 (0.38) CYP17A1CYP19A1PKMHSD11B1MDH1
SCHEMBL12131745 0.84 CYP17A1 (0.35) CYP17A1CYP19A1PKMHSD11B1MDH1
SCHEMBL13088075 0.84 HSD11B1 (0.38) CYP17A1CYP19A1PKMHSD11B1MDH1
SCHEMBL776067 0.84 MDH1 (0.36) CYP17A1CYP19A1PKMHSD11B1MDH1
SCHEMBL47540 0.84 HSD11B1 (0.38) CYP17A1CYP19A1PKMHSD11B1MDH1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 81 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 US disclosed
US-20230099348-A1 PHOTORESIST COMPOSITION COMPRISING AMIDE COMPOUND AND PATTERN FORMATION METHODS USING THE SAME DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2023-03-30 US disclosed
US-20210294214-A1 UNDERLAYER FILM FORMING COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-09-23 US disclosed
US-20190180888-A1 CONDUCTIVE POLYMER COMPOSITION, COATED ARTICLE, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-06-13 US disclosed
US-9996002-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-06-12 US disclosed
US-9983478-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-05-29 US disclosed
US-9971241-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-05-15 US disclosed
US-20180113382-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-04-26 US disclosed
US-9951159-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-04-24 US disclosed
US-20180065924-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-03-08 US disclosed
US-20160004155-A1 PHOTO ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-07 US disclosed
US-9229321-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-20150168828-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-18 US disclosed
US-8956803-B2 Sulfonium salt, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-17 US disclosed
US-8741541-B2 Compound, resin, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-06-03 US disclosed
US-8206891-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-26 US disclosed
US-20100167200-A1 (Meth)acrylate compound, photosensitive polymer, and resist composition including the same CHEIL INDUSTRIES, INC. (KR) 2010-07-01 US disclosed
US-20100151388-A1 (Meth)acrylate compound, photosensitive polymer, and resist composition including the same CHEIL INDUSTRIES, INC. (KR) 2010-06-17 US disclosed
US-20100086873-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-04-08 US disclosed
EP-1939691-A2 Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method FUJIFILM Corporation (JP) 2008-07-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180113382-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RER1, FRG1, C1R CYP17A1 1701/4885CYP19A1 1890/4885PKM 4800/4885
US-20100151388-A1 (Meth)acrylate compound, photosensitive polymer, and resist composition including the same MMAB, TET1, MAT1A CYP17A1 3065/4885CYP19A1 969/4885PKM 1814/4885
US-20100167200-A1 (Meth)acrylate compound, photosensitive polymer, and resist composition including the same MMAB, TET1, MGMT CYP17A1 2739/4885CYP19A1 767/4885PKM 1112/4885
US-20180065924-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1R, RER1, C1S CYP17A1 2353/4885CYP19A1 1763/4885PKM 3345/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.