Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.39 |
| ▸ | GAA | P10253 | 2/20 | 0.39 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.35 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.33 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.33 |
| ▸ | POLB | P06746 | 2/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | NPC1 | O15118 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | HPGD | P15428 | 1/20 | 0.33 |
| ▸ | RAB9A | P51151 | 1/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.33 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.32 |
| ▸ | TAAR1 | Q96RJ0 | 1/20 | 0.32 |
| ▸ | CASP6 | P55212 | 1/20 | 0.32 |
| ▸ | CTDSP1 | Q9GZU7 | 1/20 | 0.32 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.32 |
| ▸ | CA1 | P00915 | 1/20 | 0.32 |
| ▸ | CA2 | P00918 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL20377380 | 0.81 | ALDH1A1 (0.38) | ALDH1A1GAACYP2C19TDP1KDM4E | |
| SCHEMBL29257254 | 0.79 | ALDH1A1 (0.37) | ALDH1A1GAACYP2C19TDP1POLB | |
| SCHEMBL18334623 | 0.79 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL16416686 | 0.78 | ALDH1A1 (0.36) | ALDH1A1GAACYP2C19TDP1KDM4E | |
| SCHEMBL6918643 | 0.77 | ENPP3 (0.41) | ALDH1A1GAACYP2C19TDP1SMN1; SMN2 | |
| SCHEMBL4457037 | 0.77 | ALDH1A1 (0.38) | ALDH1A1GAATDP1KDM4EMEN1 | |
| SCHEMBL6568143 | 0.77 | ALDH1A1 (0.36) | ALDH1A1GAACYP2C19TDP1KDM4E | |
| SCHEMBL5472080 | 0.76 | ALDH1A1 (0.36) | ALDH1A1GAACYP2C19TDP1MEN1 | |
| SCHEMBL24879875 | 0.73 | ALDH1A1 (0.44) | ALDH1A1GAATDP1KDM4EPOLB | |
| SCHEMBL10717453 | 0.72 | ALDH1A1 (0.36) | ALDH1A1GAATDP1KDM4EPOLB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118027277-B | Acrylic ester polymer and preparation method and application thereof | 广东粤港澳大湾区黄埔材料研究院 | 2024-06-11 | — | — | CN | disclosed |
| CN-118027277-A | Acrylic ester polymer and preparation method and application thereof | 广东粤港澳大湾区黄埔材料研究院 | 2024-05-14 | — | — | CN | disclosed |
| CN-110095941-B | Photosensitive resin composition and method for producing semiconductor element | 东丽株式会社 | 2023-02-17 | — | — | CN | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| US-10816898-B2 | — | — | 2020-10-27 | — | — | US | disclosed |
| US-20190056657-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-02-21 | — | — | US | disclosed |
| WO-2018033552-A1 | COMPOSITION FOR BLACK MATRIX AND METHOD FOR PRODUCING BLACK MATRIX USING THE SAME | AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L. (LU) | 2018-02-22 | — | — | WO | disclosed |
| CN-103619892-B | Phenolic resin and underlayer film forming material for lithography | 三菱瓦斯化学株式会社 | 2016-08-24 | — | — | CN | disclosed |
| EP-3025197-A1 | CROSS-LINKABLE FLUORINATED PHOTOPOLYMER | Orthogonal Inc. (US) | 2016-06-01 | — | — | EP | disclosed |
| WO-2015013396-A1 | CROSS-LINKABLE FLUORINATED PHOTOPOLYMER | ORTHOGONAL, INC. (US) | 2015-01-29 | — | — | WO | disclosed |
| CN-102574963-B | Aromatic hydrocarbon resin and underlayer film forming composition for lithography | MITSUBISHI GAS CHEMICAL CO | 2014-11-19 | — | — | CN | disclosed |
| CN-103619892-A | Phenolic resin and underlayer film forming material for lithography | MITSUBISHI GAS CHEMICAL CO | 2014-03-05 | — | — | CN | disclosed |
| US-20080286693-A1 | Sulfonate derivatives and the use thereof as latent acids | MATSUMOTO AKIRA | 2008-11-20 | — | — | US | disclosed |
| US-20040191674-A1 | Chemical amplification resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2004-09-30 | — | — | US | disclosed |
| EP-1320785-A2 | OXIME DERIVATIVES AND THE USE THEREOF AS LATENT ACIDS | Ciba SC Holding AG (CH) | 2003-06-25 | — | — | EP | disclosed |
| WO-2002025376-A2 | OXIME DERIVATIVES AND THE USE THEREOF AS LATENT ACIDS | CIBA SPECIALTY CHEMICALS HOLDING INC. (CH) | 2002-03-28 | — | — | WO | disclosed |
| US-6014422-A | Method for varying x-ray hybrid resist space dimensions | INTERNAITONAL BUSINESS MACHINES CORPORATION (US) | 2000-01-11 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | ALDH1A1 1553/4885GAA 4720/4885CYP2C19 1855/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | ALDH1A1 1540/4885GAA 4768/4885CYP2C19 1810/4885 |
| US-20190056657-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C5, C1R | ALDH1A1 1540/4885GAA 4768/4885CYP2C19 1810/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | ALDH1A1 1540/4885GAA 4768/4885CYP2C19 1810/4885 |
| US-10816898-B2 | — | C5, C9, H1-0 | ALDH1A1 135/4885GAA 4420/4885CYP2C19 1427/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.