Tetramethylammonium Ion

Tetramethylammonium Ion

SCHEMBL4802835

C[N+](C)(C)C.O=S(=O)(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.48

Full drug profile on Sugi Atlas →

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CA2 P00918 11/20 0.48
CA1 P00915 10/20 0.48
MMP1 P03956 6/20 0.48
MMP2 P08253 6/20 0.48
MMP9 P14780 6/20 0.48
MMP8 P22894 6/20 0.48
MMP13 P45452 6/20 0.48
F2 P00734 4/20 0.44
PRSS1 P07477 4/20 0.44
PRSS2 P07478 4/20 0.44
PRSS3 P35030 4/20 0.44
THRB P10828 1/20 0.34
ALDH1A1 P00352 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetramethylammonium Ion SCHEMBL8101338 1.00 CA2 (0.48) CA2CA1MMP1MMP2MMP9
Tetramethylammonium Ion SCHEMBL548456 0.98 CA2 (0.46) CA2CA1MMP1MMP2MMP9
Hydrogen Sulfide SCHEMBL1743653 0.93 CA2 (0.54) CA2CA1MMP1MMP2MMP9
Tetramethylammonium Ion SCHEMBL8104302 0.91 CA2 (0.38) CA2CA1MMP1MMP2MMP9
Hydrogen Sulfide SCHEMBL4241412 0.91 CA2 (0.52) CA2CA1MMP1MMP2MMP9
SCHEMBL24140 0.91 CA2 (0.56) CA2CA1MMP1MMP2MMP9
SCHEMBL615754 0.91 CA2 (0.56) CA2CA1MMP1MMP2MMP9
SCHEMBL3140314 0.91 CA2 (0.56) CA2CA1MMP1MMP2MMP9
SCHEMBL3139152 0.91 CA2 (0.56) CA2CA1MMP1MMP2MMP9
SCHEMBL332726 0.91 CA2 (0.56) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7384730-B2 Top coating composition for photoresist and method of forming photoresist pattern using same SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-06-10 US claimed
US-20060275697-A1 Top coating composition for photoresist and method of forming photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-12-07 US claimed
US-20060111550-A1 Top coating composition for photoresist and method of forming photoresist pattern using same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-05-25 US claimed
US-7384730-B2 Top coating composition for photoresist and method of forming photoresist pattern using same SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-06-10 US disclosed
US-20060275697-A1 Top coating composition for photoresist and method of forming photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-12-07 US disclosed
US-20060111550-A1 Top coating composition for photoresist and method of forming photoresist pattern using same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-05-25 US disclosed
US-6132928-A Coating solution for forming antireflective coating film TOKYO OHKA KOGYO CO., LTD. (JP) 2000-10-17 US disclosed
US-5783362-A Liquid coating composition for use in forming photoresist coating films and a photoresist material using said composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-07-21 US disclosed
US-5631314-A Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition TOKYO OHKA KOGYO CO., LTD. (JP) 1997-05-20 US disclosed
US-4041003-A Process for molding aromatic polycarbonates having perfluoroalkanesulphonic acid derivatives as mold release agents BAYER AKTIENGESELLSCHAFT (DT) 1977-08-09 US disclosed